DATA SHEET
Product specification
Supersedes data of 1999 Jun 18
File under Integrated Circuits, IC02
1999 Oct 26
INTEGRATED CIRCUITS
TDA6107Q
Triple video output amplifier
1999 Oct 26
2
Philips Semiconductors
Product specification
Triple video output amplifier
TDA6107Q
FEATURES
·
Typical bandwidth of 5.5 MHz for an output signal of
60 V (p-p)
·
High slew rate of 900 V/
µ
s
·
No external components required
·
Very simple application
·
Single supply voltage of 200 V
·
Internal reference voltage of 2.5 V
·
Fixed gain of 50
·
Black-Current Stabilization (BCS) circuit
·
Thermal protection.
GENERAL DESCRIPTION
The TDA6107Q includes three video output amplifiers in
one plastic DIL-bent-SIL 9-pin medium power (DBS9MPF)
package (SOT111-1), using high-voltage DMOS
technology, and is intended to drive the three cathodes of
a colour CRT directly. To obtain maximum performance,
the amplifier should be used with black-current control.
ORDERING INFORMATION
BLOCK DIAGRAM
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TDA6107Q
DBS9MPF
plastic DIL-bent-SIL medium power package with fin; 9 leads
SOT111-1
handbook, full pagewidth
MGK278
TDA6107Q
VDD
6
1, 2, 3
4
9, 8, 7
Voc(3),
Voc(2),
Voc(1)
5
Io(m)
Rf
MIRROR 5
DIFFERENTIAL
STAGE
VIP
REFERENCE
CURRENT
SOURCE
Ri
Vi(1),
Vi(2),
Vi(3)
Ra
3
×
3
×
CASCODE 1
CASCODE 2
MIRROR 2
1
×
MIRROR 4
MIRROR 3
MIRROR 1
THERMAL
PROTECTION
CIRCUIT
1
×
Fig.1 Block diagram (one amplifier shown).
1999 Oct 26
3
Philips Semiconductors
Product specification
Triple video output amplifier
TDA6107Q
PINNING
SYMBOL
PIN
DESCRIPTION
V
i(1)
1
inverting input 1
V
i(2)
2
inverting input 2
V
i(3)
3
inverting input 3
GND
4
ground (fin)
I
om
5
black-current measurement output
V
DD
6
supply voltage
V
oc(3)
7
cathode output 3
V
oc(2)
8
cathode output 2
V
oc(1)
9
cathode output 1
handbook, halfpage
Vi(1)
Vi(2)
Vi(3)
GND
Iom
VDD
Voc(3)
Voc(2)
Voc(1)
1
2
3
4
5
6
7
8
9
TDA6107Q
MGK277
Fig.2 Pin configuration.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages measured with respect to pin 4 (ground);
currents as specified in Fig.1; unless otherwise specified.
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices (see
"Handling MOS Devices").
QUALITY SPECIFICATION
Quality specification
"SNW-FQ-611 part D" is applicable and can be found in the "Quality reference Handbook".
The handbook can be ordered using the code 9397 750 00192.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DD
supply voltage
0
250
V
V
i
input voltage at pins 1 to 3
0
12
V
V
o(m)
measurement output voltage
0
6
V
V
o(c)
cathode output voltage
0
V
DD
V
T
stg
storage temperature
-
55
+150
°
C
T
j
junction temperature
-
20
+150
°
C
V
es
electrostatic handling
Human Body Model (HBM)
-
2000
V
Machine Model (MM)
-
300
V
1999 Oct 26
4
Philips Semiconductors
Product specification
Triple video output amplifier
TDA6107Q
THERMAL CHARACTERISTICS
Note
1. An external heatsink is necessary.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
56
K/W
R
th(j-fin)
thermal resistance from junction to fin
note 1
11
K/W
R
th(h-a)
thermal resistance from heatsink to ambient
18
K/W
Thermal protection
The internal thermal protection circuit gives a decrease of
the slew rate at high temperatures: 10% decrease at
130
°
C and 30% decrease at 145
°
C (typical values on the
spot of the thermal protection circuit).
handbook, halfpage
-
40
Ptot
(W)
0
8
6
2
0
4
40
80
160
120
Tamb (
°
C)
MBH989
(1)
(2)
Fig.3 Power derating curves.
(1) Infinite heatsink.
(2) No heatsink.
handbook, halfpage
MGK279
5 K/W
outputs
fin
thermal protection circuit
6 K/W
Fig.4 Equivalent thermal resistance network.
1999 Oct 26
5
Philips Semiconductors
Product specification
Triple video output amplifier
TDA6107Q
CHARACTERISTICS
Operating range: T
j
=
-
20 to +150
°
C; V
DD
= 180 to 210 V. Test conditions: T
amb
= 25
°
C; V
DD
= 200 V;
V
o(c1)
= V
o(c2)
= V
o(c3)
=
1
/
2
V
DD
; C
L
= 10 pF (C
L
consists of parasitic and cathode capacitance); R
th(h-a)
= 18 K/W
(measured in test circuit of Fig.8); unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
q
quiescent supply current
5.9
6.9
7.9
mA
V
ref(int)
internal reference voltage
(input stage)
-
2.5
-
V
R
i
input resistance
-
3.6
-
k
G
gain of amplifier
47.5
51.0
55.0
G
gain difference
-
2.5
0
+2.5
V
O(c)
nominal output voltage at
pins 7, 8 and 9 (DC value)
I
i
= 0
µ
A
116
129
142
V
V
O(c)(offset)
differential nominal output
offset voltage between
pins 7 and 8, 8 and 9 and
9 and 7 (DC value)
I
i
= 0
µ
A
-
0
5
V
V
o(c)(T)
output voltage temperature
drift at pins 7, 8 and 9
-
-
10
-
mV/K
V
o(c)(T)(offset)
differential output offset
voltage temperature drift
between pins 7 and 8,
8 and 9 and 7 and 9
-
0
-
mV/K
I
o(m)(offset)
offset current of measurement
output
I
o(c)
= 0
µ
A;
1.5 V < V
i
< 5.5 V;
3 V < V
o(m)
< 6 V
-
50
-
+50
µ
A
I
o(m)
/
I
o(c)
linearity of current transfer
-
100
µ
A < I
o(c)
< 100
µ
A;
1.5 V < V
i
< 5.5 V;
3 V < V
o(m)
< 6 V
0.9
1.0
1.1
at CRT discharge;
I
o(c)
= 1 mA;
1.5 V < V
i
< 5.5 V;
3 V < V
o(m)
< 5.4 V
-
1.0
-
I
o(c)(max)
maximum peak output current
(pins 7, 8 and 9)
50 V < V
o(c)
< V
DD
-
50 V
-
20
-
mA
V
o(c)(min)
minimum output voltage
(pins 7, 8 and 9)
V
i
= 7.0 V; note 1
-
-
10
V
V
o(c)(max)
maximum output voltage
(pins 7, 8 and 9)
V
i
= 1.0 V; note 1
V
DD
-
15
-
-
V
B
S
small signal bandwidth
(pins 7, 8 and 9)
V
o(c)
= 60 V (p-p)
-
5.5
-
MHz
B
L
large signal bandwidth
(pins 7, 8 and 9)
V
o(c)
= 100 V (p-p)
-
4.5
-
MHz
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