FAST RECOVERY DIODE
ARF648
Repetitive voltage up to
2500
V
Mean forward current
2510
A
Surge current
30
kA
FINAL SPECIFICATION
feb 00 - ISSUE : 01
Symbol
Characteristic
Conditions
Tj
[°C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
150
2500
V
V
RSM
Non-repetitive peak reverse voltage
150
2600
V
I
RRM
Repetitive peak reverse current
V=VRRM
150
100
mA
CONDUCTING
I
F (AV)
Mean forward current
180° sin ,50 Hz, Th=55°C, double side cooled
2510
A
I
F (AV)
Mean forward current
180° square,50 Hz,Th=55°C,double side cooled
2570
A
I
FSM
Surge forward current
Sine wave, 10 ms
150
30
kA
I² t
I² t
reapplied reverse voltage up to 50% VRSM
4500 x1E3
A²s
V
FM
Forward voltage
Forward current =1500 A
25
1,4
V
V
F(TO)
Threshold voltage
150
0,85
V
r
F
Forward slope resistance
150
0,300
mohm
SWITCHING
t rr
Reverse recovery time
I F = 1000 A
5,0
µs
Q rr
Reverse recovery charge
di/dt=
250 A/µs
150
1000
µC
I rr
Peak reverse recovery current
VR =
50 V
600
A
s
Softness (s-factor), min
0,5
V
FR
Peak forward recovery
di/dt=
100 A/µs
150
4
V
MOUNTING
R
th(j-h)
Thermal impedance
Junction to heatsink, double side cooled
14
°C/kW
T
j
Operating junction temperature
-30 / 150
°C
F
Mounting force
35.0 / 40.0
kN
Mass
850
g
ORDERING INFORMATION : ARF648 S 25
standard specification
VRRM/100
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
ARF648 FAST RECOVERY DIODE
FINAL SPECIFICATION feb 00 - ISSUE : 01
Distributed by
FORWARD CHARACTERISTIC
Tj = 150 °C
0
1000
2000
3000
4000
5000
6000
7000
8000
0,6
1,1
1,6
2,1
2,6
3,1
3,6
Forward Voltage [V]
Forward Current [A]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
0,0
2,0
4,0
6,0
8,0
10,0
12,0
14,0
16,0
0,001
0,01
0,1
1
10
100
t[s]
Zth j-h [°C/kW]
SURGE CHARACTERISTIC
Tj = 150 °C
0
5
10
15
20
25
30
35
1
10
100
n° cycles
ITSM [kA]
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement ANSALDO reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
ANSALDO
ARF648 FAST RECOVERY DIODE
FINAL SPECIFICATION feb 00 - ISSUE : 01
DISSIPATION CHARACTERISTICS
SQUARE WAVE
SINE WAVE
DC
180°
0
1000
2000
3000
4000
5000
6000
7000
0
500
1000
1500
2000
2500
3000
3500
4000
Mean Forward Current [A]
Power Dissipation [W]
120
°
90°
30°
60°
ANSALDO
120°
0
1000
2000
3000
4000
5000
6000
7000
8000
0
500
1000
1500
2000
2500
3000
3500
4000
Mean Forward Current [A]
Power Dissipation [W]
90°
30°
180
°
60°
ARF648 FAST RECOVERY DIODE
FINAL SPECIFICATION feb 00 - ISSUE : 01
SWITCHING CHARACTERISTICS
ANSALDO
REVERSE RECOVERY CHARGE
Tj=150°C
0
200
400
600
800
1000
1200
1400
0
100
200
300
400
di/dt [A/µs]
Qrr [µC]
500 A
1000 A
2000 A
REVERSE RECOVERY CURRENT
Tj=150°C
0
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
0
100
200
300
400
di/dt [A/µs]
Irr [A]
500 A
1000A
2000
A
FORWARD RECOVERY VOLTAGE
0
5
10
15
20
25
30
0
200
400
600
800
1000
1200
di/dt [A/µs]
VFR [V]
Tj = 150 °C
Tj = 25 °C
I
F
V
FR
V
F
ta
ta = Irr / (di/dt) tb = trr - ta
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr (Qrr - Irr ta /
2 )
Irr
Vr
tb
I
F
d i/d t
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