Part Number 2N3053

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Prelim.01/01

2N3053

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

MEDIUM POWER SILICON

NPN PLANAR TRANSISTOR

FEATURES

· V

CEO =

40V

· I

C

= 0.7A

· P

tot

= 5W

V

CBO

Collector

Base Voltage

V

CEO

Collector

Emitter Voltage

V

CER

Collector

Emitter Sustaining Voltage

V

CEX

Collector - Emiiter Voltage

V

EBO

Emitter-Base Voltage

I

C

Collector Current

P

TOT

Power Dissipation T

amb

= 25°C

T

case

= 25°C

T

j

Junction Temperature

T

stg

Storage Temperature

R

th(jc)

Thermal Resistance Junction to Case

R

th(ja)

Thermal Resistance Junction to Ambient

60V

40V

50V

60V

5V

0.7A

1W

5W

200°C

65 to 200°C

35°C / W

175°C / W

MECHANICAL DATA
Dimensions in mm (inches)

TO39 PACKAGE

ABSOLUTE MAXIMUM RATINGS

(T

case

= 25°C unless otherwise stated)

Pin 1 = Emitter

Underside View

Pin 2 = Base

Pin 3 = Collector

0.89

(0.035)

max.

0.66 (0.026)

1.14 (0.045)

0.71 (0.028)

0.86 (0.034)

2.54

(0.100)

5.08 (0.200)

typ.

45°

12.70

(0.500)

min.

4.19 (0.165)
4.95 (0.195)

8.89 (0.35)
9.40 (0.37)

7.75 (0.305)
8.51 (0.335)

7.75 (0.305)
8.51 (0.335)

dia.

1

2

3

Prelim.01/01

2N3053

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Parameter

Test Conditions

Min.

Typ.

Max. Unit

ELECTRICAL CHARACTERISTICS

(Tcase = 25°C unless otherwise stated)

I

C

= 100mA

I

B

= 0

R

BE

= 10

W

I

C

= 100mA

I

C

= 0.1mA

I

E

= 0

I

E

= 0.1mA

I

C

= 0

V

CB

= 30V

I

E

= 0

V

EB

= 4V

I

C

= 0

I

C

= 0.15A

I

B

= 0.015A

I

C

= 0.15A

I

B

= 0.015A

I

C

= 0.15A

V

CE

= 10V

V

CE

= 10V

I

C

= 0.05A

f = 100MHz

V

CB

= 10V

f =1MHz

V

EB

= 10V

f =1MHz

V

CEO(SUS)

Collector Emitter Voltage

V

CER(SUS)*

Collector Emitter Voltage

V

(BR)CBO*

Collector Base Breakdown Voltage

V

(BR)EBO*

Emitter Base Breakdown Voltage

I

CBO

Collector Base Cut-off Current

I

EBO

Emitter - Base Cut-off Current

V

CE(sat)*

Collector Emitter Saturation Voltage

V

BE(sat)*

Base Emitter Saturation Voltage

h

21E*

Static Forward Current Transfer ratio

f

T

Transistion Frequency

C

22b

Output Capacitance

C

11b

Input Capacitance

40

50

60

5

0.25

0.25

1.4

1.7

50

250

100

15

80

V

m

A

V

--

MHz

pF

*

Pulsed

t

p

=

300

m

S

d £

2 %