Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- PINNING
- QUICK REFERENCE DATA
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 11
DISCRETE SEMICONDUCTORS
BCY70; BCY71
PNP general purpose transistors
M3D361
1997 Jul 11
2
Philips Semiconductors
Product specification
PNP general purpose transistors
BCY70; BCY71
FEATURES
·
Low current (max. 200 mA)
·
Low voltage (max. 45 V).
APPLICATIONS
·
General purpose industrial applications.
DESCRIPTION
PNP transistor in a TO-18 metal package.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
collector, connected to case
Fig.1 Simplified outline (TO-18) and symbol.
handbook, halfpage
MAM263
1
3
2
3
1
2
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BCY70
-
-
50
V
BCY71
-
-
45
V
V
CEO
collector-emitter voltage
open base
BCY70
-
-
40
V
BCY71
-
-
45
V
I
CM
peak collector current
-
-
200
mA
P
tot
total power dissipation
T
amb
25
°
C
-
350
mW
h
FE
DC current gain
I
C
=
-
10 mA; V
CE
=
-
1 V
100
-
f
T
transition frequency
I
C
=
-
10 mA; V
CE
=
-
20 V; f = 100 MHz
250
-
MHz
1997 Jul 11
3
Philips Semiconductors
Product specification
PNP general purpose transistors
BCY70; BCY71
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BCY70
-
-
50
V
BCY71
-
-
45
V
V
CEO
collector-emitter voltage
open base
BCY70
-
-
40
V
BCY71
-
-
45
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
200
mA
I
CM
peak collector current
-
-
200
mA
I
BM
peak base current
-
-
100
mA
P
tot
total power dissipation
T
amb
25
°
C
-
350
mW
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
200
°
C
T
amb
operating ambient temperature
-
65
+150
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient in free air
500
K/W
R
th j-c
thermal resistance from junction to case
150
K/W
1997 Jul 11
4
Philips Semiconductors
Product specification
PNP general purpose transistors
BCY70; BCY71
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
BCY70
I
E
= 0; V
CB
=
-
50 V
-
-
20
nA
I
E
= 0; V
CB
=
-
50 V; T
j
= 100
°
C
-
-
5
µ
A
I
CBO
collector cut-off current
BCY71
I
E
= 0; V
CB
=
-
45 V
-
-
20
nA
I
E
= 0; V
CB
=
-
45 V; T
j
= 100
°
C
-
-
5
µ
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
4 V
-
-
10
nA
I
C
= 0; V
EB
=
-
4 V; T
j
= 100
°
C
-
-
2
µ
A
I
C
= 0; V
EB
=
-
5 V
-
-
500
nA
h
FE
DC current gain
V
CE
=
-
1 V
I
C
=
-
10
µ
A
60
-
I
C
=
-
0.1 mA
80
-
I
C
=
-
1 mA
100
-
I
C
=
-
50 mA
45
-
h
FE
DC current gain
I
C
=
-
10 mA; V
CE
=
-
1 V
BCY70
100
-
BCY71
-
500
V
CEsat
collector-emitter saturation voltage
I
C
=
-
10 mA; I
B
=
-
1 mA
-
-
250
mV
I
C
=
-
50 mA; I
B
=
-
5 mA
-
-
500
mV
V
BEsat
base-emitter saturation voltage
I
C
=
-
10 mA; I
B
=
-
1 mA
-
600
-
900
mV
I
C
=
-
50 mA; I
B
=
-
5 mA
-
-
1.2
V
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
=
-
10 V; f = 1 MHz
-
6
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
=
-
1 V; f = 1 MHz
-
8
pF
f
T
transition frequency
I
C
=
-
10 mA; V
CE
=
-
20 V; f = 100 MHz
250
-
MHz
F
noise figure
I
C
=
-
100
µ
A; V
CE
=
-
5 V; R
S
= 1 k
;
f = 10 Hz to 15.7 kHz
BCY70
-
6
dB
BCY71
-
2
dB
Switching times (between 10% and 90% levels)
BCY70
t
on
turn-on time
I
Con
=
-
10 mA; I
Bon
=
-
1 mA; I
Boff
= 1 mA
-
65
ns
t
d
delay time
-
35
ns
t
r
rise time
-
35
ns
t
off
turn-off time
-
500
ns
t
s
storage time
-
420
ns
t
f
fall time
-
80
ns
1997 Jul 11
5
Philips Semiconductors
Product specification
PNP general purpose transistors
BCY70; BCY71
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT18/13
TO-18
B11/C7 type 3
97-04-18
a
k
D
A
L
seating plane
b
D
1
0
5
10 mm
scale
Metal-can cylindrical single-ended package; 3 leads
SOT18/13
w
A
M
M
B
M
A
1
2
3
j
B
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
w
mm
5.31
4.74
0.47
0.41
5.45
5.30
4.70
4.55
1.03
0.94
1.1
0.9
15.0
12.7
0.40
45
°
A
a
b
D
D1
j
k
L
2.54
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