Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
The RMWD24001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 26.5 GHz Driver Amplifier for use in point
to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In
conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 23 and 26 GHz
transmit/receive chipset. The RMWD24001 utilizes Raytheon's 0.25µm power PHEMT process and is sufficiently
versatile to serve in a variety of driver amplifier applications.
Description
Absolute
Maximum
Ratings
Electrical
Characteristics
(At 25°C), 50
system,
Vd=+4 V, Quiescent
Current Idq=240 mA
4 mil substrate
Small-signal gain 23 dB (typ.)
1dB compressed Pout 17 dBm (typ.)
Voltage detector included to monitor Pout
Chip size 2.85 mm x 1.2 mm
Features
Note:
1. Typical range of the negative gate voltages is -0.7 to -0.1V to set typical Idq of 240 mA.
Parameter
Min
Typ
Max
Unit
Drain Current
265
mA
at 1dB Compression
Input Return Loss
10
dB
(Pin=-12 dBm)
Output Return Loss
12
dB
(Pin=-12 dBm)
OIP3
TBD
dBm
Noise Figure
TBD
dB
Detector Voltage
TBD
V
Parameter
Symbol
Value
Unit
Positive DC voltage (+4 V Typical)
Vd
+6
Volts
Negative DC voltage
Vg
-2
Volts
Simultaneous (Vd - Vg)
Vdg
8
Volts
Positive DC Current
I
D
345
mA
RF Input Power (from 50
source)
P
IN
+8
dBm
Operating Baseplate Temperature
T
C
-30 to +85
°C
Storage Temperature Range
T
stg
-55 to +125
°C
Thermal Resistance
R
JC
42
°C/W
(Channel to Backside)
Parameter
Min
Typ
Max
Unit
Frequency Range
21
26.5
GHz
Gate Supply Voltage (Vg)
1
-0.4
V
Gain Small Signal
20
23
dB
at Pin=-12 dBm
Gain Variation vs. Frequency
3
dB
Gain at 1dB Compression
22
dB
Power Output at P1dB
13
17
dBm
(Pin=-6 dBm)
Drain Current
240
mA
at Pin=-12 dBm
RMWD24001
21-26.5 GHz Driver Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Figure 1
Functional
Block Diagram
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding
to a typically 2 mil between the chip and the substrate material.
Application
Information
Drain Supply
Vd1
Drain Supply
Vd2
MMIC Chip
RF OUT
RF IN
Gate Supply
Vg1&4
Ground
(Back of Chip)
Output Power
Detector Voltage
Vdet*
*Note: Detector delivers 0.1 V DC into 3k
load resistor for >+7 dBm output power. If output power level detection is not desired, do not make
connection to detector bond pad.
Drain Supply
Vd3
Drain Supply
Vd4
Gate Supply
Vg2&3
0.0
0.0
0.0
0.0
2.85
2.85
1.2
1.2
0.768
0.6135
0.459
0.820
0.6655
0.511
0.921
2.119
0.2485
1.1215
1.642
2.352
Figure 2
Chip Layout and
Bond Pad Locations
(Chip Size=2.85 mm
x 1.2 mm. Back of
Chip is RF and DC
Ground)0
Dimensions in mm
RMWD24001
21-26.5 GHz Driver Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 3
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
MMIC Chip
RF OUT
RF IN
Figure 3
Recommended
Application Schematic
Circuit Diagram
Drain Supply
Vd=+4 V
Gate Supply
Vg
Output Power
Detector Voltage
Vdet
Ground
(Back of Chip)
100pF
L
L
L
100pF
100pF
10,000pF
L
L
100pF
100pF
L
L
L
L
L = Bond Wire Inductance
100pF
L
L
R = 3k Ohms
10,000pF
L
L
L
L
RMWD24001
21-26.5 GHz Driver Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 4
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Note:
Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
Figure 4
Recommended
Assembly Diagram
100pF
10,000pF
100pF
RF
Input
RF
Output
5mil Thick
Alumina
50-Ohm
5 mil Thick
Alumina
50-Ohm
2 mil Gap
L< 0.015"
(4 Places)
Die-Attach
80Au/20Sn
100pF
Vg
(Negative)
100pF
100pF
10,000pF
Vd
(Positive)
3K Ohm
Detector
Voltage
100pF
CAUTION:LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Recommended
Procedure
for Biasing and
Operation
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the ground
of the chip carrier. Slowly apply negative gate
bias supply voltage of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply voltage
of +5 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=240 mA.
Step 5: After the bias condition is established, the RF
input signal may now be applied at the
appropriate frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power.
(ii) Turn down and off drain voltage (Vd).
(iii) Turn down and off gate bias voltage(Vg).
RMWD24001
21-26.5 GHz Driver Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 5
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Performance
Data
RMWD24001 26 GHz Driver Amplifier. Typical On-Wafer Performance.
I
DQ
= 210 mA V
DD
= 4 V
0
2
4
6
8
10
12
14
16
18
20
22
24
26
21
21.5
22
22.5
23
23.5
24
24.5
25
25.5
26
26.5
Frequency (GHz)
S2
1
Ma
g (
d
B)
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
S1
1
an
d S
2
2
M
a
g
(
d
B
)
S11
S21
S22
RMWD24001 26 GHz Driver Typical Output Power at 1 dB Gain Compression.
Measured On-Wafer I
DQ
= 240 mA V
DD
= 4 V
10
12
14
16
18
20
21.5
22
22.5
23
23.5
24
24.5
25
25.5
26
26.5
Frequency (GHz)
Ou
p
u
t Po
we
r
(d
Bm)
Output Power at 1dB Gain Compression
RMWD24001
21-26.5 GHz Driver Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 6
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
RMWL24001 Typical Power Saturation Curves. Measurements Include 50 Ohm Test
Fixture. I
DQ
= 240 mA V
DD
= 4.0 V
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
I
nput Power (dBm)
21 GHz Pout
24 GHz Pout
26.5 GHz Pout
21 GHz Gain
24 GHz Gain
26.5 GHz Gain
O
u
t
p
ut
P
o
w
er
(
d
B
m
)
Gain Curves
Performance
Data
RMWL24001 Driver Amplifier Typical WideBand S-Parameters. Measurements Include
50 Ohm Test Fixture. I
DQ
= 240 mA V
DD
= 4.0 V
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
5
10
15
20
25
30
35
40
45
50
Frequency (GHz)
-15
-14
-13
-12
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
S
21
S
11
S22
S
11
a
nd
S
22
M
ag
(dB
)
S
21
M
ag
(
dB
)
RMWD24001
21-26.5 GHz Driver Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 7
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
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362 Lowell Street
Andover, MA 01810
978-684-8628
fax: 978-684-8646
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rrfc.raytheon.com
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