Philips Semiconductors
Product specification
N-channel TrenchMOS
TM
transistor
PHX23NQ10T
FEATURES
SYMBOL
QUICK REFERENCE DATA
· 'Trench' technology
· Low on-state resistance
V
DSS
= 100 V
· Fast switching
I
D
= 13 A
R
DS(ON)
70 m
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using 'trench' technology.
Applications:-
· d.c. to d.c. converters
· switched mode power supplies
· T.V. and computer monitor power supplies
The PHX23NQ10T is supplied in the SOT186A (FPAK) conventional leaded package.
PINNING
SOT186A (FPAK)
PIN
DESCRIPTION
1
gate
2
drain
3
source
case
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j
= 25 °C to 150°C
-
100
V
V
DGR
Drain-gate voltage
T
j
= 25 °C to 150°C; R
GS
= 20 k
-
100
V
V
GS
Gate-source voltage
-
±
20
V
I
D
Continuous drain current
T
mb
= 25 °C; V
GS
= 10 V
-
13
A
T
mb
= 100 °C; V
GS
= 10 V
-
8
A
I
DM
Pulsed drain current
T
mb
= 25 °C
-
52
A
P
D
Total power dissipation
T
mb
= 25 °C
-
27
W
T
j
, T
stg
Operating junction and
- 55
150
°C
storage temperature
d
g
s
1 2 3
case
September 1999
1
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS
TM
transistor
PHX23NQ10T
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
E
AS
Non-repetitive avalanche
Unclamped inductive load, I
AS
= 14 A;
-
93
mJ
energy
t
p
= 100
µ
s; T
j
prior to avalanche = 25°C;
V
DD
25 V; R
GS
= 50
; V
GS
= 10 V; refer
to fig:15
I
AS
Peak non-repetitive
-
23
A
avalanche current
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
-
-
4.6
K/W
to mounting base
R
th j-a
Thermal resistance junction
SOT186a package, in free air
-
55
-
K/W
to ambient
ELECTRICAL CHARACTERISTICS
T
j
= 25°C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS
= 0 V; I
D
= 0.25 mA;
100
-
-
V
voltage
T
j
= -55°C
89
-
-
V
V
GS(TO)
Gate threshold voltage
V
DS
= V
GS
; I
D
= 1 mA
2
3
4
V
T
j
= 150°C
1.25
-
-
V
T
j
= -55°C
-
-
6
V
R
DS(ON)
Drain-source on-state
V
GS
= 10 V; I
D
= 13 A
-
49
70
m
resistance
T
j
= 150°C
-
115
163
m
I
GSS
Gate source leakage current V
GS
=
±
10 V; V
DS
= 0 V
-
10
100
nA
I
DSS
Zero gate voltage drain
V
DS
= 100 V; V
GS
= 0 V
-
0.05
10
µ
A
current
T
j
= 150°C
-
-
500
µ
A
Q
g(tot)
Total gate charge
I
D
= 23 A; V
DD
= 80 V; V
GS
= 10 V
-
22
-
nC
Q
gs
Gate-source charge
-
5
-
nC
Q
gd
Gate-drain (Miller) charge
-
10
-
nC
t
d on
Turn-on delay time
V
DD
= 50 V; R
D
= 2.2
;
-
8
-
ns
t
r
Turn-on rise time
V
GS
= 10 V; R
G
= 5.6
-
39
-
ns
t
d off
Turn-off delay time
Resistive load
-
26
-
ns
t
f
Turn-off fall time
-
24
-
ns
L
d
Internal drain inductance
Measured from drain lead to centre of die
-
4.5
-
nH
L
s
Internal source inductance
Measured from source lead to source
-
7.5
-
nH
bond pad
C
iss
Input capacitance
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
-
890
1187
pF
C
oss
Output capacitance
-
139
167
pF
C
rss
Feedback capacitance
-
83
109
pF
September 1999
2
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS
TM
transistor
PHX23NQ10T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25°C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
I
S
Continuous source current
-
-
13
A
(body diode)
I
SM
Pulsed source current (body
-
-
92
A
diode)
V
SD
Diode forward voltage
I
F
= 11 A; V
GS
= 0 V
-
0.9
1.2
V
t
rr
Reverse recovery time
I
F
= 11 A; -dI
F
/dt = 100 A/
µ
s;
-
64
-
ns
Q
rr
Reverse recovery charge
V
GS
= 0 V; V
R
= 25 V
-
120
-
nC
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 °C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
September 1999
3
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS
TM
transistor
PHX23NQ10T
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 °C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 °C
= f(T
mb
); conditions: V
GS
10 V
Fig.3. Safe operating area. T
mb
= 25 °C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 °C.
