sAbsolute Maximum Ratings
sElectrical Characteristics
Parameter
Symbol
Ratings
Unit
Conditions
V
Conduction angle 360
°
, Tc=97
°
C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125
°
C
400
A
A
V
A
W
W
°
C
°
C
V
DRM
I
T(RMS)
I
TSM
V
GM
I
GM
P
GM
P
G(AV)
Tj
Tstg
1.2
10
6
0.5
1
0.1
40 to
+
125
40 to
+
125
V
T
2
+
, G
+
T
2
+
, G
T
2
, G
T
2
, G
+
T
2
+
, G
+
T
2
+
, G
T
2
, G
T
2
, G
+
V
mA
V
mA
°
C/W
Parameter
Symbol
Ratings
typ
min
max
Unit
Conditions
mA
I
DRM
V
TM
V
GT
I
GT
V
GD
I
H
Rth
0.7
0.8
2.0
2.0
1.8
2.3
13.0
2.0
1.2
3.0
3.0
3.0
20.0
5.0
0.1
1.6
3.5
1.2
0.1
0.1
1.0
V
D
=
V
DRM
, R
GK
=
, Tj=125
°
C
V
D
=
V
DRM
, R
GK
=
, Tj=25
°
C
Pulse test, I
TM
=
1.6A
V
D
=
6V, R
L
=
10
, T
C
=
25
°
C
V
D
=
6V, R
L
=
10
, T
C
=
25
°
C
Junction to case
V
D
=
6V
V
D
=
1/2
×
V
DRM
, Tj=125
°
C
62
2.54
1
3
2
4
5
6
7
8
3
2
1
8
4
6
5
7
TR
1
TR
2
TR
3
T
G
T
G
T
G
T
T
1
1
2
2
2
7
!
2.54 =17.78
±
0.25
20.2
±
0.2
0.5
±
0.15
1.0
±
0.25
4.0
±
0.2
9.0
±
0.2
2.3
±
0.2
11.3
±
0.2
4.7
±
0.5
1.2
±
0.2
0.5
±
0.15
C1.5
±
0.5
STA203A
1.2A 3 circuits Triac Array
s Features
q
1.2A 3 Triacs combined one package
q
Repetitive peak off-state voltage: V
DRM
=400V
q
RMS on-state current: I
T(RMS)
=1.2A
q
Gate trigger current: I
GT
=3mA max (MODE , , )
Weight: Approx. 2.1g
External Dimensions
(Unit: mm)
a. Part Number
b. Lot Number
a
b
(Tj=25
°
C, unless otherwise specified)
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak gate voltage
Peak gate current
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Thermal resistance
0
5
10
15
0
0.5
1.0
1.5
0.5
1
5
10
50
1.0
2.0
3.6
3.0
0
10
8
6
4
2
12
1
5
10
50
100
50Hz
0
4
8
12
0
2
4
0
0
1.0
3.0
2.0
0.5
1.0
1.5
0
0
25
50
100
75
150
125
0.5
1.0
1.5
0
0.5
1.0
1.5
0
25
50
100
75
150
125
0.5
1
10
100
1000
0.1
1
30
10
0.5
1
10
100
1000
0.1
1
30
10
0.5
1
10
100
1000
0.1
1
30
10
0.5
1
10
100
1000
0.5
1.0
2.0
1.5
0.5
1
10
100
1000
0.5
1.0
2.0
1.5
0.5
1
10
100
1000
0.5
1.0
2.0
1.5
25
°
C
75
°
C
125
°
C
25
°
C
75
°
C
125
°
C
25
°
C
75
°
C
125
°
C
25
°
C
75
°
C
125
°
C
25
°
C
75
°
C
125
°
C
1
10
10
10
1
200
100
10
2
3
10
4
10
5
1 element operation
2 elements operation
TR
1
, TR
2
or
TR
2
, TR
3
( TR
2
, TR
3
)
63
STA203A
On-state voltage
v
T
( V )
On-state current
i
T
(A)
v
T
i
T
Characteristics (max)
Tj=25
°
C
Tj=125
°
C
Number of cycle
Surge on-state current I
TSM
(A)
I
TSM
Ratings
1cycle
10 ms
I
TSM
Tj=125
°
C
Initial junction temperature
Gate current
i
GF
(A)
Gate voltage
v
GF
(V)
Gate Characteristics
P
G
M
=1W
See graph at the upper right
Gate trigger voltage V
GT
(V)
Gate trigger current
I
GT
(mA)
Tj
=
40
°
C
Tj
=25
°
C
Tj
=
20
°
C
RMS on-state current I
T(RMS)
(A)
I
T(RMS)
P
T(AV)
Characteristics
Average on-state power P
T
( AV
)
(W
)
Full-cycle sinewave
Conduction angle
=
1
+
2
= 360
°
1
2
Full-cycle sinewave
Conduction angle
=
1
+
2
= 360
°
1
2
RMS on-state current I
T(RMS)
(A)
I
T(RMS)
Tc Ratings
Case temperature T
C
(
°
C)
(
)
2 elements operation
3 elements operation
I
T(RMS)
Ta Ratings
RMS on-state current I
T(RMS)
(A)
Ambient temperature T
a
(
°
C)
Full-cycle sinewave
Conduction angle : 360
°
Self-supporting
Natural cooling
1 element operation
2 elements operation
TR
1
, TR
2
or
TR
2
, TR
3
(
)
( TR
2
, TR
3
)
2 elements operation
3 elements operation
Pulse trigger temperature Characteristics
i
gt
(Typical)
(MODE )
(MODE )
(MODE )
(MODE )
(MODE )
(MODE )
Pulse trigger temperature Characteristics
v
gt
( Typical)
Pulse width
t
w (
µ
s)
v
gt
V
GT
DC gate trigger
voltage at 25
°
C
( )
( )
Gate trigger voltage
at Tj and
t
w
Pulse width
t
w (
µ
s)
v
gt
V
GT
DC gate trigger
voltage at 25
°
C
( )
( )
Gate trigger voltage
at Tj and
t
w
Pulse width
t
w (
µ
s)
v
gt
V
GT
DC gate trigger
voltage at 25
°
C
( )
( )
Gate trigger voltage
at Tj and
t
w
Tj= 40
°
C
20
°
C
v
gt
t
w
v
gt
t
w
v
gt
t
w
25
°
C
75
°
C
125
°
C
Tj= 40
°
C
20
°
C
Tj= 40
°
C
20
°
C
Pulse width
t
w (
µ
s)
i
gt
I
GT
DC gate trigger
current at 25
°
C
( )
( )
Gate trigger current
at Tj and
t
w
Pulse width
t
w (
µ
s)
i
gt
I
GT
DC gate trigger
current at 25
°
C
( )
( )
Gate trigger current
at Tj and
t
w
Pulse width
t
w (
µ
s)
i
gt
I
GT
DC gate trigger
current at 25
°
C
( )
( )
Gate trigger current
at Tj and
t
w
Tj= 40
°
C
20
°
C
i
gt
t
w
i
gt
t
w
i
gt
t
w
Tj= 40
°
C
20
°
C
Tj= 40
°
C
20
°
C
t, Time (ms)
Transient thermal resistance
r
th
(
°
C/
W
)
Transient thermal resistance
Characteristics
Junction to
operating
environment
Junction to
T
2
Lead
1 element operation
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