DATA SHEET
Product specification
Supersedes data of 1999 Apr 01
1999 Dec 06
DISCRETE SEMICONDUCTORS
BLF2047L
UHF power LDMOS transistor
book, halfpage
M3D379
1999 Dec 06
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047L
FEATURES
·
High power gain
·
Easy power control
·
Excellent ruggedness
·
Source on underside eliminates DC isolators, reducing
common mode inductance
·
Designed for broadband operation (1.8 to 2 GHz)
·
Internal input and output matching for high gain and
efficiency.
APPLICATIONS
·
Common source class-AB operation for PCN and PCS
applications in the 1800 to 2000 MHz frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistors encapsulated in a 2-lead SOT502A flange
package with a ceramic cap. The common source is
connected to the mounting flange.
PINNING
PIN
DESCRIPTION
1
drain
2
gate
3
source, connected to flange
handbook, halfpage
Top view
MBK394
1
2
3
Fig.1 Simplified outline SOT502A.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common source test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
D
(%)
d
im
(dBc)
Two-tone, class-AB
f
1
= 2000; f
2
= 2000.1
26
65 (PEP)
>10.5
>30
-
25
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DS
drain-source voltage
-
65
V
V
GS
gate-source voltage
-
±
15
V
I
D
DC drain current
-
9
A
T
stg
storage temperature
-
65
+
150
°
C
T
j
junction temperature
-
200
°
C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Dec 06
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047L
THERMAL CHARACTERISTICS
Note
1. Determined under specified RF operating conditions.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
h
= 25
°
C; R
th j-h
= 1.15 K/W, unless otherwise specified.
Ruggedness in class-AB operation
The BLF2047L is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
DS
= 26 V; I
DQ
= 350 mA; P
L
= 65 W; f = 2000 MHz.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-h
thermal resistance from junction to
heatsink
T
h
= 25
°
C, P
tot
= 152 W, note 1
1.15
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
drain-source breakdown voltage
V
GS
= 0; I
D
= 1.4 mA
65
-
-
V
V
GSth
gate-source threshold voltage
V
DS
= 10 V; I
D
= 140 mA
1.5
-
3.5
V
I
DSS
drain-source leakage current
V
GS
= 0; V
DS
= 26 V
-
-
10
µ
A
I
DSX
on-state drain current
V
GS
= V
GS th
+ 9 V; V
DS
= 10 V
18
-
-
A
I
GSS
gate leakage current
V
GS
=
±
15 V; V
DS
= 0
-
-
250
nA
g
fs
forward transconductance
V
DS
= 10 V; I
D
= 5 A
-
4
-
S
R
DSon
drain-source on-state resistance
V
GS
= V
GS th
+ 9 V; I
D
= 5 A
-
0.17
-
C
rss
feedback capacitance
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
-
3.4
-
pF
MODE OF OPERATION
f
(MHz)
V
DS
(V)
I
DQ
(mA)
P
L
(W)
G
p
(dB)
D
(%)
d
im
(dBc)
Two-tone, class-AB
f
1
= 2000; f
2
= 2000.1
26
350
65 (PEP)
>10.5
>30
-
25
1999 Dec 06
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047L
handbook, halfpage
0
100
15
5
MGS950
10
50
0
10
20
30
40
20
40
60
80
Gp
(dB)
Gp
PL (PEP) (W)
D
(%)
D
Fig.2
Power gain and drain efficiency as a
function of load power; typical values.
f
1
= 2000 MHz; f
2
= 2000.1 MHz; V
DS
= 26 V;
I
DQ
= 350 mA; T
h
25
°
C.
handbook, halfpage
0
-
20
-
40
-
60
-
10
-
30
-
50
MGS951
0
100
20
40
60
80
PL (PEP) (W)
dim
(dBc)
d3
d5
d7
f
1
= 2000 MHz; f
2
= 2000.1 MHz; V
DS
= 26 V;
I
DQ
= 350 mA; T
h
25
°
C.
Fig.3
Intermodulation distortion as a function of
load power; typical values.
handbook, halfpage
1.6
1.8
2
2.4
8
-
2
6
MGS952
2.2
4
2
0
Zi
(
)
xi
ri
f (GHz)
Fig.4
Input impedance as a function of frequency
(series components); typical values.
V
DS
= 26 V; I
D
= 350 mA; P
L
= 65 W; T
h
25
°
C.
handbook, halfpage
1.6
1.8
2
2.4
4
-
6
2
MGS953
2.2
0
-
2
-
4
ZL
(
)
RL
XL
f (GHz)
Fig.5
Load impedance as a function of frequency
(series components); typical values.
V
DS
= 26 V; I
D
= 350 mA; P
L
= 65 W; T
h
25
°
C.
1999 Dec 06
5
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047L
handbook, full pagewidth
MGS954
C8
C9
C3
L16
L14
L12
L20
L1
L3
L2
L4
L6
L8
L10
L11
L15
L17
L13
L5
L7
L9
L18
L19
C7
C10
C4
C11
C15
input
50
output
50
C1
C2
C14
C12
C13
R2
F1
C16
C17
Vdd
R1
C5
C6
Vgate
Fig.6 Class-AB test circuit at f = 2 GHz.
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