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Part Number RSX051VA-30

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RSX051VA-30
Diodes
Rev.A
1/2
Shottky barrier diode
RSX051VA-30

Application
General rectification.

Features
1) Small power mold type. (TUMD2 (1913) )
2) High reliability.
3) Low V
F
/ Low I
R
. (0.35V at 0.7A / 40
µ
A at 30V)

Structure
Silicon Epitaxial Planer
External dimensions (Unit : mm)
ROHM :
EIAJ :
-
JEDEC :
0.8
±
0.05
2.5
±
0.2
1.9
±
0.1
1.3
±
0.1
CATHODE MARK
1.45
±
0.1
0.17
±
0.1
0.05
0.6
±
0.2
0.1
0.4
±
0.1
P
Absolute maximum ratings (Ta=25
°
C)
Parameter
V
V
RM
Symbol
30
V
V
R
30
A
I
O
0.5
A
5
I
FSM
150
Tj
-
40 to 150
Tstg
°
C
°
C
Limits
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz / 1cyc.)
Junction temperature
Storage temperature

Electrical characteristics (Ta=25
°
C)
Forward voltage
Reverse current
Capacitance between terminals
V
F1
I
R2
C
T
0.35
40
30
0.39
200
-
V
µ
A
pF
I
F
=
0.5A
V
R
=
30V
V
R
=
10V, f
=
1MHz
Parameter
Symbol
Typ.
-
-
-
Min.
Max.
Unit
Conditions














RSX051VA-30
Diodes
Rev.A
2/2
Electrical characteristic curves (Ta=25
°
C)
Fig.1 Forward Temperature
Characteristics
0
500
400
300
200
100
FORWARD VOLTAGE : V
F
(mV)
1
10
100
FORWARD CURRENT : I
F
(mA)
1000
Ta
=
150
°
C
Ta
=
125
°
C
Ta
=
75
°
C
Ta
=
25
°
C
Fig.2 Reverse Temperature
Characteristics
0
30
Fig.3 Capacitance Between
Terminals Characteristics
0
3
20
10
REVERSE VOLTAGE : V
R
(V)
10
100
TERMINAL CAPACITANCE : C
T
(pF)
1000
0
f
=
1MHz
Ta
=
25
°
C
20
10
REVERSE VOLTAGE : V
R
(V)
1
10
100
1000
10000
REVERSE CURRENT : I
R
(
µ
A)
100000
Ta
=
75
°
C
Ta
=
25
°
C
Ta
=
125
°
C
Ta
=
150
°
C



0.1
1000
100
10
1
It (s)
1
10
100
(j-a) (
°
C
/ W)
1000
Fig.4
TUMD2
Rth (j-a)
=
145
°
C / W
When mounted on a glass epoxy board.
Fig.5 Derating Curve (I
O
-Ta)
AMBIENT TEMPERATURE : Ta (
°
C)
0.0
0.2
0.4
0.6
0.8
1.0
AVERAGE RECTIFIED FOWARD CURRENT : I
O
(A)
1.2
Fig.5 Derating Curve (I
O
-Ta)
DC
0A
0V
I
O
V
R
T
t
D
=
t / T
V
R
=
15V
Tj
=
150
°
C
D
=
1 / 2
Sin (
=
180)
0
150
125
100
75
50
25
Fig.6 Derating Curve (I
O
-Tc)
0
150
125
100
75
50
25
CASE TEMPERATURE : Tc (
°
C)
0.0
0.2
0.4
0.6
0.8
1.0
AVERAGE RECTIFIED FOWARD CURRENT : I
O
(A)
1.2
D
=
1 / 2
DC
Sin (
=
180)
0A
0V
I
O
V
R
T
t
D
=
t / T
V
R
=
15V
Tj
=
150
°
C



1
10
100
0
10
I
FSM
(A)
20
N (Cyc)
Fig.7
1cyc.
8.3ms 8.3ms
Ta
=
25
°
C
0
5
10
15
20
25
ESD
(kV)
30
Fig.8 ESD
100pF
1.5k
200pF
0
Ta
=
25
°
C
1puls
Humanbody Model
Machine Model
30kV Over
Appendix
Appendix1-Rev1.1


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