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Part Number IMH22

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IMH22
Transistors
1/3
Dual digital transistors
IMH22


Features
In addition to the features of regular digital transistors.
1) Low saturation voltage, typically
V
CE (sat)
=40mV at I
C
/ I
B
=50mA / 2.5mA, makes these
transistors ideal for muting circuits.
2) These transistors can be used at high current levels,
I
C
=600mA.
3) Two DTC663E chips in a SMT package.

Structure
NPN digital transistor
(Built-in resistor type)
External dimensions (Unit : mm)
Each lead has same dimensions
Abbreviated symbol : H22
SMT6
( 6
)
( 5
)
( 4
)
0.3Min.
0.15
0.3
1.1
0.8
( 3
)
2.8
1.6
1.9
2.9
0.95
( 2
)
0.95
( 1
)
1pin mark

Equivalent circuit
R
1
(4)
(5)
(6)
(3)
(2)
(1)
R
1
R
2
R
2
R
1
=
6.8k
R
2
=
6.8k

Absolute maximum ratings (Ta=25
°
C)
Parameter
Symbol
V
CC
V
IN
Tstg
Limits
20
-
20 to
+
20
-
55 to
+
150
Unit
V
V
°
C
°
C
Supply voltage
Input voltage
Storage temperature
Output current
Power dissipation
I
C
Pd
600
V
mW
200mW per element must not be exceeded.
Tj
150
Junction temperature
300(TOTAL)







IMH22
Transistor
2/3
Electrical characteristics (Ta=25
°
C)
Parameter
Input voltage
Symbol
Min.
Typ. Max.
Unit
Conditions
V
I(OFF)
-
-
0.5
V
V
CC
=
5V , I
O
=100
µ
A
V
I(ON)
2
-
-
V
O
=
0.3V , I
O
=10mA
I
O
/I
I
=
50mA/2.5mA
V
I
=
5V
V
CC
=
20V , V
I
=
0V
-
V
O
=
5V , I
O
=50mA
V
CE
=
10V, I
E
= -
50mA, f
=
100MHz
V
I
=
5V, R
L
=
1k
, f
=
1kHz
Output voltage
V
O(ON)
-
-
150
mV
Input current
I
I
-
-
1.3
mA
Output current
I
O(OFF)
-
-
0.5
µ
A
Input ersistance
R
1
4.76
6.8
8.84
k
DC current gain
G
1
250
-
-
-
-
Resistance ratio
R
2
/R
1
0.8
1
1.2
-
Transition frequency
f
T
-
150
-
MHz
Output "ON" resistance
R
on
-
0.9
-
Transition frequency of the device.

Packaging specifications and h
FE
Packaging type
Code
Taping
Package
Basic ordering unit (pieces)
SMT6
IMH22
T110
3000
Type

Electrical characteristic curves
COLLECTOR CURRENT : Ic (mA)
INPUT VOLTAGE : V
i (on)
(mA)
Fig.1 Input voltage vs. output current
(ON characteristics)
10
100
1000
10000
100000
1
10
100
1000
V
=
0.3V
Ta
= -
40
°
C
100
°
C
25
°
C
INPUT VOLTAGE (mV)
OUTPUT CURRENT : Io (mA)
Fig.2 Output current vs. input voltage
(OFF characteristics)
0.001
0.01
0.1
1
10
0
500
1000
1500
2000
2500
3000
V
=
5V
Ta=100
°
C
25
°
C
-
40
°
C
100
1000
10000
0.1
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
DC CURRENT GAIN : h
FE
V
CE
=
5V
Fig.3 DC current gain
vs. output current characteristics
Ta
=
100
°
C
Ta
=
25
°
C
Ta
= -
40
°
C
1
10
100
1000
10000
0.1
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
Fig.4 Output voltage
vs. output curent characteristics
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(mV)
Ta
=
100
°
C
Ta
=
25
°
C
Ta
= -
40
°
C
0.1
1
10
100
1000
0.1
1
10
100
INPUT VOLTAGE : VI (V)
ON RESISTANCE : R
on
(
)
Fig.5 "ON" characteristics
vs. input voltage characteristics
Ta
=
25
°
C
f
=
1kHz
R
L
=
1k
IMH22
Transistor
3/3
R
on
measurement circuit
Fig.4 Output "ON" resistance (R
on
)
measurement circuit
v
0
v
0
v
i
-
v
0
v
I
v
i
100mV
(rms)
f=1kHz
Output
Input
R
L
=1k
R
on
=
×
R
L
V
Appendix
Appendix1-Rev1.1


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