Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- PINNING
- QUICK REFERENCE DATA
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 23
DISCRETE SEMICONDUCTORS
BSX45; BSX46; BSX47
NPN medium power transistors
M3D111
1997 Apr 23
2
Philips Semiconductors
Product specification
NPN medium power transistors
BSX45; BSX46; BSX47
FEATURES
·
High current (max. 1 A)
·
Low voltage (max. 80 V).
APPLICATIONS
·
General industrial applications.
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
collector, connected to case
Fig.1 Simplified outline (TO-39) and symbol.
handbook, halfpage
3
1
2
MAM317
1
2
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BSX45
-
-
80
V
BSX46
-
-
100
V
BSX47
-
-
120
V
V
CEO
collector-emitter voltage
open base
BSX45
-
-
40
V
BSX46
-
-
60
V
BSX47
-
-
80
V
I
CM
peak collector current
-
-
1.5
A
P
tot
total power dissipation
T
case
25
°
C
-
-
6.25
W
h
FE
DC current gain
I
C
= 100 mA; V
CE
= 1 V
BSX45-10; BSX46-10; BSX47-10
63
100
160
BSX45-16; BSX46-16; BSX47-16
100
160
250
f
T
transition frequency
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz 50
-
-
MHz
1997 Apr 23
3
Philips Semiconductors
Product specification
NPN medium power transistors
BSX45; BSX46; BSX47
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BSX45
-
80
V
BSX46
-
100
V
BSX47
-
120
V
V
CEO
collector-emitter voltage
open base
BSX45
-
40
V
BSX46
-
60
V
BSX47
-
80
V
V
EBO
emitter-base voltage
open collector
-
7
V
I
C
collector current (DC)
-
1
A
I
CM
peak collector current
-
1.5
A
I
BM
peak base current
-
200
mA
P
tot
total power dissipation
T
case
25
°
C
-
6.25
W
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
200
°
C
T
amb
operating ambient temperature
-
65
+150
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient in free air
200
K/W
R
th j-c
thermal resistance from junction to case
28
K/W
1997 Apr 23
4
Philips Semiconductors
Product specification
NPN medium power transistors
BSX45; BSX46; BSX47
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
I
CBO
collector cut-off current
BSX45; BSX46
I
E
= 0; V
CB
= 60 V
-
-
30
nA
I
E
= 0; V
CB
= 60 V; T
amb
= 150
°
C
-
-
10
µ
A
I
CBO
collector cut-off current
BSX47
I
E
= 0; V
CB
= 80 V
-
-
30
nA
I
E
= 0; V
CB
= 80 V; T
amb
= 150
°
-
-
10
µ
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 5 V
-
-
10
nA
h
FE
DC current gain
I
C
= 100
µ
A; V
CE
= 1 V
BSX45-10; BSX46-10; BSX47-10
15
40
-
BSX45-16; BSX46-16
25
90
-
h
FE
DC current gain
I
C
= 100 mA; V
CE
= 1 V
BSX45-10; BSX46-10; BSX47-10
63
100
160
BSX45-16; BSX46-16; BSX47-16
100
160
250
h
FE
DC current gain
I
C
= 500 mA; V
CE
= 1 V
BSX45-10; BSX46-10; BSX47-10
25
40
-
BSX45-16; BSX46-16
35
60
-
h
FE
DC current gain
I
C
= 1 A; V
CE
= 1 V
BSX45-10; BSX46-10; BSX47-10
-
20
-
BSX45-16; BSX46-16
-
30
-
V
CEsat
collector-emitter saturation voltage
I
C
= 1 A; I
B
= 100 mA
BSX45; BSX46
-
-
1
V
V
CEsat
collector-emitter saturation voltage
I
C
= 500 mA; I
B
= 25 mA
BSX47
-
-
900
mV
V
BE
base-emitter voltage
I
C
= 100 mA; V
CE
= 1 V
-
-
1
V
I
C
= 500 mA; V
CE
= 1 V
0.75
-
1.5
V
I
C
= 1 A; V
CE
= 1 V
-
-
2
V
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
BSX45
-
-
25
pF
BSX46
-
-
20
pF
BSX47
-
-
15
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
-
-
80
pF
f
T
transition frequency
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz
50
-
-
MHz
F
noise figure
I
C
= 100
µ
A; V
CE
= 5 V; R
S
= 1 k
;
f = 1 kHz; B = 200 Hz
-
3.5
-
dB
Switching times (between 10% and 90% levels)
t
on
turn-on time
I
Con
= 100 mA; I
Bon
= 5 mA;
I
Boff
=
-
5 mA
-
-
200
ns
t
off
turn-off time
-
-
850
ns
1997 Apr 23
5
Philips Semiconductors
Product specification
NPN medium power transistors
BSX45; BSX46; BSX47
PACKAGE OUTLINE
UNIT
a
b
D
D
1
j
k
L
w
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
6.60
6.35
0.48
0.41
9.39
9.08
8.33
8.18
0.85
0.75
0.95
0.75
14.2
12.7
0.2
45
°
DIMENSIONS (mm are the original dimensions)
SOT5/11
TO-39
97-04-11
k
j
D
A
L
seating plane
b
D
1
0
5
10 mm
scale
A
5.08
Metal-can cylindrical single-ended package; 3 leads
SOT5/11
A
w
A
M
M
B
M
B
a
1
2
3
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