D1031UK
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
Prelim. 2/99
P
D
Power Dissipation
BV
DSS
Drain Source Breakdown Voltage
BV
GSS
Gate Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
30W
70V
±20V
5A
65 to 150°C
200°C
MECHANICAL DATA
Dimensions in mm.
1
2
3
4
3.00
2 PL.
2.07
2 PL.
2 PL.
0.47
0.47
2 PL.
0.10
TYP.
0.381
1.65
2 PL.
5.50 ± 0.15
1.27 ± 0.05
2 PL.
1.27
1.27
0.10 R.
TYP.
0.10
TYP.
6.50 ±
0.15
0.3 R.
4 PL.
1.27
0.80
4 PL.
8
7
6
5
4.90 ± 0.15
0.508
0.360
± 0.005
2.313
± 0.2
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W 28V 1GHz
SINGLE ENDED
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
· SUITABLE FOR BROAD BAND APPLICATIONS
· VERY LOW C
rss
· SIMPLE BIAS CIRCUITS
· LOW NOISE
· HIGH GAIN 13 dB MINIMUM
F-0127 PACKAGE
PIN 1 SOURCE
PIN 2 DRAIN
PIN 3 DRAIN
PIN 4 SOURCE
PIN 5 SOURCE
PIN 6 GATE
PIN 7 GATE
PIN 8 SOURCE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
· HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
METAL GATE RF SILICON FET
TetraFET
Ceramic Material: Alumina.
Parts can also be supplied with AlN or BeO for
improved thermal resistance.
Contact Semelab for details.
D1031UK
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
Prelim. 2/99
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
DrainSource
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
GS
= 0
I
D
= 100mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 1A
P
O
= 10W
V
DS
= 28V
I
DQ
= 0.1A
f = 1GHz
V
DS
= 0V
V
GS
= 5V f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
mA
µ
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
70
1
1
1
7
0.8
13
50
20:1
60
30
2.5
R
THjcase
Thermal Resistance Junction Case
Max. 6°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
µ
s , Duty Cycle
2%
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