EML12 / UML12N
Transistors
Rev.A 1/4
General purpose transistor
(isolated transistor and diode)
EML12 / UML12N
2SC4617and RB521S-30 are housed independently in a EMT5 or UMT5 package.
Applications
DC / DC converter
Motor driver
Features
1) Tr : Low V
CE(sat)
Di : Low V
F
2) Small package
Structure
NPN Silicon epitaxial planar transistor
Schottky barrier diode
The following characteristics apply to both Di1 and Tr2.
Equivalent circuit (EML12 / UML12N)
Tr2
Di1
(1)
(2)
(3)
(4)
(5)
Packaging specifications
Type
EML12
EMT5
L12
T2R
8000
UML12N
UMT5
L12
TR
3000
Package
Marking
Code
Basic ordering unit (pieces)
External dimensions (Unit : mm)
Abbreviated symbol : L12
Each lead has same dimensions
Abbreviated symbol : L12
Each lead has same dimensions
ROHM : EMT5
UMT5
EMT5
ROHM : UMT5
EIAJ : SC-88A
0.9
0.15
0.1Min.
0.7
2.1
1.3
0.65
2.0
0.2
1.25
0.65
(4)
(1)
(5)
(2) (3)
1pin mark
0.22
1.2
1.6
(1) (2) (3)
(5) (4)
0.13
0.5
0.5
0.5
1.0
1.6
1pin mark
EML12 / UML12N
Transistors
Rev.A 2/4
Absolute maximum ratings (Ta=25
°
C)
Di1
Parameter
Symbol
I
O
I
FSM
V
R
Tj
Limits
200
1
30
125
Unit
mA
A
V
°
C
Average revtified forward current
Forward current surge peak (60Hz, 1
)
Reverse voltage (DC)
Junction temperature
Tr2
Parameter
Symbol
Limits
Unit
V
CBO
60
V
50
V
V
V
CEO
V
EBO
7
I
C
mA
150
Tj
150
°
C
P
D
120
mW
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Power dissipation
Each terminal mount on a recommended.
Di1 /
DTr2
Parameter
Symbol
Limits
Unit
Tstg
-
55 to +125
°
C
P
d
150
mW
Storage temperature
Power dissipation
Each terminal mount on a recommended.
Electrical characteristics (Ta=25
°
C)
Di1
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
F
-
0.40
0.50
V
I
F
=
200mA
Forward voltage
Reverse current
I
R
-
4.0
30
µ
A
V
R
=
10V
Tr2
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE (sat)
Cob
Min.
60
50
7
-
-
180
-
-
-
-
-
-
-
-
-
2
-
-
-
0.1
0.1
390
0.4
3.5
V
I
C
=50
µ
A
I
C
=1mA
I
E
=50
µ
A
V
CB
=60V
V
EB
=7V
V
CE
=6V, I
C
=1mA
I
C
/I
B
=50mA/5mA
V
V
µ
A
µ
A
-
V
PF
Typ. Max. Unit
Conditions
f
T
-
180
-
V
CE
=12V, I
E
=
-
2mA, f
=100MHz
V
CB
=12V, I
E
=0A, f=1MHz
MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Collector-emitter saturation voltage
Output capacitance
EML12 / UML12N
Transistors
Rev.A 3/4
Electrical characteristic curves
Di1
0.01
0.1
1
10
100
1000
10000
100000
0
10
20
30
CA
PACITAN
C
E B
E
TWEE
N
TERMINALS:Ct(
p
F)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
1
10
100
0
5
10
15
20
f=1MHz
Ta=125
Ta=75
Ta=25
Ta=-25
R
E
VE
RS
E
C
U
RRE
NT:
I
R(u
A
)
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGEVF(mV)
VF-IF CHARACTERISTICS
FO
RW
AR
D
C
U
RR
EN
T
:
I
F
(
m
A
)
0.001
1
Tr2
0
0.1
0.2
0.5
2
20
50
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
5
10
V
CE
=
6V
COLLECTOR CURRENT : I
C
(
mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
25°C
-
55°C
Ta=100°C
0
20
40
60
80
100
0.4
0.8
1.2
1.6
2.0
0
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
0.05mA
0.10mA
0.15mA
0.25mA
0.30mA
0.35mA
0.20mA
Ta=25°C
I
B
=0A
0.40mA
0.50mA
0.45mA
Fig.2 Grounded emitter output
characteristics ( I )
0
0
2
8
10
4
8
12
16
4
6
20
I
B
=0A
Ta=25°C
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
3
µ
A
6
µ
A
9
µ
A
12
µ
A
15
µ
A
18
µ
A
21
µ
A
24
µ
A
27
µ
A
30
µ
A
Fig.3 Grounded emitter output
characteristics ( II )
0.2
20
10
0.5
1
2
5
10 20
50 100 200
50
100
200
500
V
CE
=5V
3V
1V
Ta=25°C
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector
current ( I )
0.2
0.5
1
2
5
10 20
50 100 200
20
10
50
100
200
500
25°C
-
55°C
Ta=100°C
V
CE
=
5V
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs. collector
current ( II )
0.2
0.5
1
2
5
10
20
50 100 200
0.01
0.02
0.05
0.1
0.2
0.5
I
C
/I
B
=50
20
10
Ta=25°C
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(
V
)
COLLECTOR CURRENT : I
C
(mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current
0.01
0.1
1
10
100
000
0
100
200
300
400
500
Ta=125
Ta=75
Ta=25
Ta=-25
EML12 / UML12N
Transistors
Rev.A
4/4
0.2
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V
)
COLLECTOR CURRENT : I
C
(mA)
0.01
0.02
0.05
0.1
0.2
0.5
0.5
1
2
5
10
20
50 100 200
I
C
/I
B
=50
20
10
Ta=25°C
Fig.7 Collector-emitter saturation
voltage vs. collector current ( I )
0.2
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V
)
COLLECTOR CURRENT : I
C
(mA)
0.01
0.02
0.05
0.1
0.2
0.5
0.5
1
2
5
10
20
50 100 200
I
C
/I
B
=10
Ta=100°C
25°C
-
55°C
Fig.8 Collector-emitter saturation
voltage vs. collector current ( II )
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
0.2
0.01
0.02
0.05
0.1
0.2
0.5
0.5
1
2
5
10
20
50 100
I
C
/I
B
=50
Ta=100°C
25°C
-
55°C
Fig.9 Collector-emitter saturation
voltage vs. collector current ( III )
50
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
-
100
100
200
500
Ta=25°C
V
CE
=6V
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.10 Gain bandwidth product vs.
emitter current
0.2
0.5
1
2
5
10
20
50
1
2
5
10
20
Cib
Cob
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
EMITTER INPUT CAPACITANCE
: Cib
(pF)
Fig.11 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Ta=25°C
f
=1MHz
I
E
=0A
I
C
=0A
-
0.2
-
0.5
-
1
-
2
-
5
-
10
10
20
50
100
200
EMITTER CURRENT : I
E
(mA)
Fig.12 Base-collector time constant vs.
emitter current
BASE COLLECTOR TIME CONSTANT : Cc r
bb'
(p
s)
Ta=25
°C
f=32MH
Z
V
CB
=6V
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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