LAB
SEME
Semelab plc.
Telephone (01455) 556565. Fax (01455) 552612. Email rf@semelab.co.uk
Prelim. 7/96
D1084UK
P
D
Power Dissipation
BV
DSS
Drain Source Breakdown Voltage
BV
GSS
Gate Source Breakdown Voltage
I
D(sat)
Drain Current
T
STG
Storage Temperature
T
J
Maximum Operating Junction Temperature
62.5W
70V
±20V
5A
65 to 125°C
150°C
MECHANICAL DATA
Dimensions in mm (inches)
1
2
3
4.19
4.82
4.82
5.33
2.41
2.92
0.31
0.45
1.14
1.39
13
.7
1
m
i
n
.
9
.0
1
9
.
52
3.83
4.08
Dia.
12
.
7
0
13
.
7
1
2.66
3.42
4.82
5.33
1.01
1.52
R ad.
0.73
0.88
2.28
2.79
0.726
m in.
9.65
10.66
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
4W 28V 200MHz
SINGLE ENDED
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
· SUITABLE FOR BROAD BAND
APPLICATIONS
· LOW C
rss
· SIMPLE BIAS CIRCUITS
· LOW NOISE
· HIGH GAIN 13dB MINIMUM
· SURFACE MOUNT
TO220 PLASTIC PACKAGE
PIN 1 GATE
PIN 3 SOURCE
PIN 2 DRAIN
PIN 4 DRAIN
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise stated)
APPLICATIONS
· LOW COST DC to 200 MHz
METAL GATE RF SILICON FET
TetraFET
4
LAB
SEME
Semelab plc.
Telephone (01455) 556565. Fax (01455) 552612. Email rf@semelab.co.uk
Prelim. 7/96
D1084UK
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
70
1
1
1
7
0.8
13
40
20:1
60
30
2.5
V
GS
= 0
I
D
= 10mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 1A
V
DS
= 28V
I
DQ
= 0.1A
P
O
= 4W
f = 200MHz
V
DS
= 0V
V
GS
= 5V f = 1MHz
V
DS
= 28V V
GS
= 0
f = 1MHz
V
DS
= 28V V
GS
= 0
f = 1MHz
V
mA
µ
A
V
S
dB
%
--
pF
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise stated)
DrainSource
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
THjcase
Thermal Resistance Junction Case
Max. 2°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
µ
s , Duty Cycle
2%
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