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DATA SHEET
Product specification
Supersedes data of 1999 May 25
2002 Feb 27
DISCRETE SEMICONDUCTORS
BZX79 series
Voltage regulator diodes
M3D176
2002 Feb 27
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
FEATURES
·
Total power dissipation: max. 500 mW
·
Two tolerance series:
±
2%, and approx.
±
5%
·
Working voltage range: nom. 2.4 to 75 V (E24 range)
·
Non-repetitive peak reverse power dissipation:
max. 40 W.
APPLICATIONS
·
Low voltage stabilizers or voltage references.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed
leaded glass SOD27 (DO-35) packages. The diodes are
available in the normalized E24
±
2% (BZX79-B) and
approx.
±
5% (BZX79-C) tolerance range. The series
consists of 37 types with nominal working voltages from
2.4 to 75 V.
Fig.1
Simplified outline (SOD27; DO-35) and
symbol.
The diodes are type branded.
handbook, halfpage
MAM239
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max.
2. Tie-point temperature
50
°
C; max. lead length 8 mm.
ELECTRICAL CHARACTERISTICS
Total BZX79-B and BZX79-C series
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
F
continuous forward current
-
250
mA
I
ZSM
non-repetitive peak reverse current
t
p
= 100
µ
s; square wave;
T
j
= 25
°
C prior to surge
see Tables 1 and 2 A
P
tot
total power dissipation
T
amb
= 50
°
C; note 1
-
400
mW
T
amb
= 50
°
C; note 2
-
500
mW
P
ZSM
non-repetitive peak reverse power
dissipation
t
p
= 100
µ
s; square wave;
T
j
= 25
°
C prior to surge; see Fig.3
-
40
W
T
stg
storage temperature
-
65
+200
°
C
T
j
junction temperature
-
65
+200
°
C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
I
F
= 10 mA; see Fig.4
0.9
V
2002 Feb 27
3
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
I
R
reverse current
BZX79-B/C2V4
V
R
= 1 V
50
µ
A
BZX79-B/C2V7
V
R
= 1 V
20
µ
A
BZX79-B/C3V0
V
R
= 1 V
10
µ
A
BZX79-B/C3V3
V
R
= 1 V
5
µ
A
BZX79-B/C3V6
V
R
= 1 V
5
µ
A
BZX79-B/C3V9
V
R
= 1 V
3
µ
A
BZX79-B/C4V3
V
R
= 1 V
3
µ
A
BZX79-B/C4V7
V
R
= 2 V
3
µ
A
BZX79-B/C5V1
V
R
= 2 V
2
µ
A
BZX79-B/C5V6
V
R
= 2 V
1
µ
A
BZX79-B/C6V2
V
R
= 4 V
3
µ
A
BZX79-B/C6V8
V
R
= 4 V
2
µ
A
BZX79-B/C7V5
V
R
= 5 V
1
µ
A
BZX79-B/C8V2
V
R
= 5 V
700
nA
BZX79-B/C9V1
V
R
= 6 V
500
nA
BZX79-B/C10
V
R
= 7 V
200
nA
BZX79-B/C11
V
R
= 8 V
100
nA
BZX79-B/C12
V
R
= 8 V
100
nA
BZX79-B/C13
V
R
= 8 V
100
nA
BZX79-B/C15 to BZX79-B/C75
V
R
= 0.7V
Znom
50
nA
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
2002
Feb
27
4
Philips Semiconductors
Product specification
V
oltage regulator diodes
BZX79 ser
ies
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Table 1
Per type, BZX79-B/C2V4 to BZX79-B/C24
T
j
= 25
°
C unless otherwise specified.
BZX79-
Bxxx
Cxxx
WORKING VOLTAGE
V
Z
(V)
at I
Ztest
= 5 mA
DIFFERENTIAL RESISTANCE
r
dif
(
)
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 5 mA
(see Figs 5 and 6)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
= 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A)
at t
p
= 100
µ
s; T
amb
= 25
°
C
Tol.
±
2% (B)
Tol. approx.
