2N2369ACSM
Prelim. 3/00
LAB
SEME
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
HIGH SPEED, MEDIUM POWER, NPN
SWITCHING TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
· SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
· HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
· CECC SCREENING OPTIONS
APPLICATIONS:
Hermetically sealed surface mount version of
the popular 2N2369A for high reliability /
space applications requiring small size and
low weight devices.
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage
V
EBO
Emitter Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation
@ T
A
=25°C
Derate above 25°C
P
D
Total Device Dissipation
@ T
C
=25°C
Derate above 25°C
T
STG
, T
J
Operating and Storage Temperature Range
40V
15V
4.5V
200mA
360mW
2.06mW / °C
680mW
6.85mW / °C
65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
SOT23 CERAMIC
(LCC1 PACKAGE)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise stated)
PAD 1 Base
Underside View
PAD 2 Emitter PAD 3 Collector
2
1
0.51 ± 0.10
(0.02 ± 0.004)
0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.
54 ±
0.
13
(
0
.
10 ±
0.
005)
0.
76
± 0.
1
5
(
0
.
03 ±
0.
00
6)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
rad.
A =
3
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
2N2369ACSM
Prelim. 3/00
LAB
SEME
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
I
C
= 10mA
I
C
= 10
m
A
I
E
= 10
m
A
V
CE
= 20V
V
CE
= 10V
T
A
= +150°C
V
CB
= 20V
T
A
= +125°C
V
EB
= 4V
I
C
= 10mA
I
B
= 1mA
T
A
= +150°C
I
C
= 30mA
I
B
= 3mA
I
C
= 100mA
I
B
= 10mA
I
C
= 10mA
T
A
= +25°C
I
B
= 1mA
T
A
= +150°C
T
A
= 55°C
I
C
= 30mA
I
B
= 3mA
I
C
= 100mA
I
B
= 10mA
I
C
= 10mA
V
CE
= 0.35V
I
C
= 30mA
V
CE
= 0.40V
I
C
= 10mA
V
CE
= 1V
T
A
= 55°C
I
C
= 100mA
V
CE
= 1V
I
C
= 10mA
V
CE
= 10V
f = 100MHz
V
CB
= 5V
I
E
= 0
f = 100kHz to 1MHz
V
EB
= 0.5V
I
C
= 0
f = 100kHz to 1MHz
I
C
= 10mA
I
B1
= I
B2
= 10mA
I
C
= 10mA
I
B1
= 3mA
I
B2
= 1.5mA
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
V
(BR)CEO*
Collector Emitter Breakdown Voltage
V
(BR)CBO
Collector Base Breakdown Voltage
V
(BR)EBO
Emitter Base Breakdown Voltage
I
CES
Collector Emitter Cut-off Current
I
CBO
Collector Base Cut-off Current
I
EBO
Emitter Base Cut-off Current
V
CE(sat)
Collector Emitter Saturation Voltage
V
BE(sat)
Base Emitter Saturation Voltage
h
FE*
Current Gain
|h
fe
|
Magnitude of h
fe
C
ob
Output Capacitance
C
ib
Input Capacitance
t
s
Storage Time
t
on
TurnOn Time
t
off
TurnOff Time
15
40
4.5
0.40
0.30
30
0.20
30
0.25
0.20
0.30
0.25
0.43
0.70
0.85
0.59
1.02
0.90
1.20
40
120
30
120
40
120
20
20
120
5
10
4
5
13
12
18
V
V
V
m
A
m
A
m
A
V
V
--
--
pF
ns
ns
* Pulse Test: t
p
£
300
m
s,
d £
2%.
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