Document Outline
- FEATURES
- PINNING
- APPLICATIONS
- DESCRIPTION
- MARKING
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- PACKAGE OUTLINE
- DATA SHEET STATUS
- DEFINITIONS
- DISCLAIMERS
DATA SHEET
Product specification
Supersedes data of 2001 Sep 10
2001 Nov 07
DISCRETE SEMICONDUCTORS
BC857BV
PNP general purpose double
transistor
M3D744
2001 Nov 07
2
Philips Semiconductors
Product specification
PNP general purpose double transistor
BC857BV
FEATURES
·
300 mW total power dissipation
·
Very small 1.6 mm
×
1.2 mm
×
0.55 mm ultra thin
package
·
Excellent coplanarity due to straight leads
·
Improved thermal behaviour due to flat leads
·
Reduces number of components as replacement of two
SC-75/SC-89 packaged BISS transistors
·
Reduces required board space
·
Reduces pick and place costs.
APPLICATIONS
·
General purpose switching and amplification.
DESCRIPTION
PNP double transistor in a SOT666 plastic package.
NPN complement: BC847BV.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
BC857BV
3F
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
MAM450
1
3
2
TR1
TR2
6
4
5
1
2
3
4
6
5
Top view
Fig.1 Simplified outline (SOT666) and symbol.
2001 Nov 07
3
Philips Semiconductors
Product specification
PNP general purpose double transistor
BC857BV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
V
CBO
collector-base voltage
open emitter
-
-
50
V
V
CEO
collector-emitter voltage
open base
-
-
45
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
100
mA
I
CM
peak collector current
-
-
200
mA
I
BM
peak base current
-
-
200
mA
P
tot
total power dissipation
T
amb
25
°
C; note 1
-
200
mW
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
150
°
C
T
amb
operating ambient temperature
-
65
+150
°
C
Per device
P
tot
total power dissipation
T
amb
25
°
C; note 1
-
300
mW
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
notes 1 and 2
416
K/W
2001 Nov 07
4
Philips Semiconductors
Product specification
PNP general purpose double transistor
BC857BV
CHARACTERISTICS
T
amb
= 25
°
C; unless otherwise specified.
Note
1. Pulse test: t
p
300
µ
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor
I
CBO
collector-base cut-off current
I
E
= 0; V
CB
=
-
30 V
-
-
-
15
nA
I
E
= 0; V
CB
=
-
30 V; T
j
= 150
°
C
-
-
-
5
µ
A
I
EBO
emitter-base cut-off current
I
C
= 0; V
EB
=
-
5 V
-
-
-
100
nA
h
FE
DC current gain
I
C
=
-
2 mA; V
CE
=
-
5 V
200
-
450
V
BE
base-emitter voltage
I
C
=
-
2 mA; V
CE
=
-
5 V
-
600
-
655
-
750
mV
V
CEsat
collector-emitter saturation voltage I
C
=
-
10 mA; I
B
=
-
0.5 mA
-
-
-
100
mV
I
C
=
-
100 mA; I
B
=
-
5. mA; note 1
-
-
-
400
mV
V
BEsat
base-emitter saturation voltage
I
C
=
-
10 mA; I
B
=
-
0.5 mA
-
-
755
-
mV
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
=
-
10 V; f = 1 MHz
-
-
2.2
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
=
-
500 mV;
f = 1 MHz
-
10
-
pF
f
T
transition frequency
I
C
=
-
10 mA; V
CE
=
-
5 V;
f = 100 MHz
100
-
-
MHz
2001 Nov 07
5
Philips Semiconductors
Product specification
PNP general purpose double transistor
BC857BV
Graphical information BC857BV
handbook, halfpage
0
1000
200
400
600
800
MHB975
-
10
-
2
-
10
-
1
1
10
IC (mA)
hFE
10
2
10
3
(1)
(2)
(3)
Fig.2 DC current gain; typical values.
V
CE
=
-
5 V.
(1) T
amb
= 150
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
=
-
55
°
C.
handbook, halfpage
-
0
-
1200
-
1000
-
400
-
200
-
800
-
600
MHB976
-
10
-
2
-
10
-
1
-
1
-
10
VBE
(mV)
IC (mA)
-
10
2
-
10
3
(1)
(2)
(3)
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
V
CE
=
-
5 V.
(1) T
amb
=
-
55
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
= 150
°
C.
handbook, halfpage
-
10
4
-
10
3
-
10
2
-
10
MHB977
-
10
-
1
-
1
-
10
VCEsat
(mV)
IC (mA)
-
10
2
-
10
3
(1)
(2)
(3)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= 150
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
=
-
55
°
C.
handbook, halfpage
0
-
1200
-
1000
-
400
-
200
-
800
-
600
MHB978
-
10
-
1
-
1
-
10
VBEsat
(mV)
IC (mA)
-
10
2
-
10
3
(1)
(2)
(3)
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
20.
(1) T
amb
=
-
55
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
= 150
°
C.
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