I
D
= f(V
DS
)
Fig.6. Typical on-state resistance, T
j
= 25 °C.
R
DS(ON)
= f(I
D
)
Normalised Power Derating, PD (%)
0
10
20
30
40
50
60
70
80
90
100
0
25
50
75
100
125
150
Mounting Base temperature, Tmb (C)
0.01
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
Pulse width, tp (s)
Transient thermal impedance, Zth j-a (K/W)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
Normalised Current Derating, ID (%)
0
10
20
30
40
50
60
70
80
90
100
0
25
50
75
100
125
150
Mounting Base temperature, Tmb (C)
0
5
10
15
20
25
30
35
40
45
50
55
0
1
2
3
4
5
6
7
8
9
10
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
4V
5 V
6 V
7 V
9 V
8 V
0.1
1
10
100
1000
1
10
100
1000
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
D.C.
100 ms
10 ms
RDS(on) = VDS/ ID
1 ms
tp = 10 us
100us
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
10
20
30
40
50
Drain Current, ID (A)
Drain-Source On Resistance, RDS(on) (Ohms)
VGS =9 V
8V
6V
7 V
5 V
4V
5.5V
6.5V
September 1999
4
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS
TM
transistor
PHX23NQ10T
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
)
Fig.8. Typical transconductance, T
j
= 25 °C.
g
fs
= f(I
D
)
Fig.9. Normalised drain-source on-state resistance.
R
DS(ON)
/R
DS(ON)25 °C
= f(T
j
)
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 °C; V
DS
= V
GS
Fig.12. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
10
20
30
40
50
0
2
4
6
8
10
VGS / V
ID / A
Tj / C = 25
150
Threshold Voltage, VGS(TO) (V)
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-60 -40 -20
0
20 40 60 80 100 120 140 160
Junction Temperature, Tj (C)
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Drain current, ID / (A)
Transconductance, gfs (S)
150 C
Tj = 25 C
Drain current, ID (A)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Gate-source voltage, VGS (V)
minimum
typical
maximum
Normalised On-state Resistance.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-60 -40 -20
0
20
40
60
80 100 120 140 160
Junction temperature , Tj (C)
10
100
1000
10000
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
September 1999
5
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS
TM
transistor
PHX23NQ10T
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
)
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Maximum permissible non-repetitive
avalanche current (I
AS
) versus avalanche time (t
AV
);
unclamped inductive load
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
5
10
15
20
25
30
35
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 23A
Tj = 25 C
VDD = 20 V
VDD = 80 V
0.1
1
10
100
0.001
0.01
0.1
1
10
Avalanche time, t
AV
(ms)
Maximum Avalanche Current, I
AS
(A)
Tj prior to avalanche = 150 C
25 C
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
1.1 1.2 1.3 1.4 1.5
Source-Drain Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
150 C
VGS = 0 V
September 1999
6
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS
TM
transistor
PHX23NQ10T
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.16. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT186A
TO-220
0
5
10 mm
scale
Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220
SOT186A
A
A1
Q
c
K
j
Notes
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.
2. Both recesses are
2.5
×
0.8 max. depth
D
D1
L
L2
L1
b1
b2
e1
e
b
w
M
1
2
3
q
E
P
T
UNIT
D
b1
D1
e
q
Q
P
L
c
L2
(1)
max.
e1
A
5.08
3
mm
4.6
4.0
A1
2.9
2.5
b
0.9
0.7
1.1
0.9
b2
1.4
1.2
0.7
0.4
15.8
15.2
6.5
6.3
E
10.3
9.7
2.54
14.4
13.5
T
(2)
2.5
0.4
L1
3.30
2.79
j
2.7
2.3
K
0.6
0.4
2.6
2.3
3.0
2.6
w
3.2
3.0
DIMENSIONS (mm are the original dimensions)
97-06-11
September 1999
7
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS
TM
transistor
PHX23NQ10T
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
©
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1999
8
Rev 1.000
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