ChipFind - Datasheet

Part Number MB2543

Download:  PDF   ZIP
Philips Semiconductors Advanced BiCMOS Products
Product specification
MB2543
Dual octal latched transceivers with dual enable
(3-State)
1
August 23, 1993
853­1656 10584
FEATURES
·
Two 8-bit octal transceivers with D-type
latch
·
Live insertation/extraction permitted
·
Power-up 3-State
·
Power-up reset
·
Multiple V
CC
and GND pins minimize
switching noise
·
Back-to-back registers for storage
·
Separate controls for data flow in each
direction
·
Output capability: +64mA/­32mA
·
Latch-up protection exceeds 500mA per
Jedec JC40.2 Std 17
·
ESD protection exceeds 2000V per MIL
STD 883 Method 3015 and 200V per
Machine Model
DESCRIPTION
The MB2543 high-performance BiCMOS
device combines low static and dynamic
power dissipation with high speed and high
output drive.
The MB2543 dual octal registered transceiver
contains two sets of D-type latches for
temporary storage of data flowing in either
direction. Separate Latch Enable (nLEAB,
nLEBA) and Output Enable (nOEAB,
nOEBA) inputs are provided for each
register to permit independent control of data
transfer in either direction. The outputs are
guaranteed to sink 64mA.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
T
amb
= 25
°
C; GND = 0V
TYPICAL
UNIT
t
PLH
t
PHL
Propagation delay
nAx to nBx
C
L
= 50pF; V
CC
= 5V
3.3
ns
C
IN
Input capacitance
V
I
= 0V or V
CC
4
pF
C
I/O
I/O capacitance
V
O
= 0V or V
CC;
3-State
7
pF
I
CCZ
Total supply current
Outputs disabled; V
CC
= 5.5V
120
µ
A
ORDERING INFORMATION
PACKAGES
TEMPERATURE RANGE
ORDER CODE
DRAWING NUMBER
52-pin plastic Quad Flat Pack
­40
°
C to +85
°
C
MB2543BB
1418B
PIN CONFIGURATION
LOGIC SYMBOL
Vcc
19
22
20
23
17
16
25
26
24
15
14
21
18
2A6
2A7
GND
2EAB
2LEAB
2OEAB
2OEBA
2LEBA
2EBA
2B7
2B6
Vcc
Vcc
1A2
1A3
1A4
GND
1A5
1A6
1A7
2A0
2A1
2A2
2A3
2A4
2A5
1
2
3
4
5
6
7
8
9
10
11
12
13
47
44
46
43
49
50
41 40
42
51
52
45
48
1B2
1B3
1B4
1B5
1B6
1B7
2B0
2B1
2B2
GND
2B3
2B4
2B5
39
38
37
36
35
34
33
32
31
30
29
28
27
MB2543
52-pin PQFP
1A1
1A0
1EAB
1LEAB
1OEAB
1OEBA
1LEBA
1EBA
GND
1B0
1B1
Vcc
42
41
39
38
37
36
35
34
1B0 1B1 1B2 1B3 1B4 1B5 1B6 1B7
50
51
1
2
3
5
6
7
1A0 1A1 1A2 1A3 1A4 1A5 1A6 1A7
49
44
1EAB
1EBA
48
1LEAB
45
1LEBA
47
1OEAB
46
1OEBA
33
32
31
29
28
27
25
24
2B0 2B1 2B2 2B3 2B4 2B5 2B6 2B7
8
9
10
11
12
13
15
16
2A0 2A1 2A2 2A3 2A4 2A5 2A6 2A7
18
23
2EAB
2EBA
19
2LEAB
22
2LEBA
20
2OEAB
21
2OEBA
Philips Semiconductors Advanced BiCMOS Products
Product specification
MB2543
Dual octal latched transceivers with dual enable
(3-State)
August 23, 1993
2
LOGIC DIAGRAM
D
LE
Q
D
LE
Q
DETAIL A
nB0
nB1
nA1
nB2
nA2
nB3
nA3
nB4
nA4
nB5
nA5
nB6
nA6
nB7
nA7
DETAIL A X 7
nOEAB
nEAB
nLEAB
nOEBA
nEBA
nLEBA
nA0
LOGIC SYMBOL (IEEE/IEC)
42
41
39
38
37
36
35
34
&
&
&
&
50
51
1
2
3
5
6
7
47
49
48
46
44
45
EN1(AB)
EN2(BA)
1
&
&
&
&
8
9
10
11
12
13
15
16
20
18
19
21
23
22
EN1(AB)
EN2(BA)
33
32
31
29
28
27
25
24
1
2
2
Philips Semiconductors Advanced BiCMOS Products
Product specification
MB2543
Dual octal latched transceivers with dual enable
(3-State)
August 23, 1993
3
FUNCTIONAL DESCRIPTION
The MB2543 contains two sets of eight
D-type latches, with separate control pins for
each set. Using data flow from A to B as an
example, when the A-to-B Enable (nEAB)
input and the A-to-B Latch Enable (nLEAB)
input are Low the A-to-B path is transparent.
