960202TM2fXHD
2SK2617LS
Absolute Maximum Ratings / Ta=25
°
C
Drain to Source Voltage
500
Gate to Source Voltage
±
30
Drain Current (DC)
4
Drain Current (Pulse)
16
Channel Temperature
150
Storage Temperature
--55 to +150
Allowable power Dissipation
25
V
V
A
A
°
C
°
C
W
Electrical Characteristics / Ta=25
°
C
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
min typ max unit
500
1.0
±
100
V
mA
mA
Cutoff Voltage
Static Drain to Source on State Resistance
3.5
2.2
1.2
V
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
550
190
pF
pF
Turn-ON Delay Time
95
pF
Rise Time
Turn-oFF Delay Time
Fall Time
15
15
45
ns
ns
ns
Diode Forward Voltage
ns
5.5
1.1
1.6
1.2
V
25
(TC=25
°
C)
Switching Time Test Circuit
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
V(BR)DSS
ID=1mA , VGS=0
IDSS
VDS=500V , VGS=0
IGSS
VGS=
±
30V , VDS=0
VGS(Off)
VDS=10V , ID=1mA
| yfs |
VDS=10V , ID=2A
RDS(On)
ID=2A , VGS=15V
Ciss
VDS=20V , f=1MHz
Coss
VDS=20V , f=1MHz
Crss
VDS=20V , f=1MHz
td(On)
tr
td(Off)
tf
VSD
IS =4A , VGS = 0
Total Gate Charge
Qg
VDS=200V , ID=4A
VGS=10V
15
nC
TENTATIVE
unit
Forward Transfer Admittance
Case Outline
Features and Applications
· Low ON-state resistance.
· Low Qg
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Ttokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
See Specified Test
Circuit
50
P.G
2SK2617LS
S
G
D
VOUT
VDD=200V
ID=2A
RL=100
PW=1
µ
S
D.C.
0.5%
VGS=15V
RGS
Specifications and information herein are subject to change without notice.
3.5
7.2
16.0
16.1
3.6
10.0
0.9
1.2
14.0
0.75
4.5
2.8
0.6
0.7
2.4
2.55
2.55
1
2
3
TO-220FI(LS)
(unit:mm)
3.2
N- Channel MOS Silicon FET
Very High-Speed Switching Applications
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