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Part Number US5U30

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US5U30
Transistor
1/4
Small switching (­20V, ­1.5A)
US5U30

Features External dimensions (Unit : mm)
1) The US5U30 conbines Pch MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Pch MOSFET have a low on-state resistance
with a fast switching.
3) Pch MOSFET is reacted a low voltage drive(2.5V)
4) The Independently connected Schottky barrier diode
have a low forward voltate.

Applications
Load switch, DC/DC conversion

Structure Equivalent circuit
Silicon P-channel MOSFET
Schottky Barrier DIODE

Packaging specifications
US5U30
TR
3000
Type
Package
Code
Taping
Basic ordering unit (pieces)

Absolute maximum ratings (Ta=25
°
C)
Drain current
< Di >
< MOSFET AND Di >
< MOSFET >
Source current
(
Body diode
)
Parameter
Symbol
W/TOTAL/MOUNTED ON
A CERAMIC BOARD
Drain
-
source voltage
V
DSS
V
-
20
Gate
-
source voltage
V
GSS
V
±
12
Continuous
I
D
A
±
1
Repetitive peak reverse voltage
V
RM
V
25
Reverse voltage
V
R
V
20
Forward current
I
F
A
0.5
Forward current surge peak
60HZ / 1CYC.
I
FSM
A
2
Total power dissipation
P
D
1.0
Limits
Unit
Continuous
I
S
-
0.4
A
Pulsed
I
SP
-
4
PW 10
µ
s DUTY CYCLE 1%
A
Pulsed
I
DP
±
4
A
PW 10
µ
s DUTY CYCLE 1%
Channel temperature
Tch
150
C
Junction temperature
Tj
150
C
Range of storage temperature
Tstg
-
55 to 150
C
0.3
0.77
0.17
0.15Max.
2.0
1.3
0.65
0.65
(2)
(1)
(3)
(5)
(4)
1.7
0.2
0.2
2.1
0~0.1
0.85Max.
Abbreviated symbol : U30
Each lead has same dimensions
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
1 ESD protection diode
2 Body diode
2
1
(1)
(2)
(5)
(3)
(4)
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US5U30
Transistor
2/4
Electrical characteristics (Ta=25
°
C)
Parameter
Symbol
I
GSS
Y
fs
µ
A
V
GS
=
±
12V, V
DS
=0V
V
DD
-
15
V
V
DD
-
15
V
Unit
Conditions
V
(BR) DSS
V
I
D
=
-
1mA, V
GS
=0V
I
DSS
µ
A
V
DS
=
-
20V, V
GS
=0V
V
GS (th)
V
V
DS
=
-
10V, I
D
=
-
1mA
m
I
D
=
-
1A, V
GS
=
-
4.5V
R
DS (on)
m
I
D
=
-
1A, V
GS
=
-
4V
m
I
D
=
-
0.5A, V
GS
=
-
2.5V
S
V
DS
=
-
10V, I
D
=
-
0.5A
C
iss
pF
V
DS
=
-
10V
C
oss
pF
V
GS
=0V
C
rss
pF
f=1MHz
t
d (on)
ns
I
D
=
-
0.5A
t
r
ns
t
d (off)
ns
V
GS
=
-
4.5V
t
f
ns
R
L
=30
Q
g
nC
R
G
=10
R
L
=15
R
G
=10
Q
gs
-
Typ.
-
-
-
280
310
570
-
150
20
20
9
8
25
10
2.1
0.5
0.5
nC
V
GS
=
-
4.5V
Q
gd
Min.
-
-
20
-
-
0.7
-
-
-
0.7
-
-
-
-
-
-
-
-
-
-
±
10
Max.
-
-
1
-
2.0
390
430
800
-
-
-
-
-
-
-
-
-
-
-
nC
I
D
=
-
1A



Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
charge
Gate-drain
charge
Pulsed
<
MOSFET
>
-
-
0.36
V
I
F
=0.1A
-
-
0.47
V
I
F
=0.5A
I
R
-
-
100
µ
A
V
R
=20V
V
SD
-
-
-
1.2
V
I
S
=
-
0.4A, V
GS
=0V
Forward voltage
Reverse leakage
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
<
MOSFET
>
V
F
Forward voltage drop
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
<
Di
>





