A subsequent Low-to-High transition of the
nLEAB signal puts the A data into the latches
where it is stored and the B outputs no longer
change with the A inputs. With EAB and
nOEAB both Low, the 3-State B output
buffers are active and display the data
present at the outputs of the A latches.
Control of data flow from B to A is similar, but
using the nEBA, nLEBA, and nOEBA inputs.
PIN DESCRIPTION
PIN NUMBER
SYMBOL
NAME AND FUNCTION
50, 51, 1, 2, 3, 5, 6, 7,
8, 9, 10, 11, 12, 13, 15, 16
1A0 ­ 1A7,
2A0 ­ 2A7
Data inputs/outputs
42, 41, 39, 38, 37, 36, 35, 34,
33, 32, 31, 29, 28, 27, 25, 24
1B0 ­ 1B7,
2B0 ­ 2B7
Data inputs/outputs
47, 46, 20, 21
1OEAB, 1OEBA,
2OEAB, 2OEBA
A to B / B to A Output Enable inputs (active-Low)
49, 44, 18, 23
1EAB, 1EBA,
2EAB, 2EBA
A to B / B to A Enable inputs (active-Low)
48, 45, 19, 22
1LEAB, 1LEBA,
2LEAB, 2LEBA
A to B / B to A Latch Enable inputs (active-Low)
4, 17, 30, 43
GND
Ground (0V)
14, 26, 40, 52
V
CC
Positive supply voltage
FUNCTION TABLE
INPUTS
OUTPUTS
STATUS
nOEXX
nEXX
nLEXX
nAx or nBx
nBx or nAx
H
X
X
X
Z
Disabled
X
H
X
X
Z
Disabled
L
L
L
L
h
l
Z
Z
Disabled + Latch
L
L
L
L
h
l
H
L
Latch + Display
L
L
L
L
L
L
H
L
H
L
Transparent
L
L
H
X
NC
Hold
H = High voltage level
h
= High voltage level one set-up time prior to the Low-to-High transition of nLEXX or nEXX (XX = AB or BA)
L
= Low voltage level
l
= Low voltage level one set-up time prior to the Low-to-High transition of nLEXX or nEXX (XX = AB or BA)
X = Don't care
= Low-to-High transition of nLEXX or nEXX (XX = AB or BA)
NC= No change
Z = High impedance or "off" state
Philips Semiconductors Advanced BiCMOS Products
Product specification
MB2543
Dual octal latched transceivers with dual enable
(3-State)
August 23, 1993
4
ABSOLUTE MAXIMUM RATINGS
1 , 2
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
V
CC
DC supply voltage
­0.5 to +7.0
V
I
IK
DC input diode current
V
I
< 0
­18
mA
V
I
DC input voltage
3
­1.2 to +7.0
V
I
OK
DC output diode current
V
O
< 0
­50
mA
V
OUT
DC output voltage
3
output in Off or High state
­0.5 to +5.5
V
I
OUT
DC output current
output in Low state
128
mA
T
stg
Storage temperature range
­65 to 150
°
C
NOTES:
1 . Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2 . The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150
°
C.
