Rev.1.00, Aug.20.2004, page 1 of 6
FS5AS-10A
High-Speed Switching Use
Nch Power MOS FET
REJ03G0246-0100
Preliminary
Rev.1.00
Aug.20.2004
Features
·
Drive voltage : 10 V
·
V
DSS
: 500 V
·
r
DS(ON) (max)
: 1.5
·
I
D
: 5 A
Outline
MP-3A
1
1
3
3
2, 4
2
4
1. Gate
2. Drain
3. Source
4. Drain
Applications
SMPS, Lamp Ballast, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Symbol
Ratings
Unit
Conditions
Drain-source voltage
V
DSS
500
V
V
GS
= 0 V
Gate-source voltage
V
GSS
±
30
V
V
DS
= 0 V
Drain current
I
D
5
A
Drain current (Pulsed)
I
DM
15
A
Avalanche current (Pulsed)
I
DA
5
A
L = 200
µ
H
Maximum power dissipation
P
D
65
W
Channel temperature
Tch
55 to +150
°
C
Storage temperature
Tstg
55 to +150
°
C
Mass
--
0.32
g
Typical value
FS5AS-10A
Rev.1.00, Aug.20.2004, page 2 of 6
Electrical Characteristics
(Tch = 25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test conditions
Drain-source breakdown voltage
V
(BR)DSS
500
--
--
V
I
D
= 1 mA, V
GS
= 0 V
Gate-source breakdown voltage
V
(BR)GSS
±
30
--
--
V
I
G
=
±
100
µ
A, V
DS
= 0 V
Gate-source leakage current
I
GSS
--
--
±
10
µ
A
V
GS
=
±
25 V, V
DS
= 0 V
Drain-source leakage current
I
DSS
--
--
1
mA
V
DS
= 500 V, V
GS
= 0 V
Gate-source threshold voltage
V
GS(th)
2.5
3.0
3.5
V
I
D
= 1 mA, V
DS
= 10 V
Drain-source on-state resistance
r
DS(ON)
--
1.2
1.5
I
D
= 2 A, V
GS
= 10 V
Drain-source on-state voltage
V
DS(ON)
--
2.4
3.0
V
I
D
= 2 A, V
GS
= 10 V
Forward transfer admittance
| y
fs
|
2.7
4.5
--
S
I
D
= 2 A, V
DS
= 10 V
Input capacitance
Ciss
--
700
--
pF
Output capacitance
Coss
--
70
--
pF
Reverse transfer capacitance
Crss
--
15
--
pF
V
DS
= 25 V, V
GS
= 10 V,
f = 1MHz
Turn-on delay time
t
d(on)
--
15
--
ns
Rise time
t
r
--
20
--
ns
Turn-off delay time
t
d(off)
--
90
--
ns
Fall time
t
f
--
30
--
ns
V
DD
= 200 V, I
D
= 2 A,
V
GS
= 10 V,
R
GEN
= R
GS
= 50
Source-drain voltage
V
SD
--
1.5
2.0
V
I
S
= 2 A, V
GS
= 0 V
Thermal resistance
Rth(ch-c)
--
--
1.92
°
C/W
Channel to case
FS5AS-10A
Rev.1.00, Aug.20.2004, page 3 of 6
Performance Curves
Drain Power Dissipation Derating Curve
Case Temperature Tc (°C)
Drain Power Dissipation P
D
(W)
Maximum Safe Operating Area
Drain-Source Voltage V
DS
(V)
Drain Current I
D
(A)
0
30
20
10
40
50
60
70
0
200
50
100
150
10
2
2
3
5
7
10
1
2
3
5
7
10
0
10
1
2
3
5
7
10
0
2 3
710
1
5
2 3
710
2
5
2 3
710
3
5
tw = 10
µs
100
µs
1ms
DC
Tc = 25°C
Single Pulse
Output Characteristics (Typical)
Output Characteristics (Typical)
Drain Current I
D
(A)
Drain-Source Voltage V
DS
(V)
Drain Current I
D
(A)
Drain-Source Voltage V
DS
(V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
Gate-Source Voltage V
GS
(V)
Drain-Source On-State Voltage V
DS(ON)
(V)
On-State Resistance vs.
