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Part Number BU4507DZ

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507DZ
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations
resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
8
A
I
CM
Collector current peak value
-
15
A
P
tot
Total power dissipation
T
hs
25 °C
-
32
W
V
CEsat
Collector-emitter saturation voltage
I
C
= 4 A; I
B
= 1.0 A
-
3.0
V
I
Csat
Collector saturation current
f = 16kHz
4
-
A
V
F
Diode forward voltage
I
F
= 4 A
1.7
2.1
V
t
f
Fall time
I
Csat
= 4 A; f = 16kHz
300
400
ns
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
8
A
I
CM
Collector current peak value
-
15
A
I
B
Base current (DC)
-
4
A
I
BM
Base current peak value
-
6
A
-I
BM
Reverse base current peak value
1
-
5
A
P
tot
Total power dissipation
T
hs
25 °C
-
32
W
T
stg
Storage temperature
-65
150
°C
T
j
Junction temperature
-
150
°C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
with heatsink compound
-
4.0
K/W
R
th j-a
Junction to ambient
in free air
55
-
K/W
1 2 3
case
b
c
e
Rbe
1 Turn-off current.
January 1999
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507DZ
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 °C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs
= 25 °C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
1.0
mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
2.0
mA
T
j
= 125 °C
V
CEOsust
Collector-emitter sustaining voltage
I
B
= 0 A; I
C
= 100 mA;
800
-
-
V
L = 25 mH
BV
EBO
Emitter-base breakdown voltage
I
B
= 600 mA
7.5
13.5
-
V
R
be
Base-emitter resistance
V
EB
= 6 V
-
30
-
V
CEsat
Collector-emitter saturation voltages I
C
= 4 A; I
B
= 1.0 A
-
-
3.0
V
V
BEsat
Base-emitter saturation voltage
I
C
= 4 A; I
B
= 1.0 A
0.83
0.92
1.01
V
h
FE
DC current gain
I
C
= 500 mA; V
CE
= 5 V
-
7
-
h
FE
I
C
= 4 A; V
CE
= 5 V
4.2
5.7
7.3
V
F
Diode forward voltage
I
F
= 4 A
-
1.7
2.1
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 °C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (16 kHz line
I
Csat
= 4 A; I
B1
= 0.8 A;(I
B2
= -2 A)
deflection circuit)
t
s
Turn-off storage time
3.7
4.6
µ
s
t
f
Turn-off fall time
300
400
ns
V
fr
Anti-parallel diode forward recovery
I
F
= 4 A; dI
F
/dt = 50 A/
µ
s
18.5
-
V
voltage
t
fr
Anti-parallel diode forward recovery
V
F
= 5 V
500
-
ns
time
2 Measured with half sine-wave voltage (curve tracer).
January 1999
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507DZ
Fig.1. Switching times waveforms (16 kHz).
Fig.2. Switching times definitions.
Fig.3. Definition of anti-parallel diode V
fr
and t
fr
.
Fig.4. Switching times test circuit.
Fig.5. High and low DC current gain.
Fig.6. High and low DC current gain.
IC
IB
VCE
ICsat
IB1
64us
26us
20us
t
t
t
TRANSISTOR
DIODE
IB2
+ 150 v nominal
adjust for ICsat
Lc
Cfb
D.U.T.
LB
IBend
-VBB
Rbe
ICsat
90 %
10 %
tf
ts
IB1
IC
IB
t
t
- IB2
0.01
0.1
1
10
1
10
100
IC / A
hFE
VCE = 1V
Ths = 25 C
Ths = 85 C
time
time
V
F
V
fr
V
F
I
F
fr
t
10%
5 V
I
F
0.01
0.1
1
10
1
10
100
IC / A
hFE
VCE = 5V
Ths = 25 C
Ths = 85 C
BU4507DF/X/Z
January 1999
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507DZ
Fig.7. Typical collector-emitter saturation voltage.
Fig.8. Typical base-emitter saturation voltage.
Fig.9. Typical collector storage and fall time.
I
C
=4 A; T
j
= 85°C; f = 16kHz
Fig.10. Normalised power dissipation.
PD% = 100
P
D
/P
D 25°C
Fig.11. Transient thermal impedance.
0.1
1
10
100
0.01
0.1
1
10
Ths = 25 C
Ths = 85 C
IC/IB = 5
BU4507DF/X/Z
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0
1
2
3
4
0.6
0.7
0.8
0.9
1
1.1
1.2
IB / A
VBESAT \ V
IC = 4 A
Ths = 25 C
Ths = 85 C
BU4507DF/X/Z
1.0E-07
1.0E-05
1.0E-3
1.0E-01
1.0E+01
0.001
0.01
0.1
1
10
0
0.2
0.1
0.05
0.02
0.5
BU4507AZ
t / s
Zth K/W
D =
t
p
t
p
T
T
P
t
D
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
IB / A
ts/tf/ us
ICsat = 4 A
Ths = 85 C
Freq = 16 kHz
BU4507D ts/tf
January 1999
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507DZ
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.12. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
1
2
3
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M
0.4
15.8
max.
19
max.
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
1.3
January 1999
5
Rev 1.000