Product specification
Supersedes data of 1998 Jul 09
1998 Oct 21
DISCRETE SEMICONDUCTORS
BFG480W
NPN wideband transistor
M3D124
1998 Oct 21
2
Philips Semiconductors
Product specification
NPN wideband transistor
BFG480W
FEATURES
·
High power gain
·
High efficiency
·
Low noise figure
·
High transition frequency
·
Emitter is thermal lead
·
Low feedback capacitance
·
Linear and non-linear operation.
APPLICATIONS
·
RF front end with high linearity system demands
(CDMA)
·
Common emitter class AB driver.
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a 4-pin dual-emitter
SOT343R plastic package.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
Fig.1 Simplified outline SOT343R.
Marking code: P6.
handbook, halfpage
Top view
MSB842
2
1
4
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CEO
collector-emitter voltage open base
-
4.5
V
I
C
collector current (DC)
80
250
mA
P
tot
total power dissipation
T
s
60
°
C
-
360
mW
f
T
transition frequency
I
C
= 80 mA; V
CE
= 2 V; f = 2 GHz; T
amb
= 25
°
C
21
-
GHz
G
max
maximum gain
I
C
= 80 mA; V
CE
= 2 V; f = 2 GHz; T
amb
= 25
°
C
16
-
dB
F
noise figure
I
C
= 8 mA; V
CE
= 2 V; f = 2 GHz;
S
=
opt
1.8
-
dB
G
p
power gain
Pulsed; class-AB;
< 1 : 2; t
p
= 5 ms;
V
CE
= 3.6 V; f = 2 GHz; P
L
= 100 mW
13.5
-
dB
C
collector efficiency
Pulsed; class-AB;
< 1 : 2; t
p
= 5 ms;
V
CE
= 3.6 V; f = 2 GHz; P
L
= 100 mW
45
-
%
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
1998 Oct 21
3
Philips Semiconductors
Product specification
NPN wideband transistor
BFG480W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the emitter pins.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
14.5
V
V
CEO
collector-emitter voltage
open base
-
4.5
V
V
EBO
emitter-base voltage
open collector
-
1
V
I
C
collector current (DC)
-
250
mA
P
tot
total power dissipation
T
s
60
°
C; note 1; see Fig.2
-
360
mW
T
stg
storage temperature
-
65
+150
°
C
T
j
operating junction temperature
-
150
°
C
Fig.2 Power derating curve.
handbook, halfpage
0
40
80
160
500
0
400
MGR623
Ts (
°
C)
Ptot
(mW)
120
300
200
100
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
250
K/W
1998 Oct 21
4
Philips Semiconductors
Product specification
NPN wideband transistor
BFG480W
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1. G
max
is the maximum power gain, if K > 1. If K < 1 then G
max
= MSG; see Figs 6, 7 and 8.
2. Z
S
is optimized for noise; Z
L
is optimized for gain.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown voltage
I
C
= 50
µ
A; I
E
= 0
14.5
-
-
V
V
(BR)CEO
collector-emitter breakdown voltage
I
C
= 5 mA; I
B
= 0
4.5
-
-
V
V
(BR)EBO
emitter-base breakdown voltage
I
E
= 100
µ
A; I
C
= 0
1
-
-
V
I
CBO
collector-base leakage current
V
CE
= 5 V; V
BE
= 0
-
-
70
nA
h
FE
DC current gain
I
C
= 80 mA; V
CE
= 2 V; see Fig.3
40
60
100
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 2 V; f = 1 MHz
-
1.4
-
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
-
2.2
-
pF
C
re
feedback capacitance
I
C
= 0; V
CB
= 2 V; f = 1 MHz;
see Fig.4
-
340
-
fF
f
T
transition frequency
I
C
= 80 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
°
C; see Fig.5
-
21
-
GHz
G
max
maximum power gain; note 1
I
C
= 80 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
°
C; see Figs 7 and 8
-
16
-
dB
insertion power gain
I
C
= 80 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
°
C; see Fig.8
-
12
-
dB
F
noise figure
I
C
= 8 mA; V
CE
= 2 V; f = 900 MHz;
S
=
opt
; see Fig.13
-
1.2
-
dB
I
C
= 8 mA; V
CE
= 2 V; f = 2 GHz;
S
=
opt
; see Fig.13
-
1.8
-
dB
P
L1
output power at 1 dB gain
compression
Class-AB;
< 1 : 2; t
p
= 5 ms;
V
CE
= 3.6 V; I
CQ
= 1 mA; f = 2 GHz
-
20
-
dBm
ITO
third order intercept point
I
C
= 80 mA; V
CE
= 2 V; f = 2 GHz;
Z
S
= Z
S opt
; Z
L
= Z
L opt
; note 2
-
28
-
dBm
S
21
2
1998 Oct 21
5
Philips Semiconductors
Product specification
NPN wideband transistor
BFG480W
Fig.3
DC current gain as a function of collector
current; typical values.
V
CE
= 2 V.
handbook, halfpage
0
50
100
150
100
0
80
MGR624
IC (mA)
hFE
60
40
20
I
C
= 0; f = 1 MHz.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
0
800
400
600
200
0
1
5
MGR625
2
3
4
VCB (V)
Cre
(fF)
Fig.5
Transition frequency as a function of
collector current; typical values.
f = 2 GHz; V
CE
= 2 V; T
amb
= 25
°
C.
handbook, halfpage
30
20
10
0
MGR626
10
10
2
10
3
IC (mA)
fT
(GHz)
f = 900 MHz; V
CE
= 2 V.
Fig.6
Gain as a function of collector current;
typical values.
handbook, halfpage
0
40
80
160
30
10
0
20
MGR627
120
IC (mA)
gain
(dB)
MSG
S21
Gmax
PDF 
ZIP