DATA SHEET
Product specification
Supersedes data of 1997 Apr 22
1999 Apr 26
DISCRETE SEMICONDUCTORS
BSR62
PNP Darlington transistor
book, halfpage
M3D186
1999 Apr 26
2
Philips Semiconductors
Product specification
PNP Darlington transistor
BSR62
FEATURES
·
High current (max. 1 A)
·
Low voltage (max. 80 V)
·
Integrated diode and resistor.
APPLICATIONS
·
Industrial applications such as:
Print hammer
Solenoid
Relay and lamp driving.
DESCRIPTION
PNP Darlington transistor in a TO-92; SOT54 plastic
package. NPN complement: BSR52.
PINNING
PIN
DESCRIPTION
1
base
2
collector
3
emitter
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
MAM306
1
2
3
1
2
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
90
V
V
CES
collector-emitter voltage
V
BE
= 0
-
-
80
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
1
A
I
CM
peak collector current
-
-
2
A
I
B
base current (DC)
-
-
0.2
A
P
tot
total power dissipation
T
amb
25
°
C; note 1
-
0.83
W
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
150
°
C
T
amb
operating ambient temperature
-
65
+150
°
C
1999 Apr 26
3
Philips Semiconductors
Product specification
PNP Darlington transistor
BSR62
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
collector cut-off current
V
BE
= 0; V
CE
=
-
80 V
-
-
-
50
nA
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
4 V
-
-
-
50
nA
h
FE
DC current gain
V
CE
=
-
10 V; see Fig.2
I
C
=
-
150 mA
1000
-
-
I
C
=
-
500 mA
2000
-
-
V
CEsat
collector-emitter saturation
voltage
I
C
=
-
0.5 A; I
B
=
-
0.5 mA
-
-
-
1.4
V
I
C
=
-
1 A; I
B
=
-
4 mA
-
-
-
1.8
V
V
BEsat
base-emitter saturation voltage I
C
=
-
0.5 A; I
B
=
-
0.5 mA
-
-
-
2
V
I
C
=
-
1 A; I
B
=
-
4 mA
-
-
-
2.4
V
f
T
transition frequency
I
C
=
-
500 mA; V
CE
=
-
5 V;
f = 100 MHz
-
200
-
MHz
Switching times (between 10% and 90% levels); see Fig.3
t
on
turn-on time
I
Con
=
-
500 mA; I
Bon
=
-
0.5 mA;
I
Boff
= 0.5 mA
-
-
0.5
µ
s
t
off
turn-off time
-
-
0.7
µ
s
1999 Apr 26
4
Philips Semiconductors
Product specification
PNP Darlington transistor
BSR62
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
6000
2000
1000
3000
4000
5000
MGD839
-
10
-
1
-
1
-
10
-
10
2
-
10
3
hFE
IC (mA)
V
CE
=
-
10 V.
Fig.3 Test circuit for switching times.
handbook, full pagewidth
RC
R2
R1
DUT
MGD624
Vo
RB
(probe)
450
(probe)
450
oscilloscope
oscilloscope
VBB
Vi
VCC
V
i
=
-
10 V; T = 200
µ
s; t
p
= 6
µ
s; t
r
= t
f
3 ns.
R1 = 56
; R2 = 10 k
; R
B
= 10 k
; R
C
= 18
.
V
BB
= 1.8 V; V
CC
=
-
10.7 V.
Oscilloscope: input impedance Z
i
= 50
.
1999 Apr 26
5
Philips Semiconductors
Product specification
PNP Darlington transistor
BSR62
PACKAGE OUTLINE
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1
(1)
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54
TO-92
SC-43
97-02-28
A
L
0
2.5
5 mm
scale
b
c
D
b
1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
e1
e
1
2
3
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