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Part Number PMN50XP

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1.
Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
1.3 Applications
1.4 Quick reference data
2.
Pinning information
PMN50XP
P-channel TrenchMOS extremely low level FET
Rev. 01 -- 23 January 2006
Product data sheet
s
Low threshold voltage
s
Low on-state losses
s
Low power DC-to-DC converters
s
Battery management
s
Load switching
s
Battery powered portable equipment
s
V
DS
-
20 V
s
I
D
-
4.8 A
s
R
DSon
60 m
s
Q
GD
= 1.3 nC (typ)
Table 1:
Pinning
Pin
Description
Simplified outline
Symbol
1, 2, 5, 6
drain (D)
SOT457 (TSOP6)
3
gate (G)
4
source (S)
1
3
2
4
5
6
S
D
G
003aaa671
PMN50XP_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 23 January 2006
2 of 12
Philips Semiconductors
PMN50XP
P-channel TrenchMOS extremely low level FET
3.
Ordering information
4.
Limiting values
Table 2:
Ordering information
Type number
Package
Name
Description
Version
PMN50XP
TSOP6
plastic surface mounted package (TSOP6); 6 leads
SOT457
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
V
DS
drain-source voltage
25
°
C
T
j
150
°
C
-
-
20
V
V
DGR
drain-gate voltage (DC)
25
°
C
T
j
150
°
C; R
GS
= 20 k
-
-
20
V
V
GS
gate-source voltage
-
±
12
V
I
D
drain current
T
sp
= 25
°
C; V
GS
=
-
4.5 V; see
Figure 2
and
3
-
-
4.8
A
T
sp
= 100
°
C; V
GS
=
-
4.5 V; see
Figure 2
-
-
3
A
I
DM
peak drain current
T
sp
= 25
°
C; pulsed; t
p
10
µ
s; see
Figure 3
-
-
19.4
A
P
tot
total power dissipation
T
sp
= 25
°
C; see
Figure 1
-
2.2
W
T
stg
storage temperature
-
55
+150
°
C
T
j
junction temperature
-
55
+150
°
C
Source-drain diode
I
S
source current
T
sp
= 25
°
C
-
-
1.9
A
I
SM
peak source current
T
sp
= 25
°
C; pulsed; t
p
10
µ
s
-
-
7.5
A
PMN50XP_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 23 January 2006
3 of 12
Philips Semiconductors
PMN50XP
P-channel TrenchMOS extremely low level FET
Fig 1.
Normalized total power dissipation as a
function of solder point temperature
Fig 2.
Normalized continuous drain current as a
function of solder point temperature
T
sp
= 25
°
C; I
DM
is single pulse
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
03aa17
0
40
80
120
0
50
100
150
200
T
sp
(
°
C)
P
der
(%)
03aa25
0
40
80
120
0
50
100
150
200
T
sp
(
°
C)
I
der
(%)
P
der
P
tot
P
tot 25 C
°
(
)
------------------------
100 %
×
=
I
der
I
D
I
D 25 C
°
(
)
---------------------
100 %
×
=
001aae333
V
DS
(V)
-
10
-
1
-
10
2
-
10
-
1
-
10
-
1
-
10
2
I
D
(A)
-
10
-
1
DC
t
p
= 10
µ
s
Limit R
DSon
=
-
V
DS
/
-
I
D
100
µ
s
1 ms
10 ms
100 ms
PMN50XP_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 23 January 2006
4 of 12
Philips Semiconductors
PMN50XP
P-channel TrenchMOS extremely low level FET
5.
Thermal characteristics
Table 4:
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-sp)
thermal resistance from junction to solder point
see
Figure 4
-
-
55
K/W
Fig 4.
Transient thermal impedance from junction to solder point as a function of pulse duration
03aq03
10
-1
1
10
10
2
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
t
p
(s)
Z
th(j-sp)
(K/W)
single pulse
0.2
0.1
0.05
=
0.5
0.02
t
p
T
P
t
t
p
T
=
PMN50XP_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 23 January 2006
5 of 12
Philips Semiconductors
PMN50XP
P-channel TrenchMOS extremely low level FET
6.
Characteristics
Table 5:
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
=
-
250
µ
A; V
GS
= 0 V
T
j
= 25
°
C
-
20
-
-
V
T
j
=
-
55
°
C
-
18
-
-
V
V
GS(th)
gate-source threshold
voltage
I
D
=
-
0.25 mA; V
DS
= V
GS
; see
Figure 9
and
10
T
j
= 25
°
C
-
0.55
-
0.75
-
0.95
V
T
j
= 150
°
C
-
0.35
-
-
V
T
j
=
-
55
°
C
-
-
-
1.1
V
I
DSS
drain leakage current
V
DS
=
-
20 V; V
GS
= 0 V
T
j
= 25
°
C
-
-
-
1
µ
A
T
j
= 70
°
C
-
-
-
5
µ
A
I
GSS
gate leakage current
V
GS
=
±
12 V; V
DS
= 0 V
-
-
10
-
100
nA
R
DSon
drain-source on-state
resistance
V
GS
=
-
4.5 V; I
D
=
-
2.8 A; see
Figure 6
and
8
T
j
= 25
°
C
-
48
60
m
T
j
= 150
°
C
-
77
96
m
V
GS
=
-
2.5 V; I
D
=
-
2.3 A; see
Figure 6
and
8
-
65
80
m
Dynamic characteristics
Q
G(tot)
total gate charge
I
D
=
-
4.7 A; V
DS
=
-
10 V; V
GS
=
-
4.5 V; see
Figure 11
and
12
-
10
-
nC
Q
GS
gate-source charge
-
2.2
-
nC
Q
GD
gate-drain charge
-
1.3
-
nC
V
GS(pl)
gate-source plateau
voltage
-
-
1.6
-
V
C
iss
input capacitance
V
GS
= 0 V; V
DS
=
-
20 V; f = 1 MHz; see
Figure 14
-
1020
-
pF
C
oss
output capacitance
-
140
-
pF
C
rss
reverse transfer
capacitance
-
100
-
pF
t
d(on)
turn-on delay time
V
DS
=
-
10 V; R
L
= 10
; V
GS
=
-
4.5 V;
R
G
= 6
-
8.5
-
ns
t
r
rise time
-
7.5
-
ns
t
d(off)
turn-off delay time
-
82
-
ns
t
f
fall time
-
35
-
ns
Source-drain diode
V
SD
source-drain voltage
I
S
=
-
1.7 A; V
GS
= 0 V; see
Figure 13
-
-
0.77
-
1.2
V
PMN50XP_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 23 January 2006
6 of 12
Philips Semiconductors
PMN50XP
P-channel TrenchMOS extremely low level FET
T
j
= 25
°
C
T
j
= 25
°
C
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6.
