EMX4 / UMX4N / IMX4
Transistors
Rev.A
1/3
High transition frequency (dual transistors)
EMX4 / UMX4N / IMX4
Features
1) Two 2SC3837K chips in a EMT or UMT or SMT package.
2) High transition frequency. (f
T
=1.5GHz)
3) Low output capacitance. (Cob=0.9pF)
Equivalent circuits
EMX4 / UMX4N
(3)
(2)
(1)
(4)
(5)
(6)
IMX4
(4)
(5)
(6)
(3)
(2)
(1)
Absolute maximum ratings (Ta=25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
30
20
3
50
300(TOTAL)
150(TOTAL)
EMX4 / UMX4N
IMX4
150
-
55 to
+
150
Unit
V
V
V
mA
mW
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
1
2
Package, marking, and packaging specifications
Type
EMX4
EMT6
X4
T2R
8000
IMX4
SMT6
X4
T108
3000
UMX4N
UMT6
X4
TR
3000
Package
Marking
Code
Basic ordering unit (pieces)
External dimensions (Unit : mm)
UMX4N
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
0~0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
IMX4
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
( 6
)
( 5
)
( 4
)
0.3Min.
0.15
0.3
1.1
0.8
0~0.1
( 3
)
2.8
1.6
1.9
2.9
0.95
( 2
)
0.95
( 1
)
Each lead has same dimensions
ROHM : EMT6
EMX4
0.22
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
Electrical characteristics (Ta=25
°
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Transition frequency
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
30
20
3
-
-
27
-
-
-
-
-
-
-
-
-
-
-
-
0.5
0.5
270
0.5
1.6
V
V
V
µ
A
µ
A
-
V
MHz
Cob
600
1500
0.95
-
pF
I
C
=
10
µ
A
I
C
=
1mA
I
E
=
10
µ
A
V
CB
=
15V
V
EB
=
2V
V
CE
/I
E
=
10V/
-
10mA, f
=
200MHz
V
CB
/f
=
10V/1MHz, I
E
=
0A
I
C
/I
B
=
20mA/4mA
V
CE
/I
C
=
10V/10mA
Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
-
13
rbb' Cc
6
ps
V
CB
=
10V, I
C
=
10mA , f
=
31.8MHz
Collector-base time constant
-
-
NF
4.5
dB
V
CE
=
12V, I
C
=
2mA , f
=
200MHz , Rg
=
50
Noise factor
EMX4 / UMX4N / IMX4
Transistors
Rev.A
2/3
Electrical characteristic curves
0.1 0.2
0.5
1
2
5
10 20
50
10
COLLECTOR CURRENT : I
C
(mA)
Fig.1 DC current gain vs. collector current
DC CURRENT TRANSFER RATIO :h
FE
100
20
50
200
500
Ta
=
25
°
C
V
CE
=
10V
0.1 0.2
0.5
1
2
5
10 20
50
0.1
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.3 Capacitance vs. reverse bias voltage
OUTPUT CAPACITANCE :C
oB
(pF)
FEEDBACK CAPACITANCE :C
re
(pF)
1.0
0.2
0.5
2.0
5.0
Ta
=
25
°
C
f
=
1MHz
I
E
=
0A
Cob
Cre
0.1 0.2
0.5
1
2
5
10 20
50
10
COLLECTOR CURRENT : I
C
(mA)
Fig.2 Collector-emitter saturation voltage
vs. collector current
COLLECTOR SATURATION VOLTAGE :V
CE(sat)
(mV
)
100
20
50
200
500
Ta
=
25
°
C
I
C
/I
B
=
5
-
0.1
-
0.2
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
100
EMITTER CURRENT : I
E
(mA)
Fig.4 Gain bandwidth product vs. emitter current
TRANSITION FREQUENCY : f
T
(MHz)
1000
200
500
2000
5000
Ta
=
25
°
C
V
CE
=
10V
0.1
0.2
0.5
1
2
5
10
0
FREQUENCY : f (GHz)
Fig.6 Insertion gain vs. frequency
INSERTION GAIN : IS
21el
2
(dB)
5
10
15
20
25
Ta
=
25
°
C
V
CE
=
10V
I
C
=
10mA
0.1 0.2
0.5
1
2
5
10 20
50
1
COLLECTOR CURRENT : I
C
(mA)
Fig.5 Collector to base time constance
vs. collector current
COLLECTOR TO BASE TIME CONSTANT : C
c
rbb' (p
s)
10
2
5
20
50
Ta
=
25
°
C
V
CE
=
10V
f
=
31.8MHz
COLLECTOR CURRENT : Ic (mA)
Fig.7 Insertion gain vs. collector current
INSERTION GAIN : IS
21el
2
(dB)
0.5
1
2
5
10
20
50
0
5
10
15
20
25
Ta
=
25
°
C
V
CE
=
12V
f
=
200MHz
0
2
4
6
8
10
12
0
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.8 Insertion gain vs. collector voltage
INSERTION GAIN : IS
21el
2
(dB)
5
10
15
20
25
30
Ta
=
25
°
C
I
C
=
2mA
f
=
200MHz
0.1 0.2
0.5
1
2
5
10 20
50
0
COLLECTOR CURRENT : I
C
(mA)
Fig.9 Noise factor vs. collector current
NOISE FIGURE : NF(dB)
10
20
Ta
=
25
°
C
V
CE
=
12V
f
=
200MHz
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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whatsoever nature in the event of any such infringement, or arising from or connected with or related
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About Export Control Order in Japan
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