Drain Current (Typical)
Drain Current I
D
(A)
Drain-Source On-State Resistance r
DS(ON)
(
)
0
2
4
6
8
10
0
4
8
12
16
20
5V
4V
P
D
= 65W
0
1
2
3
4
5
0
2
4
6
8
10
V
GS
= 20V
V
GS
= 20V
10V
6V
10V
6V
4V
5V
0
4
8
12
16
20
0
4
8
12
16
20
5A
I
D
= 8A
0
0.8
1.6
2.4
3.2
4.0
10
1
2
10
0
3 5 7
2
10
1
3 5 7
2
10
2
3 5 7
V
GS
= 10V
20V
3A
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
FS5AS-10A
Rev.1.00, Aug.20.2004, page 4 of 6
Transfer Characteristics (Typical)
Gate-Source Voltage V
GS
(V)
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current (Typical)
Drain Current I
D
(A)
Forward Transfer Admittance | y
fs
| (S)
0
2
4
6
8
10
0
4
8
12
16
20
10
1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
2
3
4
5
7
10
2
10
1
10
0
2 3
3
5 7
7 10
1
2
4
4 5
Tc = 125°C
25°C
Tc = 25°C
V
DS
= 10V
Pulse Test
V
DS
= 10V
Pulse Test
Switching Characteristics (Typical)
Drain-Source Voltage V
DS
(V)
Capacitance vs.
Drain-Source Voltage (Typical)
Drain Current I
D
(A)
Capacitance (pF)
Switching Time (ns)
Gate-Source Voltage vs.
Gate Charge (Typical)
Gate Charge Qg (nC)
Gate-Source Voltage V
GS
(V)
Source-Drain Diode Forward
Characteristics (Typical)
Source-Drain Voltage V
SD
(V)
Source Current I
S
(A)
10
1
10
2
2
3
5
7
2
3
5
7
10
3
2
3
5
7
2
10
0
3
7
10
1
5
2
3
7
5
2
3
7
5
2
10
2
3
2
10
1
5
7
10
2
2
3
4
5
2
3
4
5
7
td(off)
td(on)
tf
tr
10
1
10
0
2 3
3
5 7
7 10
1
2
4
4 5
Ciss
Coss
Crss
Tch = 25°C
f = 1MHz
V
GS
= 0V
Tch = 25°C
V
DD
= 200V
V
GS
= 10V
R
GEN
= R
GS
= 50
0
4
8
12
16
20
0
8
16
24
32
40
400V
200V
0
2
4
6
8
10
0
0.8
1.6
2.4
3.2
4.0
V
DS
= 100V
Tch = 25°C
I
D
= 5A
25°C
75°C
Tc = 125°C
V
GS
= 0V
Pulse Test
75°C
FS5AS-10A
Rev.1.00, Aug.20.2004, page 5 of 6
Channel Temperature Tch (°C)
Threshold Voltage vs.
Channel Temperature (Typical)
Gate-Source Threshold Voltage V
GS(th)
(V)
On-State Resistance vs.
Channel Temperature (Typical)
Channel Temperature Tch (°C)
Drain-Source On-State Resistance r
DS(ON)
(t°C)
Drain-Source On-State Resistance r
DS(ON)
(25°C)
10
1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
50
0
50
100
150
0
1.0
2.0
3.0
4.0
5.0
50
0
50
100
150
V
GS
= 10V
I
D
= 2A
Pulse Test
V
DS
= 10V
I
D
= 1mA
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
Drain-Source Breakdown Voltage V
(BR)DSS
(t°C)
Drain-Source Breakdown Voltage V
(BR)DSS
(25°C)
Transient Thermal Impedance Characteristics
Pulse Width tw (s)
Transient Thermal Impedance Zth(ch-c) (°C/W)
Switching Time Measurement Circuit
Switching Waveform
0.4
0.6
0.8
1.0
1.2
1.4
50
0
50
100
150
10
1
7
5
3
2
10
0
7
5
3
2
2 3 57
2 3 57
2 3 57 10
-1
2 3 57 10
0
2 3 5710
1
10
4
10
3
10
2
10
1
0.5
0.2
D = 1.0
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
90%
10%
tf
Vin Monitor
D.U.T.
R
L
V
DD
Vout
Monitor
R
GEN
R
GS
V
GS
= 0V
I
D
= 1mA
P
DM
tw
D =
T
tw
T
Single Pulse
0.1
0.05
0.02
0.01
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