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US5U30
Transistor
3/4
Electrical characteristic curves
Fig.1 Typical Transfer Characteristics
0
0.5
1.0
0.001
0.1
1
0.01
10
1.5
Gate
-
Source Voltage
:
V
GS
[
V
]
Drain Current :
-
I
D
(A)
2.0
2.5
3.0
3.5
4.0
Ta
=
125
°
C
75
°
C
25
°
C
-
20
°
C
V
DS
=
-
10V
Pulsed
Fig.2 Static Drain
-
Source On
-
State
Resistance
0.1
1
10
100
1000
10
Drain Current
:
-
I
D
[
A
]
Static Drain
-
Source On
-
State Resistance
75 C
25 C
-
25 C
Ta=125 C
R
DS
(
on
)[
m
]
vs.Drain Current
V
GS
=
-
4.5V
Pulsed
Fig.3 Static Drain
-
Source On
-
State
Resistance
0.1
1
10
100
1000
10
Drain Current
:
-
I
D
[
A
]
Static Drain
-
Source On
-
State Resistance
R
DS
(
on
)[
m
]
vs.Drain Current
V
GS
=
-
4V
Pulsed
Ta=125 C
75 C
25 C
-
25 C

Fig.4 Static Drain
-
Source On
-
State
0.1
1
10
100
1000
10
Drain Current
: -
I
D
[
A
]
Static Drain
-
Source On
-
State Resistance
Ta=125 C
75 C
25 C
-
25 C
R
DS
(
on
)[
m
]
Resistance vs.Drain
-
Current
V
GS
=
-
2.5V
Pulsed
10
0
12
8
4
2
6
0
Static Drain
-
Source On
-
State Resistance
Gate
-
Source Voltage
: -
V
GS
[
V
]
Fig.5 Static Drain
-
Source On
-
State
50
100
150
200
250
300
350
400
I
D=
-
0
.
75A
-
1
.
5A
R
DS
(
on
)
[m
]
vs.Gate
-
Source Voltage
Resistance
Ta=25 C
Pulsed
Fig.6 Static Drain
-
Source On
-
State
Resistance
0.1
1
10
100
1000
10
Drain Current
: -
I
D
[
A
]
Static Drain-Source On
-
State Resistance
vs.Drain Current
R
DS
(
on
)[
m
]
VGS=
-
2
.
5V
-
4
.
0V
-
4
.
5V
Ta=25 C
Pulsed

0
0.5
1.0
1.5
Source
-
Drain Voltage
: -
V
SD
[
V
]
Fig.7 Reverse Drain Current
0.01
Reverse Drain Current
: -
I
DR
[
A
]
0.1
10
1
2.0
Ta=125 C
75 C
25 C
-
25 C
vs. Source-Drain Current
V
GS
=0V
Pulsed
0.01
0.1
1
10
100
Drain
-
Source Voltage
: -
V
DS
[
V
]
Fig.8 Typical Capactitance
10
100
10000
1000
vs.Drain
-
Source Voltage
Capacitance
:
C
[
pF
]
Ciss
Coss
Crss
Ta=25 C
f=1MHZ
V
GS
=0V
0.01
0.1
1
10
Drain Current
: -
I
D
[
A
]
Fig.9 Switching Characteristics
1
10
1000
100
td
(
off
)
td
(
on
)
tr
tf
Switching Time
:
t
[
ns
]
Ta=25 C
V
DD
=
-
15V
V
GS
=
-
4.5V
R
G
=10
Pulsed





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US5U30
Transistor
4/4
Fig.10 Dynamic Input Characteristics
0
1
0
4
8
6
Total Gate Charge
:
Qg
[
nC
]
Gate-Source Voltage: -V
GS
[
V
]
2
3
4
5
1
2
3
5
6
7
Ta=25 C
V
DD
=
-
15V
I
D
=
-
2.5A
R
G
=10
Pulsed
Forward Voltage
:
V
F
[
V
]
Fig.11 Forward Temperature Characteristics
Forward Current
:
I
F
[
mA
]
0.1
1
10
100
1000
0
0.1
0.2
0.3
0.4
0.5
0.6
Ta=125 C
75 C
25 C
-
25 C
Reverse Voltage
:
V
R
[
V
]
Fig.12 Reverse Temperature Characteristics
Reverse Current
:
I
R
[
A
]
0.0001
0.001
0.01
0.1
100
10
1
0
10
20
30
40
125 C
75 C
25 C
-
25 C

Measurement circuits
Fig.13 Switching Time Measurement Circuit
V
GS
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
90%
10%
90%
10%
10%
V
GS
V
DS
90%
t
f
t
off
t
d(off)
t
r
t
on
t
d(on)
Fig.14 Switching Waveforms
50%
50%
Pulse Width

Fig.15 Gate Charge Measurement Circuit
V
GS
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
I
G
(Const)
Fig.16 Gate Charge Waveforms
V
GS
Qg
Qgs
Qgd
V
G
Charge
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Appendix
Appendix1-Rev1.0


The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
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transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
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Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.