2SC4637LS
No.3706-1/3
Features
·
High breakdown voltage(VCEO min=1800V).
·
Small Cob(typical Cob=1.8pF).
·
Full-isolation package.
·
High reliability(Adoption of HVP process).
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
2000
V
Collector-to-Emitter Voltage
VCEO
1800
V
Emitter-to-Base Voltage
VEBO
5
V
Collector Current
IC
15
mA
Collector Current (Pulse)
ICP
50
mA
Collector Dissipation
PC
2
W
Junction Temperature
Tj
150
°
C
Storage Temperature
Tstg
--55 to +150
°
C
Electrical Characteristics
at Ta=25
°
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=1800V, IE=0
1
µ
A
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
1
µ
A
DC Current Gain
hFE
VCE=5V, IC=300
µ
A
10
60
Gain-Bandwidth Product
fT
VCE=10V, IC=300
µ
A
6
MHz
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN3706B
2SC4637LS
1800V / 15mA High-Voltage Amplifier,
High-Voltage Switching Applications
Package Dimensions
unit : mm
2079D
[2SC4637LS]
11502 TS IM TA-3427 / 11599 HA (KT) / 80296 YK (KOTO) TA-0465, AX-7506, 8-6928
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220FI(LS)
16.0
14.0
3.6
3.5
7.2
16.1
0.7
2.55
2.55
2.4
1.2
0.9
0.75
0.6
1.2
4.5
2.8
1 2 3
10.0
3.2
2SC4637LS
No.3706-2/3
hFE -- IC
1.0
0.1
2
3
5
7
3
5
7
10
2
3
5
7
2
2
10
2
3
5
7
100
3
5
7
VCE=5V
f T -- IC
1.0
10
3
5
7
2
2
10
2
3
5
100
7
1.0
2
3
5 7
0.1
2
3
5 7
5 7
Cob -- VCB
f=1MHz
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IC -- VBE(on)
0
2
4
6
8
10
12
14
16
0
100
200
300
400
500
0
2
4
6
8
10
IC -- VCE
IB=0
2
µ
A
4
µ
A
6
µ
A
0
2
4
6
8
10
0
2
4
6
8
10
IC -- VCE
IB=0
50
µ
A
T
a=120
°
C
25
°
C
-
-40
°
C
Ta=120
°
C
25
°
C
--40
°
C
ITR07379
ITR07380
ITR07382
ITR07381
ITR07384
ITR07383
0.1
2
3
5
7
1.0
2
3
5
7
2
3
5
VCE=10V
5
1.0
2
3
5
7
7
2
3
5
500
µ
A
1mA
100
µ
A
200
µ
A
300
µ
A
400
µ
A
8
µ
A
10
µ
A
12
µ
A
14
µ
A
18
µ
A
16
µ
A
20
µ
A
900
µ
A
800
µ
A
700
µ
A
600
µ
A
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
--
µ
A
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
--
mA
Collector Current, IC -- mA
DC Current Gain, h
FE
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob
-
-
pF
Gain-Bandwidth Product, f
T
-
-
MHz
Collector Current, IC -- mA
Base-to-Emitter ON Voltage, VBE(on) -- V
Collector Current, I
C
-
-
mA
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=600
µ
A, IB=120
µ
A
5
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=600
µ
A, IB=120
µ
A
2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=100
µ
A, IE=0
2000
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=100
µ
A, RBE=
1800
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10
µ
A, IC=0
5
V
Output Capacitance
Cob
VCB=100V, f=1MHz
1.8
pF
Thermal Resistance
Rthj-c
Junction case
8.3
°
C / W
2SC4637LS
No.3706-3/3
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2002. Specifications and information herein are subject
to change without notice.
PS
PC -- Ta
ITR07388
0
20
40
60
80
100
120
140
160
0
1.2
0.8
1.6
2.0
2.4
0.4
ITR07387
A S O
0.1
1.0
10
5
3
2
7
5
3
2
7
100
5
3
2
7
100
1000
2
5
3
7
5
7
2
5
3
10ms
200
µ
s
500
µ
s
DC operation
ICP=50mA
IC=15mA
1ms
100
µ
s
1.0
0.1
2
3
5
7
3
5
7
10
2
3
5
7
2
0.1
1.0
2
3
5
7
10
2
3
5
7
Ta=120
°
C
25
°
C
--40
°
C
VCE(sat) -- IC
ITR07385
IC / IB=5
1.0
0.1
2
3
5
7
3
5
7
10
2
3
5
7
2
2
1.0
3
5
7
2
3
5
7
Ta=
--40
°
C
25
°
C
120
°
C
VBE(sat) -- IC
ITR07386
IC / IB=5
Collector Current, IC -- mA
Base-to-Emitter
Saturation V
oltage, V
BE
(sat) -
-
V
Collector Current, IC -- mA
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
V
Collector-to-Emitter Voltage, VCE -- V
Ambient Temperature, Ta --
°
C
Tc=25
°
C
Single pulse
No heat sink
Collector Current, I
C
-
-
mA
Collector Dissipation, P
C
-
-
W
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