Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2515DX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic
envelope intended for use in horizontal deflection circuits of pc monitors.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
9
A
I
CM
Collector current peak value
-
20
A
P
tot
Total power dissipation
T
hs
25 °C
-
45
W
V
CEsat
Collector-emitter saturation voltage
I
C
= 4.5 A; I
B
= 0.9 A
-
5.0
V
I
Csat
Collector saturation current
f = 56 kHz
4.5
-
A
V
F
Diode forward voltage
I
F
= 4.5 A
-
2.2
V
t
f
Fall time
I
Csat
= 4.5 A; f = 56 kHz
0.2
0.4
µ
s
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
9
A
I
CM
Collector current peak value
-
20
A
I
B
Base current (DC)
-
5
A
I
BM
Base current peak value
-
7.5
A
-I
B(AV)
Reverse base current
average over any 20 ms period
-
125
mA
-I
BM
Reverse base current peak value
1
-
6
A
P
tot
Total power dissipation
T
hs
25 °C
-
45
W
T
stg
Storage temperature
-55
150
°C
T
j
Junction temperature
-
150
°C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
R
th j-a
Junction to ambient
in free air
35
-
K/W
case
1 2 3
b
c
e
Rbe
1 Turn-off current.
September 1997
1
Rev 1.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2515DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 °C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs
= 25 °C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
1.0
mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
;
-
-
2.0
mA
T
j
= 125 °C
I
EBO
Emitter cut-off current
V
EB
= 6 V; I
C
= 0 A
-
130
-
mA
BV
EBO
Emitter-base breakdown voltage
I
B
= 600 mA
7.5
13.5
-
V
V
CEOsust
Collector-emitter sustaining voltage
I
B
= 0 A; I
C
= 100 mA;
800
-
-
V
L = 25 mH
R
be
Base-emitter resistance
V
EB
= 6 V
-
46
-
V
CEsat
Collector-emitter saturation voltage
I
C
= 4.5 A; I
B
= 0.9 A
-
-
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C
= 4.5 A; I
B
= 0.9 A
-
-
1.0
V
h
FE
DC current gain
I
C
= 1.0 A; V
CE
= 5 V
-
13
-
h
FE
I
C
= 4.5 A; V
CE
= 5 V
5
8
10.2
V
F
Diode forward voltage
I
F
= 4.5 A
-
-
2.2
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 °C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (56 kHz line
I
Csat
= 4.5 A; L
C
= 250
µ
H; C
fb
= 4 nF;
deflection circuit)
I
B(end)
= 0.65 A; L
B
= 1.5
µ
H;
-V
BB
= -4 V; -I
BM
= 2.7 A
t
s
Turn-off storage time
2.2
3.0
µ
s
t
f
Turn-off fall time
0.2
0.4
µ
s
V
fr
Anti-parallel diode forward recovery
I
F
= 4.5 A; dI
F
/dt = 50 A/
µ
s
17
-
V
voltage
t
fr
Anti-parallel diode forward recovery
V
F
= 5 V
360
-
ns
time
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2515DX
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
Fig.3. Definition of anti-parallel diode V
fr
and t
fr
.
Fig.4. Switching times test circuit.
Fig.5. High and low DC current gain. h
FE
= f (I
C
)
V
CE
= 1 V
Fig.6. High and low DC current gain. h
FE
= f (I
C
)
V
CE
= 5 V
IC
IB
VCE
ICsat
IBend
18us
8.8us
t
t
t
TRANSISTOR
DIODE
+ 150 v nominal
adjust for ICsat
Lc
Cfb
D.U.T.
LB
IBend
-VBB
Rbe
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
0.01
0.1
1
10
100
1
10
100
VCE = 1 V
Ths = 25 C
Ths = 85 C
hFE
BU2515DF/X
IC / A
time
time
V
F
V
fr
V
F
I
F
fr
t
10%
5 V
I
F
BU2515DF/X
0.01
0.1
1
10
100
1
10
100
VCE = 5 V
Ths = 25 C
Ths = 85 C
hFE
IC / A
September 1997
3
Rev 1.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2515DX
Fig.7. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
Fig.8. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.9. Typical losses.
P
TOT
= f (I
B
); I
C
= 4.5 A; f = 56 kHz
Fig.10. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); I
C
= 4.5 A; T
j
= 85°C; f = 56 kHz
Fig.11. Normalised power dissipation.
PD% = 100
P
D
/P
D 25°C
= f (T
mb
)
Fig.12. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
0.1
1
10
100
0.01
0.1
1
10
Ths = 25 C
Ths = 85 C
IC/IB = 10
IC/IB = 5
VCEsat / V
BU2515DF/X
IC / A
0
0.5
1
1.5
2
0
1
2
3
4
5
ts/tf / us
BU2515AF/DF/AX/DX
IB / A
0
1
2
3
4
0.6
0.7
0.8
0.9
1
1.1
1.2
VBEsat / V
BU2515DF/AX
IB / A
IC = 6 A
IC = 4 A
Ths = 25 C
Ths = 85 C
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0
0.5
1
1.5
2
1
10
100
PTOT / W
BU2515AF/DF/AX/DX
IB / A
Ths = 25 C
Ths = 85 C
1E-06
1E-04
1E-02
1E+00
t / s
Zth / (K/W)
D = 0
0.02
0.05
0.1
0.2
0.5
D =
t
p
t
p
T
T
P
t
D
10
1
0.1
0.01
0.001
September 1997
4
Rev 1.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2515DX
Fig.13. Test Circuit RBSOA. V
CC
= 150 V;
-V
BB
= 1 - 5 V;
L
C
= 1.5 mH; V
CL
= 1450 V; L
B
= 0.3 - 2
µ
H;
C
FB
= 0.5 - 8 nF; I
B(end)
= 0.65 - 1.3 A
Fig.14. Reverse bias safe operating area. T
j
T
jmax
Fig.15. I
Csat
during normal running vs. frequency of
operation for optimum performance
LB
IBend
-VBB
LC
T.U.T.
VCC
VCL
CFB
0
10
20
30
40
50
60
70
80
0
1
2
3
4
5
6
7
8
BU2515AF/AX
frequency (kHz)
Ic(sat) (A)
100
1000
0
10
20
30
VCE / V
IC / A
BU2515
Area where
fails occur
1500
September 1997
5
Rev 1.300
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