±
5% (C)
at I
Ztest
= 1 mA
at I
Ztest
= 5 mA
MIN.
MAX.
MIN.
MAX.
TYP.
MAX.
TYP.
MAX.
MIN.
TYP.
MAX.
MAX.
MAX.
2V4
2.35
2.45
2.2
2.6
275
600
70
100
-
3.5
-
1.6
0
450
6.0
2V7
2.65
2.75
2.5
2.9
300
600
75
100
-
3.5
-
2.0
0
450
6.0
3V0
2.94
3.06
2.8
3.2
325
600
80
95
-
3.5
-
2.1
0
450
6.0
3V3
3.23
3.37
3.1
3.5
350
600
85
95
-
3.5
-
2.4
0
450
6.0
3V6
3.53
3.67
3.4
3.8
375
600
85
90
-
3.5
-
2.4
0
450
6.0
3V9
3.82
3.98
3.7
4.1
400
600
85
90
-
3.5
-
2.5
0
450
6.0
4V3
4.21
4.39
4.0
4.6
410
600
80
90
-
3.5
-
2.5
0
450
6.0
4V7
4.61
4.79
4.4
5.0
425
500
50
80
-
3.5
-
1.4
0.2
300
6.0
5V1
5.00
5.20
4.8
5.4
400
480
40
60
-
2.7
-
0.8
1.2
300
6.0
5V6
5.49
5.71
5.2
6.0
80
400
15
40
-
2.0
1.2
2.5
300
6.0
6V2
6.08
6.32
5.8
6.6
40
150
6
10
0.4
2.3
3.7
200
6.0
6V8
6.66
6.94
6.4
7.2
30
80
6
15
1.2
3.0
4.5
200
6.0
7V5
7.35
7.65
7.0
7.9
30
80
6
15
2.5
4.0
5.3
150
4.0
8V2
8.04
8.36
7.7
8.7
40
80
6
15
3.2
4.6
6.2
150
4.0
9V1
8.92
9.28
8.5
9.6
40
100
6
15
3.8
5.5
7.0
150
3.0
10
9.80
10.20
9.4
10.6
50
150
8
20
4.5
6.4
8.0
90
3.0
11
10.80
11.20
10.4
11.6
50
150
10
20
5.4
7.4
9.0
85
2.5
12
11.80
12.20
11.4
12.7
50
150
10
25
6.0
8.4
10.0
85
2.5
13
12.70
13.30
12.4
14.1
50
170
10
30
7.0
9.4
11.0
80
2.5
15
14.70
15.30
13.8
15.6
50
200
10
30
9.2
11.4
13.0
75
2.0
16
15.70
16.30
15.3
17.1
50
200
10
40
10.4
12.4
14.0
75
1.5
18
17.60
18.40
16.8
19.1
50
225
10
45
12.4
14.4
16.0
70
1.5
20
19.60
20.40
18.8
21.2
60
225
15
55
12.3
15.6
18.0
60
1.5
22
21.60
22.40
20.8
23.3
60
250
20
55
14.1
17.6
20.0
60
1.25
24
23.50
24.50
22.8
25.6
60
250
25
70
15.9
19.6
22.0
55
1.25
2002
Feb
27
5
Philips Semiconductors
Product specification
V
oltage regulator diodes
BZX79 ser
ies
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Table 2
Per type, BZX79-B/C27 to BZX79-B/C75
T
j
= 25
°
C unless otherwise specified.
BZX79-
Bxxx
Cxxx
WORKING VOLTAGE
V
Z
(V)
at I
Ztest
= 2 mA
DIFFERENTIAL RESISTANCE
r
dif
(
)
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 2 mA
(see Figs 5 and 6)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
= 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A)
at t
p
= 100
µ
s; T
amb
= 25
°
C
Tol.
±
2% (B)
Tol. approx.
±
5% (C)
at I
Ztest
= 0.5 mA at I
Ztest
= 2 mA
MIN.
MAX.
MIN.
MAX.
TYP.
MAX.
TYP.
MAX.
MIN.
TYP.
MAX.
MAX.
MAX.
