1997 Mar 13

Philips Semiconductors

Product specification

P-channel enhancement mode vertical
D-MOS transistor

BSP090

FEATURES

High speed switching

No secondary breakdown

Very low on-state resistance.

APPLICATIONS

Motor and actuator drivers

Power management

Synchronized rectification.

DESCRIPTION

P-channel enhancement mode vertical D-MOS transistor
in a 4-pin plastic SOT223 SMD package.

CAUTION

The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.

PINNING - SOT223

PIN

SYMBOL

DESCRIPTION

gate

drain

source

drain

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM121

Top view

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage (DC)

source-drain diode forward voltage

1.25 A

1.3

gate-source voltage (DC)

GSth

gate-source threshold voltage

1 mA; V

= V

2.8

drain current (DC)

= 100

5.7

DSon

drain-source on-state resistance

2.8 A; V

10 V

0.09

tot

total power dissipation

= 100

1997 Mar 13

Philips Semiconductors

Product specification

P-channel enhancement mode vertical
D-MOS transistor

BSP090

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

1. T

is the temperature at the soldering point of the drain lead.

2. Pulse width and duty cycle limited by maximum junction temperature.

3. Device mounted on a printed-circuit board with a R

th a-tp

(ambient to tie-point) of 27.5 K/W.

4. Device mounted on a printed-circuit board with a R

th a-tp

(ambient to tie-point) of 90 K/W.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage (DC)

gate-source voltage (DC)

drain current (DC)

= 100

C; note 1

5.7

peak drain current

note 2

tot

total power dissipation

= 100

amb

= 25

C; note 3

3.3

amb

= 25

C; note 4

1.25

stg

storage temperature

+150

operating junction temperature

+150

Source-drain diode

source current (DC)

= 100

3.8

peak pulsed source current

note 2

SYMBOL

PARAMETER

VALUE

UNIT

th j-s

thermal resistance from junction to soldering point

K/W

1997 Mar 13

Philips Semiconductors

Product specification

P-channel enhancement mode vertical
D-MOS transistor

BSP090

Fig.2 Power derating curve.

handbook, halfpage

Ptot

(W)

100

200

150

Ts (

MGD716

= 0.01; T

= 100

(1) R

DSon

limitation.

Fig.3 SOAR.

handbook, halfpage

MGD727

VDS (V)

(A)

(1)

tp =

100

1 ms

10 ms

100 ms

1997 Mar 13

Philips Semiconductors

Product specification

P-channel enhancement mode vertical
D-MOS transistor

BSP090

CHARACTERISTICS

= 25

C; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

(BR)DSS

drain-source breakdown voltage

= 0; I

GSth

gate-source threshold voltage

= V

; I

1 mA

2.8

DSS

drain-source leakage current

= 0; V

24 V

500

GSS

gate leakage current

20 V; V

= 0

100

DSon

drain-source on-state resistance

4.5 V; I

1.4 A

0.15

10 V; I

2.8 A

0.09

iss

input capacitance

= 0; V

24 V; f = 1 MHz

800

oss

output capacitance

= 0; V

24 V; f = 1 MHz

400

rss

reverse transfer capacitance

= 0; V

24 V; f = 1 MHz

100

total gate charge

10 V; V

15 V;

2.8 A; T

amb

= 25

gate-source charge

10 V; V

15 V;

2.8 A; T

amb

= 25

2.5

gate-drain charge

10 V; V

15 V;

2.8 A; T

amb

= 25

d(on)

turn-on delay time

= 0 to

10 V; V

15 V;

1 A; R

= 15

; R

gen

= 6

rise time

= 0 to

10 V; V

15 V;

1 A; R

= 15

; R

gen

= 6

turn-on switching time

= 0 to

10 V; V

15 V;

1 A; R

= 15

; R

gen

= 6

d(off)

turn-off delay time

10 to 0 V; V

15 V;

1 A; R

= 15

; R

gen

= 6

fall time

10 to 0 V; V

15 V;

1 A; R

= 15

; R

gen

= 6

off

turn-off switching time

10 to 0 V; V

15 V;

1 A; R

= 15

; R

gen

= 6

190

Source-drain diode

source-drain diode forward voltage

= 0; I

1.25 A

1.3

reverse recovery time

1.25 A; di/dt = 100 A/

Part Number BSP090