DATA SHEET
Product specification
Supersedes data of 1996 Dec 09
1999 Apr 21
DISCRETE SEMICONDUCTORS
BF585; BF587
NPN high-voltage transistors
handbook, halfpage
M3D067
1999 Apr 21
2
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF585; BF587
FEATURES
·
Low feedback capacitance.
APPLICATIONS
·
For use in video output stages of black and white and
colour television receivers.
DESCRIPTION
NPN transistors in a TO-202; SOT128B plastic package.
PNP complement: BF588.
PINNING
PIN
DESCRIPTION
1
emitter
2
collector
3
base
Fig.1
Simplified outline (TO-202; SOT128B)
and symbol.
handbook, halfpage
1
2
3
MBH793
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BF585
-
350
V
BF587
-
400
V
V
CEO
collector-emitter voltage
open base
BF585
-
300
V
BF587
-
350
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
-
100
mA
I
CM
peak collector current
-
200
mA
I
BM
peak base current
-
100
mA
P
tot
total power dissipation
in free air; T
amb
25
°
C
-
1.6
W
in free air; T
mb
25
°
C
-
5
W
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
150
°
C
T
amb
operating ambient temperature
-
65
+150
°
C
1999 Apr 21
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF585; BF587
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
78
K/W
R
th j-mb
thermal resistance from junction to mounting base
25
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 300 V
-
20
nA
I
E
= 0; V
CB
= 250 V; T
j
= 150
°
C
-
20
µ
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 5 V
-
100
nA
h
FE
DC current gain
I
C
= 25 mA; V
CE
= 20 V
50
-
I
C
= 40 mA; V
CE
= 20 V
20
-
V
CEsat
collector-emitter saturation voltage
I
C
= 30 mA; I
B
= 5 mA
-
600
mV
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 30 V; f = 1 MHz
-
2.5
pF
C
re
feedback capacitance
I
C
= i
c
= 0; V
CE
= 30 V; f = 1 MHz
-
1.8
pF
f
T
transition frequency
I
C
= 10 mA; V
CE
= 10 V
70
110
MHz
1999 Apr 21
4
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF585; BF587
PACKAGE OUTLINE
UNIT
bp
D
E
1
L1
L2
(1)
max
L
c
c1
E
P
Q
w
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.8
0.6
0.65
0.5
0.56
0.46
8.6
8.4
10.1
9.9
10.4
10.0
2.54
13.3
12.2
e1
5.08
e
HE
24.2
23.8
2.4
2.0
3.8
3.6
P1
3.9
3.7
0.25
1.7
1.5
DIMENSIONS (mm are the original dimensions)
2.5
SOT128B
TO-202
97-02-28
A
c
1
D
E
L1
L2
L
bp
c
E1
HE
P
Q
A
P1
4.6
4.4
Plastic single-ended leaded (through hole) package; with cooling fin, mountable to heatsink,
1 mounting hole; 3 leads (in-line)
SOT128B
e
e1
1
2
3
0
5
10 mm
scale
w
M
Note
1. Plastic flash allowed within this zone
1999 Apr 21
5
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF585; BF587
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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