DATA SHEET
Product specification
Supersedes data of 1999 Jul 01
1999 Dec 02
DISCRETE SEMICONDUCTORS
BLF2047
UHF power LDMOS transistor
book, halfpage
M3D379
1999 Dec 02
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047
FEATURES
·
High power gain
·
Easy power control
·
Excellent ruggedness
·
Source on underside eliminates DC isolators, reducing
common mode inductance
·
Designed for broadband operation (1.8 to 2.2 GHz).
·
Internal input and output matching for high gain and
efficiency
APPLICATIONS
·
Common source class-AB operation for PCN and PCS
applications in the 1800 to 2200 MHz frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange SOT502A
package with a ceramic cap. The common source is
connected to the mounting flange.
PINNING
PIN
DESCRIPTION
1
drain
2
gate
3
source connected to flange
handbook, halfpage
Top view
MBK394
1
2
3
Fig.1 Simplified outline SOT502A.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
D
(%)
d
im
(dBc)
Two-tone, class-AB
f
1
= 2200; f
2
= 2200.1
26
65 (PEP)
>10
>30
-
25
28
65 (PEP)
typ. 12.6
typ. 31
typ.
-
29
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Dec 02
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Determined under specified RF operating conditions, based on maximum peak junction temperature.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DS
drain-source voltage
-
65
V
V
GS
gate-source voltage
-
±
15
V
I
D
DC drain current
-
9
A
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
200
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-h
thermal resistance from junction to heatsink T
h
= 25
°
C, P
tot
= 152 W, note 1
1.15
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
drain-source breakdown voltage
V
GS
= 0; I
D
= 1.4 mA
65
-
-
V
V
GSth
gate-source threshold voltage
V
DS
= 10 V; I
D
= 140 mA
1.5
-
3.5
V
I
DSS
drain-source leakage current
V
GS
= 0; V
DS
= 26 V
-
-
10
µ
A
I
DSX
on-state drain current
V
GS
=V
GSth
+ 9 V; V
DS
= 10 V
18
-
-
A
I
GSS
gate leakage current
V
GS
=
±
15 V; V
DS
= 0
-
-
250
nA
g
fs
forward transconductance
V
DS
= 10 V; I
D
= 5 A
-
4
-
S
R
DSon
drain-source on-state resistance
V
GS
=V
GSth
+ 9 V; I
D
= 5 A
-
0.17
-
C
rss
feedback capacitance
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
-
3.4
-
pF
1999 Dec 02
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
h
= 25
°
C; R
th j-h
= 1.15 K/W; unless otherwise specified.
Ruggedness in class-AB operation
The BLF2047 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V
DS
= 26 V; I
DQ
= 400 mA; P
L
= 65 W (CW); f = 2200 MHz.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
I
DQ
(mA)
P
L
(W)
G
p
(dB)
D
(%)
d
im
(dBc)
Two-tone, class-AB
f
1
= 2200; f
2
= 2200.1
26
400
65 (PEP)
>10
>30
-
25
28
400
65 (PEP)
typ. 12.6
typ. 31
typ.
-
29
handbook, halfpage
0
20
40
80
15
5
MGS914
60
10
50
0
40
30
20
10
Gp
(dB)
Gp
D
(%)
D
PL (PEP) (W)
Fig.2
Power gain and drain efficiency as functions
of peak envelope load power; typical values.
V
DS
= 26 V; I
DQ
= 400 mA; T
h
25
°
C;
f
1
= 2000 MHz; f
2
= 2000.1 MHz.
handbook, halfpage
0
20
40
80
15
5
MGS913
60
10
50
0
40
30
20
10
Gp
(dB)
Gp
D
(%)
D
PL (PEP) (W)
Fig.3
Power gain and drain efficiency as functions
of peak envelope load power; typical values.
V
DS
= 26 V; I
DQ
= 400 mA; T
h
25
°
C;
f
1
= 2200 MHz; f
2
= 2200.1 MHz.
1999 Dec 02
5
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047
handbook, halfpage
0
100
0
-
60
-
40
-
20
MGS915
20
40
60
80
PL (PEP) (W)
dim
(dBc)
d7
d5
d3
V
DS
= 26 V; I
DQ
= 400 mA; T
h
25
°
C;
f
1
= 2000 MHz; f
2
= 2000.1 MHz.
Fig.4
Intermodulation distortion as a function of
peak envelope load power; typical values.
handbook, halfpage
0
100
0
-
60
-
40
-
20
MGS916
20
40
60
80
PL (PEP) (W)
dim
(dBc)
d7
d5
d3
V
DS
= 26 V; I
DQ
= 400 mA; T
h
25
°
C;
f
1
= 2200 MHz; f
2
= 2200.1 MHz.
Fig.5
Intermodulation distortion as a function of
peak envelope load power; typical values.
handbook, halfpage
0
100
0
-
60
-
40
-
20
MGS917
20
40
60
80
PL (PEP) (W)
d3
(dBc)
(2)
(3)
(1)
Fig.6
Intermodulation distortion as a function of
peak envelope load power; typical values.
V
DS
= 26 V; T
h
25
°
C; f
1
= 2200 MHz; f
2
= 2200.1 MHz.
(1) I
DQ
= 350 mA.
(2) I
DQ
= 400 mA.
(3) I
DQ
= 450 mA.
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