1. ANODE
2. NC
3. CATHODE
3
2
-
T
O
S
3
2
-
T
O
S
3
2
-
T
O
S
3
2
-
T
O
S
3
2
-
T
O
S
(1)
(3)
(2)
(UNITS: mm)
RECTRON USA
1315 John Reed Court, Industry, CA 91745
Tel: (626) 333-3802 Fax: (626) 330-6296
www.rectron.com
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SD4150
RECTRON
SURFACE MOUNT 1N4150 DIODE
Absolute Maximum Ratings (Ta=25
°
C)
ITEMS
SYMBOL
RATINGS
UNIT
Reverse
Voltage
VR
50
V
Reverse
Recovery Time
trr
6
ns
ForwardVoltage
@ If = 50 mA
VF
0.86
V
ForwardCurrent
IF
300
mA
Junction Temp.
Tj
-55 to 150
°
C
Storage Temp.
Tstg
-55 to 150
°
C
Mechanical Data
ITEMS
MATERIALS
Package
SOT-23
Lead Frame
42 Alloy
Lead Finish
Solder Plating
Bond Wire
Au
Mold Resin
Epoxy
Chip
Silicon
Electrical Characteristics (Ta=25
°
C)
RATINGS
SYMBOL
RATINGS
UNIT
Reverse Voltage IR= 100uA
VR
50
V
Repetitive Peak Reverse Voltage
VRRM
75
V
Repetitive Peak Forward Current
IFRM
600
mA
Forward Voltage
IF= 1mA
IF= 10mA
IF= 50mA
IF= 100mA
IF= 200mA
VF
0.62
0.74
0.86
0.92
1.00
V
Reverse Current
VR= 50V
VR= 50V (Tj= 150
°
C)
IR
0.10
100
uA
Junction Capacitance VR = 0 V, f = 1MHz
Cj
2.5
pF
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