Prelim.6/99
2N3019
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
NPN SILICON TRANSISTOR
FEATURES
· NPN High Voltage Planar Transistor
· Hermetic TO39 Package
· Full Screening Options Available
V
CBO
Collector
Base Voltage
V
CEO
Collector
Emitter Voltage
V
EBO
Emitter
Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation @ T
A
= 25°C
P
D
Derate above 25°C
P
D
Total Device Dissipation @ T
C
= 25°C
P
D
Derate above 25°C
T
j
Max Junction Temperature
T
stg
Storage Temperature
R
jc
Thermal Resistance Junction to Case
R
ja
Thermal Resistance Junction to Ambient
140V
80V
7V
1A
0.8W
4.6mW / °C
5W
28.6mW / °C
200°C
55 to 200°C
16.5°C / W
89.5°C / W
MECHANICAL DATA
Dimensions in mm (inches)
TO39 PACKAGE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
Pin 1 = Emitter
Underside View
Pin 2 = Base
Pin 3 = Collector
0.89
(0.035)
max.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
typ.
45°
12.70
(0.500)
min.
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
1
2
3
Prelim.6/99
2N3019
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Parameter
Test Conditions
Min.
Typ.
Max. Unit
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
I
C
= 30mA
I
B
= 0
I
C
= 100
m
A
I
E
= 0
I
E
= 100
m
A
I
C
= 0
V
CB
= 90V
I
E
= 0
V
CB
= 90V
I
E
= 0
T
amb
= 150°C
V
BE
= 5V
I
C
= 0
I
C
= 150mA
I
B
= 15mA
I
C
= 500mA
I
B
= 50mA
I
C
= 150mA
I
B
= 15mA
I
C
= 0.1mA
V
CE
= 10V
I
C
= 10mA
V
CE
= 10V
I
C
= 150mA
V
CE
= 10V
I
C
= 500mA
V
CE
= 10V
I
C
= 1A
V
CE
= 10V
I
C
= 150mA
V
CE
= 0.5V
V
(BR)CEO
Collector Emitter Breakdown Voltage
V
(BR)CBO*
Collector Base Breakdown Voltage
V
(BR)EBO*
Emitter Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
V
CE(sat)
Collector Emitter Saturation Voltage
V
BE(sat)
Base Emitter Saturation Voltage
h
FE*
DC Current Gain
T
C
= 55°C
80
140
7
0.01
10
0.010
0.20
0.50
1.1
50
90
100
300
50
15
40
V
V
V
m
A
m
A
V
V
--
f
T
Transition Frequency
C
obo
Output Capacitance
C
ibo
Input Capacitance
h
fe
Small Signal Current Gain
rb'C
c
Collector Base Time Constant
NF
Noise Figure
I
C
= 50mA
V
CE
= 10V
f = 20MHz
V
CB
= 10V
I
E
= 0
f = 1.0MHz
V
BE
= 0.5V
I
C
= 0
f = 1.0MHz
I
C
= 1mA
V
CE
= 5V
f = 1kHz
I
E
= 10mA
V
CB
= 10V
f = 79.8MHz
I
C
= 100
m
A
V
CE
= 10V
f = 1kHz
R
S
= 1K
W
100
400
12
60
80
400
15
400
4
MHz
pF
pF
--
ps
db
t* Pulse test tp = 300
m
s ,
d £
1%
DYNAMIC CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
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