Drain-source on-state resistance as a function
of drain current; typical values
T
j
= 25
°
C and 150
°
C; V
DS
> I
D
×
R
DSon
Fig 7.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature
03aq04
-20
-15
-10
-5
0
-2
-1.5
-1
-0.5
0
V
DS
(V)
I
D
(A)
-3.5
-3
-2.5
-2
-1.5
-4.5
V
GS
(V) =
03aq05
0
30
60
90
120
150
-20
-15
-10
-5
0
I
D
(A)
R
DSon
(m
)
-2
-3
-2.5
-3.5
-4.5
V
GS
(V) =
03aq06
-20
-15
-10
-5
0
-4
-3
-2
-1
0
V
GS
(V)
I
D
(A)
T
j
= 150
°
C
25
°
C
03aq10
0
0.5
1
1.5
2
-60
0
60
120
180
T
j
(
°
C)
a
a
R
DSon
R
DSon 25 C
°
(
)
------------------------------
=
PMN50XP_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 23 January 2006
7 of 12
Philips Semiconductors
PMN50XP
P-channel TrenchMOS extremely low level FET
I
D
=
-
0.25 mA; V
DS
= V
GS
T
j
= 25
°
C; V
DS
=
-
5 V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
I
D
=
-
4.7 A; V
DS
=
-
10 V
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Gate charge waveform definitions
03ar95
-1.2
-0.8
-0.4
0
-60
0
60
120
180
T
j
(
°
C)
V
GS(th)
(V)
max
typ
min
001aae334
-
10
-
4
-
10
-
5
-
10
-
3
I
D
(A)
-
10
-
6
V
GS
(V)
0
-
1.0
-
0.8
-
0.4
-
0.6
-
0.2
max
typ
min
03aq09
-5
-4
-3
-2
-1
0
0
4
8
12
Q
G
(nC)
V
GS
(V)
I
D
= -4.7 A
T
j
= 25
°
C
V
DS
= -10 V
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
PMN50XP_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 23 January 2006
8 of 12
Philips Semiconductors
PMN50XP
P-channel TrenchMOS extremely low level FET
T
j
= 25
°
C and 150
°
C; V
GS
= 0 V
V
GS
= 0 V; f = 1 MHz
Fig 13. Source current as a function of source-drain
voltage; typical values
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
03aq07
-20
-15
-10
-5
0
-1.6
-1.2
-0.8
-0.4
0
V
SD
(V)
I
S
(A)
T
j
= 25
°
C
150
°
C
V
DS
(V)
-
10
-
1
-
10
2
-
10
-
1
001aae335
10
3
10
2
10
4
C
(pF)
10
C
iss
C
oss
C
rss
PMN50XP_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 23 January 2006
9 of 12
Philips Semiconductors
PMN50XP
P-channel TrenchMOS extremely low level FET
7.
Package outline
Fig 15. Package outline SOT457 (TSOP6)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOT457
SC-74
w
B
M
bp
D
e
pin 1
index
A
A1
Lp
Q
detail X
HE
E
v
M
A
A
B
y
scale
c
X
1
3
2
4
5
6
0
1
2 mm
Plastic surface mounted package (TSOP6); 6 leads
SOT457
UNIT
A1
bp
c
D
E
HE
Lp
Q
y
w
v
mm
0.1
0.013
0.40
0.25
3.1
2.7
0.26
0.10
1.7
1.3
e
0.95
3.0
2.5
0.2
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.6
0.2
0.33
0.23
A
1.1
0.9
04-11-08
05-11-07
PMN50XP_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 23 January 2006
10 of 12
Philips Semiconductors
PMN50XP
P-channel TrenchMOS extremely low level FET
8.
Revision history
Table 6:
Revision history
Document ID
Release date
Data sheet status
Change notice Doc. number
Supersedes
PMN50XP_1
20060123
Product data sheet
-
-
-
Philips Semiconductors
PMN50XP
P-channel TrenchMOS extremely low level FET
PMN50XP_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 23 January 2006
11 of 12
9.
Data sheet status
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Definitions
Short-form specification -- The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition -- Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information -- Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
11. Disclaimers
Life support -- These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes -- Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status `Production'),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
12. Trademarks
Notice -- All referenced brands, product names, service names and
trademarks are the property of their respective owners.
TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V.
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Level
Data sheet status
[1]
Product status
[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 23 January 2006
Document number: PMN50XP_1
Published in The Netherlands
Philips Semiconductors
PMN50XP
P-channel TrenchMOS extremely low level FET
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
3
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
6
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13
Contact information . . . . . . . . . . . . . . . . . . . . 11