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Part Number MCH5819

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MCH5819
No.7454-1/5
No.
MCH5819
370-0596 11
N 7 4 5 4
No. N 7 4 5 4
MOSFET : N MOS
SBD :
DC / DC
33004


()
1
2
3
5
4
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
(Top view)
N MOS
MCH3408
SBS006M
1
MOS1) 2) 3) 4V
SBD 1) 2)
Absolute Maximum Ratings / Ta=25
MOSFET
unit
VDSS
30
V
VGSS
± 20
V
DC
ID
1.4
A
IDP
PW 10µs, duty cycle 1%
5.6
A
PD
(900mm
2
× 0.8mm) 1unit
0.8
W
Tch
150
Tstg
- 55 125
SBD
unit
VRRM
30
V
VRSM
30
V
IO
0.5
A
IFSM 50Hz 1
3
A
Tj
- 55 125
Tstg
- 55 125
QV
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain

SANYO : MCPH5
2195
(unit : mm)
0.25
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
3
2
4
5
1
2
3
5
4
(Bottom view)
(Top view)
33004 TS IM TA-100373
MCH5819
No.7454-2/5
Electrical Characteristics / Ta=25
1
MOSFET
min
typ
max
unit
V(BR)DSS ID=1mA, VGS=0
30
V
IDSS
VDS=30V, VGS=0
1
µA
IGSS
VGS= ± 16V, VDS=0
± 10
µA
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
y
fs
VDS=10V, ID=700mA
0.85
1.2
S
RDS(on)1
ID=700mA, VGS=10V
230
300
m
RDS(on)2
ID=400mA, VGS=4V
370
520
m
Ciss
VDS=10V, f=1MHz
70
pF
Coss
VDS=10V, f=1MHz
15
pF
Crss
VDS=10V, f=1MHz
10
pF
td(on)
6
ns
tr
3
ns
td(off)
10
ns
tf
4
ns
Qg
2.6
nC
Qgs
VDS=10V, VGS=10V, ID=1.4A
0.6
nC
Qgd
0.5
nC
VSD
IS=1.4A, VGS=0
0.9
1.2
V
2
SBD
min
typ
max
unit
VR
IR=0.5mA
30
V
VF1
IF=0.3A
0.35
0.40
V
VF2
IF=0.5A
0.42
0.47
V
IR
VR=10V
200
µA
C
VR=10V, f=1MHz
20
pF
trr
IF=IR=100mA
10
ns
trr
MOSFET
SBD
PW=10
µ
s
D.C.
1%
P.G
50
G
S
D
ID=700mA
RL=21.4
VDD=15V
VOUT
MCH5819
VIN
10V
0V
VIN
Duty
10%
50
100
10
--5V
trr
100mA
100mA
10mA
10
µ
s
MCH5819
No.7454-3/5
ID=0.4A
0.7A
5
0.1
1.0
7
5
7
2
2
3
3
0.2
0.4
0.6
0.8
1.0
1.2
1.4
--60
--40
--20
0
20
40
60
80
100
120
140
160
0
2
1
4
3
6
5
8
7
10
9
, VGS -- V
RDS(on) -- VGS
, R
DS
(on) -
- m
IT03099
0
0
0.5
1.5
2.0
0.2
1.0
0
100
200
300
400
500
600
700
800
0
0.4
0.6
0.8
1.0
, VDS -- V
ID -- VDS
, I
D
-
- A
VGS=3V
4V
IT03097
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
, VGS -- V
ID -- VGS
, I
D
-
- A
VDS=10V
25
°C
75
°C
Ta= -
-25
°C
IT03098
25
°C
--2
5°
C
Ta=75
°C
, Ta -- °C
RDS(on) -- Ta
, R
DS
(on) -
- m
IT03100
100
200
300
400
500
600
700
800
0
Ta=25°C
5V
6V
8V
10V
ID=0.7A, V
GS
=10V
ID=0.4A, V
GS
=4V
5
3
2
10
7
5
3
2
1.0
, ID -- A
SW Time -- ID
, SW Time -
- ns
VDD=15V
VGS=10V
td(on)
td(off)
tf
tr
IT03103
Ciss, Coss, Crss -- VDS
, ID -- A
IT03101
0.01
0.1
2
3
5
7
2
3
5
7 1.0
2
3
5
7 10
10
1.0
7
5
3
2
7
5
3
2
0.1
,
y
fs
-
- S
y
fs -- ID
VDS=10V
Ta=
75
°C
25°
C
--25
°C
IT03102
0
0.2
0.4
0.6
0.8
1.0
1.4
1.2
0.01
0.1
10
1.0
7
5
3
2
7
5
3
2
7
5
3
2
, VSD -- V
, I
F
-
- A
IF -- VSD
VGS=0
-
-25
°C
25
°C
Ta=75
°C
0
5
10
15
20
25
30
1.0
10
100
7
5
3
2
7
5
3
2
, VDS -- V
Ciss, Coss, Crss -
- pF
f=1MHz
Ciss
Coss
Crss
IT03104
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
MCH5819
No.7454-4/5
0
0.5
1.0
1.5
2.0
2.5
0
2
4
6
8
10
, Qg -- nC
VGS -- Qg
, V
GS
-
- V
VDS=10V
ID=1.4A
IT03105
0
0
20
40
0.2
0.4
0.6
0.8
1.0
60
80
100
120
140
160
, Ta -- °C
PD -- Ta
, P
D
-
- W
IT05807
(900mm
2
×0.8mm) 1unit
A S O
, VDS -- V
, I
D
-
- A
2
3
5
7
2
3
5
7
2
3
5
7
10
1.0
0.1
0.01
0.1
2 3
5 7 1.0
0.01
2 3
5 7
2 3
5 7 10
2 3
5
IT05806
IDP=5.6A
ID=1.4A
Operation in this
area is limited by RDS(on).
100
µs
100ms
DC operation
1ms
10ms
<10µs
Ta=25°C
1
(900mm
2
×0.8mm) 1unit
[SBD]
[SBD]
[SBD]
[MOSFET]
[MOSFET]
[SBD]
[MOSFET]
(1) =60°
(2) =120°
(3) =180°
(4) =180°
180°
360°
360°
(2)
(3)
(4)
(1)
, VR -- V
C -- VR
, C
-- pF
f=1MHz
0
100
10
1.0
0.1
0.01
5
7
3
2
5
7
3
2
5
7
3
2
5
7
3
2
30
15
25
5
20
10
, VR -- V
IR -- VR
, I
R
-
- mA
0
0
0.1
0.2
0.3
0.4
0.4
0.3
0.35
0.25
0.2
0.1
0.05
0.15
0.5
0.6
0.7
, IO -- A
PF(AV) -- IO
, P
F(AV)
-
- W
0
0.1
0.01
0.4
0.2
1.0
2
7
5
3
2
7
5
3
2
0.6
, VF -- V
, I
F
-
- A
IF -- VF
Ta=125
°C
25
°C
100
°C
Ta=125
°C
25°C
50°C
75°C
100°C
IT05808
IT00633
IT00634
IT05809
50
°C
75
°C
1.0
10
2
2
3
5
10
100
7
7
3
5
7
2
3
MCH5819
No.7454-5/5












PS
I
S
20ms
t
50Hz
7 0.01
2
3
7 0.1
0
5
2
3
7
1.0
5
2
3
3.0
3.5
2.0
1.0
2.5
1.5
0.5
, t -- s
, I
FSM
()
-
- A
ID00338
IFSM -- t