IRFE9110
1/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
MECHANICAL DATA
Dimensions in mm (inches)
1.39 (0.055)
1.15 (0.045)
0.76 (0.030)
0.51 (0.020)
1.39 (0.055)
1.02 (0.040)
15 16
13
12
14
3
4
5
6
7
17
18
1
2
11
10
8
9
9.14 (0.360)
8.64 (0.340)
1.27 (0.050)
1.07 (0.040)
2.16 (0.085)
7.62 (0.300)
7.12 (0.280)
1.65 (0.065)
1.40 (0.055)
0.33 (0.013)
0.08 (0.003)
0.43 (0.017)
0.18 (0.007
Rad.
Rad.
LCC4
PCHANNEL
POWER MOSFET
FEATURES
· SURFACE MOUNT
· SMALL FOOTPRINT
· HERMETICALLY SEALED
· DYNAMIC dv/dt RATING
· AVALANCHE ENERGY RATING
· SIMPLE DRIVE REQUIREMENTS
· LIGHT WEIGHT
V
DSS
-100V
I
D(cont)
-2.2A
R
DS(on)
1.2
W
W
W
W
V
GS
Gate Source Voltage
I
D
Continuous Drain Current @ T
case
= 25°C
I
D
Continuous Drain Current @ T
case
= 100°C
I
DM
Pulsed Drain Current
P
D
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
E
AS
Single Pulse Avalanche Energy
2
dv/dt
Peak Diode Recovery
3
T
J
, T
stg
Operating and Storage Temperature Range
Surface Temperature ( for 5 sec).
±20V
2.2A
1.4A
8.8A
11W
0.090W/°C
87mJ
5.5V/ns
55 to +150°C
300°C
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
MOSFET
TRANSISTOR
PINS
GATE
BASE
4,5
DRAIN
COLLECTOR
1,2,15,16,17,18
SOURCE
EMITTER
6,7,8,9,10,11,12,13
IRFE9110
1/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
100
0.10
1.2
1.38
2
4
0.8
25
250
100
100
200
85
30
4.0
9.8
0.8
1.8
1.9
4.3
30
60
40
40
2.2
8.8
5.5
200
9.0
Negligible
1.8
4.3
11
27
V
GS
= 0
I
D
= 1mA
Reference to 25°C
I
D
= 1mA
V
GS
= 10V
I
D
= 1.4A
V
GS
= 10V
I
D
= 2.2A
V
DS
= V
GS
I
D
= 250
m
A
V
DS
³
15V
I
DS
= 1.4A
V
GS
= 0
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= 20V
V
GS
= 20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 2.2A
V
DS
= 0.5BV
DSS
V
DD
= 50V
I
D
= 2.2A
R
G
= 7.5
W
I
S
= 2.2A
T
J
= 25°C
V
GS
= 0
I
F
= 2.2A
T
J
= 25°C
d
i
/ d
t
£
100A/
m
s V
DD
£
50V
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Drain Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain Source OnState
Resistance
1
Gate Threshold Voltage
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate Source Leakage
Reverse Gate Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain ("Miller") Charge
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Charge
1
Forward TurnOn Time
V
V / °C
W
V
S (
É
)
m
A
nA
pF
nC
ns
A
V
ns
m
C
nH
°C/W
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
R
q
JC
R
q
JPC
STATIC ELECTRICAL RATINGS
Notes
1) Pulse Test: Pulse Width
£
300ms,
d £
2%
2) Repetitive Rating Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
(measured from 6mm down drain lead to centre of die)
Internal Source Inductance
(from 6mm down source lead to source bond pad)
Thermal Resistance Junction Case
Thermal Resistance Junction PC Board
PACKAGE CHARACTERISTICS
THERMAL CHARACTERISTICS
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