3 . The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
LIMITS
UNIT
Min
Max
V
CC
DC supply voltage
4.5
5.5
V
V
I
Input voltage
0
V
CC
V
V
IH
High-level input voltage
2.0
V
V
IL
Low-level Input voltage
0.8
V
I
OH
High-level output current
­32
mA
I
OL
Low-level output current
64
mA
t/
v
Input transition rise or fall rate
0
10
ns/V
T
amb
Operating free-air temperature range
­40
+85
°
C
Philips Semiconductors Advanced BiCMOS Products
Product specification
MB2543
Dual octal latched transceivers with dual enable
(3-State)
August 23, 1993
5
DC ELECTRICAL CHARACTERISTICS
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
T
amb
= +25
°
C
T
amb
= ­40
°
C
to +85
°
C
UNIT
MIN
TYP
MAX
MIN
MAX
V
IK
Input clamp voltage
V
CC
= 4.5V; I
IK
= ­18mA
­0.9
­1.2
­1.2
V
V
CC
= 4.5V; I
OH
= ­3mA; V
I
= V
IL
or V
IH
2.5
2.9
2.5
V
V
OH
High-level output voltage
V
CC
= 5.0V; I
OH
= ­3mA; V
I
= V
IL
or V
IH
3.0
3.4
3.0
V
V
CC
= 4.5V; I
OH
= ­32mA; V
I
= V
IL
or V
IH
2.0
2.4
2.0
V
V
OL
Low-level output voltage
V
CC
= 4.5V; I
OL
= 64mA; V
I
= V
IL
or V
IH
0.42
0.55
0.55
V
V
RST
Power-up output voltage
3
V
CC
= 5.5V; I
O
= 1mA; V
I
= GND or V
CC
0.13
0.55
0.55
V
I
I
Input leakage
Control pins
V
CC
= 5.5V; V
I
= GND or 5.5V
±
0.01
±
1.0
±
1.0
µ
A
current
Data pins
V
CC
= 5.5V; V
I
= GND or 5.5V
±
5
±
100
±
100
µ
A
I
OFF
Power-off leakage current
V
CC
= 0.0V; V
O
or V
I
4.5V
±
5.0
±
100
±
100
µ
A
I
PU/PD
Power-up/down 3-State
output current
4
V
CC
= 2.1V; V
O
= 0.5V; V
I
= GND or V
CC
;
V
OE
= Don't care
±
5.0
±
50
±
50
µ
A
I
IH
+ I
OZH
3-State output High current
V
CC
= 5.5V; V
O
= 2.7V; V
I
= V
IL
or V
IH
5.0
50
50
µ
A
I
IL
+ I
OZL
3-State output Low current
V
CC
= 5.5V; V
O
= 0.5V; V
I
= V
IL
or V
IH
­5.0
­50
­50
µ
A
I
CEX
Output High leakage current
V
CC
= 5.5V; V
O
= 5.5V; V
I
= GND or V
CC
5.0
50
50
µ
A
I
O
Output current
1
V
CC
= 5.5V; V
O
= 2.5V
­50
­100
­180
­50
­180
mA
I
CCH
V
CC
= 5.5V; Outputs High, V
I
= GND or V
CC
120
250
250
µ
A
I
CCL
Quiescent supply current
V
CC
= 5.5V; Outputs Low, V
I
= GND or V
CC
38
60
60
mA
I
CCZ
V
CC
= 5.5V; Outputs 3-State;
V
I
= GND or V
CC
120
250
250
µ
A
I
CC
Additional supply current per
input pin
2
V
CC
= 5.5V; one input at 3.4V,
other inputs at V
CC
or GND
0.5
1.5
1.5
mA
NOTES:
1 . Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2 . This is the increase in supply current for each input at 3.4V.
3 . For valid test results, data must not be loaded into the flip-flops (or latches) after applying the power.
4 . This parameter is valid for any V
CC
between 0V and 2.1V, with a transition time of up to 10msec. From V
CC
= 2.1V to V
CC
= 5V
±
10% a
transition time of up to 100
µ
sec is permitted.