MCH5819
No.7454-1/5
No.
MCH5819
370-0596 11
N 7 4 5 4
No. N 7 4 5 4
MOSFET : N MOS
SBD :
DC / DC
33004
()
1
2
3
5
4
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
(Top view)
N MOS
MCH3408
SBS006M
1
MOS1) 2) 3) 4V
SBD 1) 2)
Absolute Maximum Ratings / Ta=25
MOSFET
unit
VDSS
30
V
VGSS
± 20
V
DC
ID
1.4
A
IDP
PW 10µs, duty cycle 1%
5.6
A
PD
(900mm
2
× 0.8mm) 1unit
0.8
W
Tch
150
Tstg
- 55 125
SBD
unit
VRRM
30
V
VRSM
30
V
IO
0.5
A
IFSM 50Hz 1
3
A
Tj
- 55 125
Tstg
- 55 125
QV
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
SANYO : MCPH5
2195
(unit : mm)
0.25
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
3
2
4
5
1
2
3
5
4
(Bottom view)
(Top view)
33004 TS IM TA-100373
MCH5819
No.7454-2/5
Electrical Characteristics / Ta=25
1
MOSFET
min
typ
max
unit
V(BR)DSS ID=1mA, VGS=0
30
V
IDSS
VDS=30V, VGS=0
1
µA
IGSS
VGS= ± 16V, VDS=0
± 10
µA
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
y
fs
VDS=10V, ID=700mA
0.85
1.2
S
RDS(on)1
ID=700mA, VGS=10V
230
300
m
RDS(on)2
ID=400mA, VGS=4V
370
520
m
Ciss
VDS=10V, f=1MHz
70
pF
Coss
VDS=10V, f=1MHz
15
pF
Crss
VDS=10V, f=1MHz
10
pF
td(on)
6
ns
tr
3
ns
td(off)
10
ns
tf
4
ns
Qg
2.6
nC
Qgs
VDS=10V, VGS=10V, ID=1.4A
0.6
nC
Qgd
0.5
nC
VSD
IS=1.4A, VGS=0
0.9
1.2
V
2
SBD
min
typ
max
unit
VR
IR=0.5mA
30
V
VF1
IF=0.3A
0.35
0.40
V
VF2
IF=0.5A
0.42
0.47
V
IR
VR=10V
200
µA
C
VR=10V, f=1MHz
20
pF
trr
IF=IR=100mA
10
ns
trr
MOSFET
SBD
PW=10
µ
s
D.C.
1%
P.G
50
G
S
D
ID=700mA
RL=21.4
VDD=15V
VOUT
MCH5819
VIN
10V
0V
VIN
Duty
10%
50
100
10
--5V
trr
100mA
100mA
10mA
10
µ
s