57
Forward voltage
V
F
Condition
(V)
I
F
typ
max
(mA)
Part
Number
Reverse current
I
R
Condition
(
µ
A)
V
R
max
(V)
Optical Power
I
e
(mW/sr)
typ
Peak wavelength
P
Condition
(nm)
I
F
typ
(mA)
Spectrum half width
Condition
(nm)
I
F
typ
(mA)
Lens color
Condition
Chip
material
3
Round Infrared LED
SID2010 Series
Directivity (Typical)
External Dimensions
Symbol
Unit
Rating
Condition
I
F
mA
150
I
F
mA/
°
C
-
1.33
Above 25
°
C
I
FP
mA
1000
f=1kHz, tw
10
µ
s
V
R
V
5
Top
°
C
-
30 to +85
Tstg
°
C
-
30 to +100
Absolute maximum ratings (Ta=25
°
C)
SID2010Series
Tolerance:
±
0.3
(Unit: mm)
SID2010C
SID2K10C
Electrical Optical characteristics (Ta=25
°
C)
7.0
14
940
940
50
50
50
50
50
50
1.3
1.3
1.5
1.5
50
50
10
10
5
5
GaAs
Clear
Clear
I
F
=50mA
I
F
=50mA
1.7
ø
3.8
0.4
1.0min
25.8min
3.5
±
0.1
(1.3)
0.45
±
0.1
0.65max
Resin burr 0.3max
Resin heap 1.5max
ø
3.1
±
0.1
Cathode
(2.54)
0.4
±
0.1
90
°
60
°
30
°
0
°
90
°
60
°
30
°
0
50
100%
50
100%
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