Characteristic
Test Conditions
Min.
Typ.
Max. Unit
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/94
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
V
DSS
I
D
I
DM
V
GS
P
D
T
J
, T
STG
T
L
1
3
2
3.55 (0.140)
3.81 (0.150)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
1.01 (0.040)
1.40 (0.055)
15.49 (0.610)
16.26 (0.640)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
20.
80 (
0
.
8
1
9
)
21.
46 (
0
.
8
4
5
)
6.
15
(
0
.
242)
BS
C
19.
81 (
0
.
7
8
0
)
20.
32 (
0
.
8
0
0
)
4.
50
(
0
.
177)
Ma
x
.
1.65 (0.065)
2.13 (0.084)
5.25 (0.215)
B S C
2.87 (0.113)
3.12 (0.123)
TO247AD Package Outline.
Dimensions in mm (inches)
Drain Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate Source Voltage
Total Power Dissipation @ T
case
= 25°C
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063" from Case for 10 Sec.
V
GS
= 0V , I
D
= 250
µ
A
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125°C
V
GS
= ±30V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 1.0mA
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
= 10V , I
D
= 0.5 I
D
[Cont.]
NCHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
500
16
64
±30
240
55 to 150
300
V
A
A
V
W
°C
Drain Source Breakdown Voltage
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate Source Leakage Current
Gate Threshold Voltage
On State Drain Current
2
Drain Source On State Resistance
2
500
250
1000
±100
2
4
16
0.40
V
µ
A
nA
V
A
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
µ
S , Duty Cycle < 2%
STATIC ELECTRICAL RATINGS
(T
case
= 25°C unless otherwise stated)
BFC51
LAB
SEME
V
DSS
500V
I
D(cont)
16.0A
R
DS(on)
0.40
4TH GENERATION MOSFET
Terminal 1
Gate
Terminal 2
Drain
Terminal 3
Source
BFC51
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
16
64
1.3
148
296
592
2.2
4.4
8.8
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/94
I
S
I
SM
V
SD
t
rr
Q
rr
(Body Diode)
(Body Diode)
V
GS
= 0V , I
S
= I
D
[Cont.]
I
S
= I
D
[Cont.] , dl
s
/ dt = 100A/
µ
s
Continuous Source Current
Pulsed Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
µ
C
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
240
240
64
SOA1
SOA2
I
LM
Safe Operating Area
Safe Operating Area
Inductive Current Clamped
W
W
A
Characteristic
Min.
Typ.
Max. Unit
0.51
40
R
JC
R
JA
Junction to Case
Junction to Ambient
°C/W
DYNAMIC CHARACTERISTICS
SOURCE DRAIN DIODE RATINGS AND CHARACTERISTICS
SAFE OPERATING AREA CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
µ
S , Duty Cycle < 2%
3) See MILSTD750 Method 3471
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate Source Charge
Gate Drain ("Miller") Charge
Turnon Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 1.8
pF
nC
ns
1430
1800
330
465
130
200
64
105
8.7
12
34
51
12
24
21
42
51
77
27
54
LAB
SEME
CAUTION -- Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
V
DS
= 0.4V
DSS
, t = 1 Sec.
I
DS
= P
D
/ 0.4V
DSS
V
DS
= P
D
/ I
D
[Cont.]
I
DS
= I
D
[Cont.] , t = 1 Sec.
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