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Part Number BU506

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DATA SHEET
Product specification
Supersedes data of December 1991
File under Discrete Semiconductors, SC06
1997 Aug 13
DISCRETE SEMICONDUCTORS
BU506; BU506D
Silicon diffused power transistors
1997 Aug 13
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506; BU506D
DESCRIPTION
High-voltage, high-speed, switching
NPN power transistor in a TO-220AB
package. The BU506D has an
integrated efficiency diode.
APPLICATIONS
·
Horizontal deflection circuits of
colour television receivers
·
Line-operated switch-mode
applications.
PINNING
PIN
DESCRIPTION
1
base
2
collector; connected to
mounting base
3
emitter
Fig.1 Simplified outline (TO-220AB) and symbols.
a. BU506.
b. BU506D.
MBK106
1 2 3
3
2
1
MBB008
3
2
1
MBB077
QUICK REFERENCE DATA
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
collector-emitter peak voltage
V
BE
= 0
-
1500
V
V
CEO
collector-emitter voltage
open base
-
700
V
V
CEsat
collector-emitter saturation
voltage
I
C
= 3 A; I
B
= 1.33 A; see Fig.6
-
1
V
V
F
diode forward voltage (BU506D)
I
F
= 3 A; see Fig.10
1.5
-
V
I
Csat
collector saturation current
-
3
A
I
C
collector current (DC)
see Fig.2
-
5
A
I
CM
collector current (peak value)
see Fig.2
-
8
A
P
tot
total power dissipation
T
mb
25
°
C; see Fig.3
-
100
W
t
f
fall time
inductive load; see Fig.9
0.7
-
µ
s
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-mb
thermal resistance from junction to mounting base
1.25
K/W
1997 Aug 13
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506; BU506D
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1. Measured with a half-sinewave voltage (curve tracer).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
collector-emitter peak voltage
V
BE
= 0
-
1500
V
V
CEO
collector-emitter voltage
open base
-
700
V
I
Csat
collector saturation current
-
3
A
I
C
collector current (DC)
see Fig.2
-
5
A
I
CM
collector current (peak value)
see Fig.2
-
8
A
I
B
base current (DC)
-
3
A
I
BM
base current (peak value)
-
5
A
P
tot
total power dissipation
T
mb
25
°
C; see Fig.3
-
100
W
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
150
°
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CEOsust
collector-emitter sustaining voltage
see Figs 4 and 5
700
-
-
V
V
CEsat
collector-emitter saturation voltage
I
C
= 3 A; I
B
= 1.33 A; see Fig.6
-
-
1
V
V
BEsat
base-emitter saturation voltage
I
C
= 3 A; I
B
= 1.33 A; see Fig.7
-
-
1.3
V
V
F
diode forward voltage (BU506D)
I
F
= 3 A; see Fig.10
-
1.5
2.2
V
I
CES
collector-emitter cut-off current
V
CE
= V
CESmax
; V
BE
= 0; note 1
-
-
0.5
mA
V
CE
= V
CESmax
; V
BE
= 0;
T
j
= 125
°
C; note 1
-
-
1
mA
I
EBO
emitter-base cut-off current
V
EB
= 6 V; I
C
= 0
-
-
10
mA
h
FE
DC current gain
V
CE
= 5 V; I
C
= 100 mA;
see Fig.8
6
13
30
Switching times in horizontal deflection circuit (see Fig.9)
t
s
storage time
I
CM
= 3 A; I
B(end)
= 1A;
L
B
= 12
µ
H
-
6.5
-
µ
s
t
f
fall time
I
CM
= 3 A; I
B(end)
= 1A;
L
B
= 12
µ
H
-
0.7
-
µ
s
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506; BU506D
Fig.2 Forward bias SOAR.
T
mb
= 25
°
C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
handbook, full pagewidth
MGB923
1
10
1
10
2
10
3
10
4
II
I
VCE (V)
10
10
-
1
10
2
10
-
2
10
-
4
10
-
3
IC
(A)
ICM max
IC max
1997 Aug 13
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506; BU506D
Fig.3 Power derating curve.
handbook, halfpage
0
50
Tmb (
o
C)
100
150
120
0
40
80
MGD283
Ptot max
(%)
Fig.4
Test circuit for collector-emitter
sustaining voltage.
handbook, halfpage
MGE252
+
50 V
100 to 200
30 to 60 Hz
L
6 V
oscilloscope
vertical
horizontal
1
300
Fig.5
Oscilloscope display for collector-emitter
sustaining voltage.
handbook, halfpage
MGE239
IC
(mA)
250
200
100
0
min
VCEOsust
VCE (V)
Fig.6
Collector-emitter saturation voltage as a
function of base current; typical values.
(1) I
C
= 1 A.
(2) I
C
= 2 A.
(3) I
C
= 3 A.
T
mb
= 25
°
C.
handbook, halfpage
10
-
2
10
-
1
10
-
1
1
10
1
VCEsat
(V)
IB (A)
10
MGB869
(1)
(2)
(3)
1997 Aug 13
5
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506; BU506D
Fig.7
Base-emitter saturation voltage as a
function of base current; typical values.
(1) I
C
= 3 A.
(2) I
C
= 2 A.
(3) I
C
= 1 A.
T
mb
= 25
°
C.
handbook, halfpage
1.5
0.5
10
-
1
1
10
MGB881
1
VBEsat
(V)
IB (A)
(1)
(3)
(2)
Fig.8 DC current gain; typical values.
handbook, halfpage
10
-
2
10
-
1
1
10
2
10
1
hFE
IC (A)
10
MGB874
(1)
(2)
(1) V
CE
= 1 V; T
j
= 25
°
C.
(2) V
CE
= 5 V; T
j
= 125
°
C.
Fig.9 Switching time waveforms.
handbook, halfpage
MBH382
time
time
IB (end)
10%
90%
ts
tf
iC
ICsat
iB
Fig.10 Diode forward voltage.
T
mb
= 25
°
C.
handbook, halfpage
5
0.6
1
1.8
0
MGB906
1.4
1
2
3
4
IF
(A)
VF (V)
1997 Aug 13
6
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506; BU506D
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT78
TO-220
D
D1
q
P
L
1
2
3
L2
(1)
b1
e
e
b
0
5
10 mm
scale
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220
SOT78
DIMENSIONS (mm are the original dimensions)
A
E
A1
c
Note
1. Terminals in this zone are not tinned.
Q
L1
UNIT
A1
b1
D1
e
P
mm
2.54
q
Q
A
b
D
c
L2
(1)
max.
3.0
3.8
3.6
15.0
13.5
3.30
2.79
3.0
2.7
2.6
2.2
0.7
0.4
15.8
15.2
0.9
0.7
1.3
1.0
4.5
4.1
1.39
1.27
6.4
5.9
10.3
9.7
L1
E
L
97-06-11
1997 Aug 13
7
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506; BU506D
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1997 Aug 13
8
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506; BU506D
NOTES
1997 Aug 13
9
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506; BU506D
NOTES
1997 Aug 13
10
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506; BU506D
NOTES
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© Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
137067/00/01/pp12
Date of release: 1997 Aug 13
Document order number:
9397 750 02711