Parameter
Symbol
Unit
Conditions
Ratings
Absolute Maximum Ratings
Electrical Characteristics
Parameter
Symbol
min
typ
max
Unit
Conditions
Ratings
(Ta=25ºC)
Power supply voltage
Input terminal voltage
DIAG output applied voltage
Voltage across power supply
and drive terminal
Power dissipation
Input current
Operating power supply voltage
Quiescent circuit current
Thermal protection starting
temperature
Open load detection resistor
Output transfer time
DIAG output transfer time
(V
Bopr
=14V, Ta=25ºC unless otherwise specified)
Junction temperature
Operating temperature
Storage temperature
V
B
V
IN
V
DIAG
V
Bopr
Lo output
V
IN
= 5V
V
IN
= 0V
V
O
= V
Bopr
1.9V
V
Bopr
6V
I
O
= 1A
I
O
= 1A
I
O
= 1A
I
O
= 1A
V
5
12
6.0
0.8
0
16
mA
1.0
100
mA
30
8
30
15
10
15
30
30
30
µ
A
ºC
k
µ
S
µ
S
µ
S
µ
S
Iq
Threshold input voltage
3.0
V
V
IN
th
I
IN
I
IN
T
TSD
Overcurrent protection starting
current
1.6
1
150
A
I
S
Ropen
Leak current of DIAG output
V
DIAG
= 5V
100
µ
A
I
DGH
Saturation voltage of DIAG output
I
DIAG
= 3mA
0.3
V
V
DL
Saturation voltage of output
transistor
I
O
1.0A, V
Bopr
= 6 to 16V
0.5
V
V
CE (sat)
Output terminal sink current
V
O
= 0V, V
IN
= 0V
2.0
mA
I
O (off)
T
ON
T
OFF
T
PLH
T
PHL
V
BD
P
D
Tj
T
OP
Tstg
Hi output
Lo output
V
V
Without heatsink, all circuits operating
V
V
W
ºC
ºC
ºC
13 to +40
0.3 to +7.0
Drive terminal applied voltage
V
D
V
0.3 to V
B
0.3 to +7.0
DIAG output source current
I
DIAG
mA
3
V
B
0.4
Output current
I
O
A
1.5
2.6
40 to +150
40 to +100
40 to +150
Note: * The rule of protection against reverse connection of power supply is V
B
= 13V, one minute
(all terminals except, V
B
and GND, are open).
Equivalent Circuit Diagram
Standard Circuit Diagram
Diagnostic Function
External Dimensions
(unit: mm)
Features
q Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
q Low saturation PNP transistor use
q Allows direct driving using LS-TTL and C-MOS logic levels
q Built-in overcurrent and thermal protection circuits
q Built-in protection against reverse connection of power supply
q Tj = 150ºC guaranteed
q Surface-mount full-mold package
V
IN
V
O
H
H
L
L
Truth table
SDH04
P
Z
D
1
DIAG
5.1k
GND
IN
Out
V
CC
V
B
Load
Note 1: A pull-down resistor (11 k
typ.) is connected to the IN terminal.
V
OUT
turns "L" when a high impedance is connected to the IN terminal in
series.
GND
GND
GND
GND
V
B
V
IN
V
OUT
I
O
V
DIAG
Normal
Shorted load
Open load
Overvoltage
Overheat
ERROR SIGNAL for CPU
TSD
OVER
VOLTAGE
OPEN
OPEN
SHORT
Is
3.0V
0.8V
DIAG DET.
DIAG DET.
GND
4,5,13
Drive
Drive
O.C.P
O.C.P
T.S.D
CONT.
11k
typ.
CONT.
11k
typ.
Pre. Reg.
IN2
DIAG2
7
6
IN1
2
3
DIAG1
The MIC is bound by the dotted lines.
9,12,16
V
B
Out1
1,15
D1
14
8,10
11
Out2
D2
[Abbreviations]
Drive: Drive circuit
CONT: ON/OFF circuit
Pre.Reg: Pre-regulator
DIAG.DET.: Diagnostic circuit
O.C.P.: Overcurrent protection
T.S.D.: Thermal protection
Surface-mount Dual Circuit High-side Power Switch Array SDH04
30
a: Type No.
b: Lot No.
a
b
20.0max
2.54
0.89
8.0
6.3
0 to 0.15
3.0
0.25
9.8
1.0
19.56
6.8max
0.75
+0.15
0.05
+0.15
0.05
0.3
16
Pin 1
8
9
4.0max
3.6
1.4
SMD-16A
*1. The base terminal (D terminal) is connected to the output
transistor base. It is also connected to the control monolithic
IC. Do not, therefore, apply an external voltage in operation.
*2. SDH04 have two or three terminals of the same function (
V
B
,
Out1, Out 2
, GND). The terminals of the same function must be
shorted at a pattern near the product.
*
2
*
2
*
1
*
2
*
2
*
1
±
0.2
±
0.25
±
0.15
±
0.2
±
0.2
±
0.2
±
0.2
±
0.3
±
0.3
±
0.5
0
10
20
30
0
Iq
(mA)
V
B
(V)
10
20
46
40
V
IN
=
0V
V
IN
=
5V
0
10
20
30
0
20
50
40
I
B
(mA)
V
B
(V)
30
10
46
40
40ºC
25ºC
125ºC
Ta
=
V
IN
=
0V
V
IN
=
5V
0
10
20
30
0
40
100
80
I
B
(mA)
V
B
(V)
60
20
46
40
0
1
2
0
0.5
1.5
V
CE
(sat)
(V)
I
O
(A)
1.0
3
125ºC
25ºC
Ta
=
40ºC
40ºC
25ºC
Ta=
125ºC
V
B
= 16V
V
B
= 6V
0
1
2
0
15
V
O
(V)
I
O
(A)
10
5
20
4
3
0
1
2
0
15
V
O
(V)
V
IN
(V)
10
5
3
V
B
=
14V I
O
=
1A
40ºC
25ºC
14V
6V
V
B
=
18V
0
1
2
0
15
V
O
(V)
I
O
(A)
10
5
20
4
3
14V
6V
V
B
=
18V
0
1
2
0
15
V
O
(V)
I
O
(A)
10
5
20
4
3
14V
6V
V
B
=
18V
Ta
=
125ºC
0
2
4
6
8
0
1.0
0.8
0.6
0.4
0.2
I
IN
(mA)
V
IN
(V)
10
50
0
50
100
0
1.0
0.5
I
INL
(
µ
A)
Ta (ºC)
150
V
B
=
14V
V
B
= 14V V
IN
= 0V
50
0
100
150
0
15
10
5
V
O
(V)
Ta (ºC)
200
V
B
=
14V I
O
=
10mA
40ºC
25ºC
Ta
=
125ºC
V
O
shorted
V
O
open
V
IN
=
0V
Ta
=
40ºC
25ºC
125ºC
31
50
0
50
100
0
0.2
V
DL
(V)
Ta (ºC)
0.1
0.3
150
V
B
=
14V
I
DIAG
=
3mA
s
Quiescent Circuit Current (dual circuit)
s
Circuit Current (single circuit)
s
Circuit Current (dual circuit)
s
Overcurrent Protection Characteristics
(Ta=40ºC)
s
Overcurrent Protection Characteristics
(Ta=25ºC)
s
Input Terminal Source Current
s
Threshold Characteristics of Input Voltage
s
Overcurrent Protection Characteristics
(Ta=125ºC)
s
Saturation Voltage of Output Transistor
s
Saturation Voltage of DIAG Output
s
Thermal Protection Characteristics
s
Input Terminal Sink Current
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