DATA SHEET
Product specification
Supersedes data of May 1996
1996 Sep 26
DISCRETE SEMICONDUCTORS
BYX120G
High-voltage soft-recovery
controlled avalanche rectifier
book, halfpage
M3D183
1996 Sep 26
2
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifier
BYX120G
FEATURES
·
Glass passivated
·
High maximum operating
temperature
·
Low leakage current
·
Excellent stability
·
Guaranteed avalanche energy
absorption capability.
APPLICATIONS
·
Car ignition systems
·
Automotive applications with
extreme temperature
requirements.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
The package is designed to be used
in an insulating medium such as
resin, oil or SF6 gas.
Fig.1 Simplified outline (SOD88A) and symbol.
handbook, halfpage
MSB026
a
k
The cathode is marked by an orange band on the body.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
V
RRM
repetitive peak reverse voltage
-
3
kV
V
RWM
crest working reverse voltage
-
3
kV
I
F(AV)
average forward current
-
100
mA
I
FRM
repetitive peak forward current
-
5
A
I
FSM
non-repetitive peak forward current
t = 10 ms half sinewave; T
j
= T
j max
prior to surge; V
R
= V
RWMmax
-
15
A
P
RSM
non-repetitive peak reverse power
dissipation
t = 10
µ
s; triangular pulse;
T
j
= T
j max
prior to surge
-
3
kW
T
stg
storage temperature
-
65
+200
°
C
T
j
junction temperature
continuous
-
65
+180
°
C
maximum 30 mins
-
65
+200
°
C
1996 Sep 26
3
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifier
BYX120G
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 250 mA
-
-
5
V
V
(BR)R
reverse avalanche
breakdown voltage
I
R
= 0.1 mA
3.5
-
-
kV
I
R
reverse current
V
R
= V
RWMmax
; T
j
= 180
°
C
-
-
75
µ
A
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
T
amb
= T
leads
55
K/W
1996 Sep 26
4
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifier
BYX120G
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.2 SOD88A.
Dimensions in mm.
The marking band indicates the cathode.
handbook, full pagewidth
30.5 min
30.5 min
8 max
0.81
max
3.8
max
MSA215 - 3
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