SD150-13-003
4 Mbps
Si PIN Photodiode Chip
The SD150-13-003 chip is a silicon pin photodiode that has been
specifically developed for the price-sensitive OEM optical communication
applications, including IrDA-compatible transceivers, fiber-optic LAN,
VCSEL-based IR links, and instrumentation. Designed to be fully depleted at
low voltages, the device offers exceptionally low capacitance and fast
response. The rise and fall times have been optimized for digital transmission,
and the signal tailing, a common problem for photodiodes operating at low
bias, have been greatly reduced. Typical data transfer speeds are 1Mbps and
up to 4Mbps on selected devices.
The device features excellent quantum efficiency, exceeding 80% between
500 and 850nm, offering higher sensitivity than many comparable devices,
thus extending the effective operating range of the IrDA-enabled peripherals.
The SD150-13-003 is ideally suited for such demanding applications as IR
links for high-resolution digital cameras, scanners, portable storage devices,
personal computers and PDAs, and infrared LAN access nodes. The device can
match the speeds of USB ports, thus offering attractive alternative of
transferring large amounts of data to and from a computer at high rates without
a cable connection and making peripheral devices truly portable. Low
operating voltage makes it also a perfect choice for battery-powered
applications.
Advanced Photonix can custom assemble the SD150-13-003 into OEM
IrDA transceiver modules. Contact factory for details.
Electro-Optical Characteristics
@ +23°, V
r
= 2.5V, unless otherwise noted
Parameter Min Typ. Max.
Conditions
Dark Current
1 nA
5 nA
V
r
= 3.2V
3
nA
11
nA
V
r
= 10V
Forward Voltage
0.65 V
0.85 V
I
p
= 3mA
Breakdown
Voltage
25
V
I
r
= 10µA
Capacitance
9
pF
V
r
= 2V, f = 4MHz
Rise Time
15 ns
30ns
10-90%,
= 850nm, R
l
= 50
Fall Time
15 ns
30ns
90-10%,
= 850nm, R
l
= 50
Responsivity 0.50A/W
0.55A/W
= 850nm
Features
· 1.4mm
2
active area
· High speed
· Reduced turn-off tail
· Excellent QE
· Low bias voltage (2.5V)
· Low noise
· Low capacitance
·
Wide operating temp. range
·
Low cost
Applications
· IR links up to 4 Mbps
· Portable peripherals
· Portable instrumentation
· IR transceiver modules
API reserves the right to change specifications without notification.
Small signal response
R
l
= 50
, source: 850nm VCSEL
Rev. Mar 6, 2002
Preliminary
Spectral Responsivity @ V
b
=
2.5V, T
a
=
23°C
0
0.1
0.2
0.3
0.4
0.5
0.6
200
300
400
500
600
700
800
900
1000
1100
Wavelength (nm)
Responsivity (A/W)
Typical Performance Graphs
Mechanical Characteristics
Die Size
0.059 x 0.070 in. (1.50 x 1.50 mm)
Active Area
0.048 x 0.048 in. (1.21 x 1.21 mm)
Die Thickness
0.005 in. (0.13 mm)
Front Anode Contact
0.0051"in. (0.13mm ), Al
Front Cathode Ring Width
0.005 in., Al
Cathode Backside Contact
Au
A/R Coating
Thermal SiO
2
,
= 1465+/-50Å
Recommendations
Attachment method
conductive epoxy
Wire bonding
aluminum, gold
Absolute Maximum Ratings*
Storage Temperature
-55°C to +150°C
Operating Temperature
-40°C to +125°C
Reverse Bias Voltage
25V
*Operating beyond these limits may cause permanent damage to the device.
1240 Avenida Acaso, Camarillo, CA 93012
(805) 987-0146 Fax (805) 484-9935
www.advancedphotonix.com
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