RECTIFIER DIODE
AR679
Repetitive voltage up to
4500
V
Mean forward current
3025
A
Surge current
30
kA
TARGET SPECIFICATION
nov 02 - ISSUE : 03
Symbol
Characteristic
Conditions
Tj
[°C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
150
4500
V
V
RSM
Non-repetitive peak reverse voltage
150
4600
V
I
RRM
Repetitive peak reverse current
V=VRRM
150
150
mA
CONDUCTING
I
F (AV)
Mean forward current
180° sin ,50 Hz, Th=55°C, double side cooled
3025
A
I
F (AV)
Mean forward current
180° sin ,50 Hz, Tc=85°C, double side cooled
2785
A
I
FSM
Surge forward current
Sine wave, 10 ms
150
30
kA
I² t
I² t
without reverse voltage
4500 x 1E3
A²s
V
FM
Forward voltage
Forward current =
2000 A
150
1.15
V
V
F(TO)
Threshold voltage
150
0.75
V
r
F
Forward slope resistance
150
0.200
mohm
SWITCHING
t rr
Reverse recovery time
µs
Q rr
Reverse recovery charge
150
µC
I rr
Peak reverse recovery current
A
MOUNTING
R
th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
14
°C/kW
R
th(c-h)
Thermal impedance
Case to heatsink, double side cooled
3
°C/kW
T
j
Operating junction temperature
-30 / 150
°C
F
Mounting force
35.0
/ 40.0
kN
Mass
850
g
ORDERING INFORMATION : AR679 S 45
standard specification
VRRM/100
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
AR679 RECTIFIER DIODE
TARGET SPECIFICATION nov 02 - ISSUE : 03
DISSIPATION CHARACTERISTICS
SQUARE WAVE
DC
180°
0
1000
2000
3000
4000
5000
6000
7000
8000
0
1000
2000
3000
4000
5000
I
F(AV)
[A]
P
F(AV)
[W]
90°
120°
60°
30°
DC
60°
50
60
70
80
90
100
110
120
130
140
150
0
1000
2000
3000
4000
5000
I
F(AV)
[A]
Th [°C]
90°
180°
120°
30°
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
AR679 RECTIFIER DIODE
TARGET SPECIFICATION nov 02 - ISSUE : 03
DISSIPATION CHARACTERISTICS
SINE WAVE
0
1000
2000
3000
4000
5000
6000
7000
8000
0
1000
2000
3000
4000
5000
I
F(AV)
[A]
P
F(AV)
[W]
180°
60°
90°
30°
120°
50
70
90
110
130
150
170
0
1000
2000
3000
4000
5000
I
F(AV)
[A]
Th [°C]
30°
180°
60°
120°
90°
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
AR679 RECTIFIER DIODE
TARGET SPECIFICATION nov 02 - ISSUE : 03
Distributed by
FORWARD CHARACTERISTIC
Tj = 150 °C
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
0.6
1.1
1.6
2.1
2.6
Forward Voltage [V]
Forward Current [A]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
0.001
0.01
0.1
1
10
100
t[s]
Zth j-h [°C/kW]
SURGE CHARACTERISTIC
Tj = 150 °C
0
5
10
15
20
25
30
35
1
10
100
n° cycles
ITSM [kA]
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO SpA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
Ø 6 3 max
Ø 10 1 max
9 0.5
(both sid es)
Ø 3.5 x 4
32.5± 0.5
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
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