27
26.50
27.50
25.1
28.9
65
300
25
80
18.0
22.7
25.3
50
1.0
30
29.40
30.60
28.0
32.0
70
300
30
80
20.6
25.7
29.4
50
1.0
33
32.30
33.70
31.0
35.0
75
325
35
80
23.3
28.7
33.4
45
0.9
36
35.30
36.70
34.0
38.0
80
350
35
90
26.0
31.8
37.4
45
0.8
39
38.20
39.80
37.0
41.0
80
350
40
130
28.7
34.8
41.2
45
0.7
43
42.10
43.90
40.0
46.0
85
375
45
150
31.4
38.8
46.6
40
0.6
47
46.10
47.90
44.0
50.0
85
375
50
170
35.0
42.9
51.8
40
0.5
51
50.00
52.00
48.0
54.0
90
400
60
180
38.6
46.9
57.2
40
0.4
56
54.90
57.10
52.0
60.0
100
425
70
200
42.2
52.0
63.8
40
0.3
62
60.80
63.20
58.0
66.0
120
450
80
215
58.8
64.4
71.6
35
0.3
68
66.60
69.40
64.0
72.0
150
475
90
240
65.6
71.7
79.8
35
0.25
75
73.50
76.50
70.0
79.0
170
500
95
255
73.4
80.2
88.6
35
0.2
2002 Feb 27
6
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point lead length 8 mm.
300
K/W
R
th j-a
thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1
380
K/W
GRAPHICAL DATA
handbook, full pagewidth
10
-
1
1
10
10
2
10
3
10
4
10
5
MBG930
10
2
10
1
10
3
tp (ms)
tp
tp
T
T
=
0.02
0.01
0.001
0.75
0.50
0.33
0.20
0.10
0.05
= 1
Rth j-a
(K/W)
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.
2002 Feb 27
7
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
Fig.3
Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
handbook, halfpage
MBG801
10
3
1
duration (ms)
PZSM
(W)
10
10
2
10
-
1
10
1
(1)
(2)
(1) T
j
= 25
°
C (prior to surge).
(2) T
j
= 150
°
C (prior to surge).
Fig.4
Typical forward current as a function of
forward voltage.
handbook, halfpage
0.6
1.0
300
100
0
200
MBG781
0.8
VF (V)
IF
(mA)
T
j
= 25
°
C.
Fig.5
Temperature coefficient as a function of
working current; typical values.
handbook, halfpage
0
60
0
-
2
-
3
-
1
MBG783
20
40
IZ (mA)
SZ
(mV/K)
4V3
3V9
3V6
3V0
2V4
2V7
3V3
BZX79-B/C2V4 to BZX79-B/C4V3.
T
j
= 25 to 150
°
C.
Fig.6
Temperature coefficient as a function of
working current; typical values.
handbook, halfpage
0
20
16
10
0
-
5
5
MBG782
4
8
12
IZ (mA)
SZ
(mV/K)
4V7
12
11
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1
BZX79-B/C4V7 to BZX79-B/C12.
T
j
= 25 to 150
°
C.
2002 Feb 27
8
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
Note
1. The marking band indicates the cathode.
SOD27
DO-35
A24
SC-40
97-06-09
Hermetically sealed glass package; axial leaded; 2 leads
SOD27
UNIT
b
max.
mm
0.56
D
max.
G1
max.
25.4
4.25
1.85
L
min.
DIMENSIONS (mm are the original dimensions)
G1
L
D
L
b
(1)
0
1
2 mm
scale
2002 Feb 27
9
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS
(1)
PRODUCT
STATUS
(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2002 Feb 27
10
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
NOTES
2002 Feb 27
11
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
NOTES
© Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands
613514/03/pp
12
Date of release:
2002 Feb 27
Document order number:
9397 750 09387
Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- LIMITING VALUES
- ELECTRICAL CHARACTERISTICS
- THERMAL CHARACTERISTICS
- GRAPHICAL DATA
- PACKAGE OUTLINE
- DATA SHEET STATUS
- DEFINITIONS
- DISCLAIMERS
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