DATA SHEET
Product specification
Supersedes data of 1997 Apr 17
1999 Apr 12
DISCRETE SEMICONDUCTORS
BC856; BC857
PNP general purpose transistors
book, halfpage
M3D088
1999 Apr 12
2
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856; BC857
FEATURES
·
Low current (max. 100 mA)
·
Low voltage (max. 65 V).
APPLICATIONS
·
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC846 and BC847.
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE
NUMBER
MARKING
CODE
(1)
TYPE
NUMBER
MARKING
CODE
(1)
BC856
3D
BC857A
3E
BC856A
3A
BC857B
3F
BC856B
3B
BC857C
3G
BC857
3H
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM256
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BC856
-
-
80
V
BC857
-
-
50
V
V
CEO
collector-emitter voltage
open base
BC856
-
-
65
V
BC857
-
-
45
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
100
mA
I
CM
peak collector current
-
-
200
mA
I
BM
peak base current
-
-
200
mA
P
tot
total power dissipation
T
amb
25
°
C; note 1
-
250
mW
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
150
°
C
T
amb
operating ambient temperature
-
65
+150
°
C
1999 Apr 12
3
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856; BC857
THERMAL CHARACTERISTICS
Note
1. Mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1. V
BEsat
decreases by about
-
1.7 m K/V with increasing temperature.
2. V
BE
decreases by about
-
2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
-
30 V
-
-
1
-
15
nA
I
E
= 0; V
CB
=
-
30 V; T
j
= 150
°
C
-
-
-
4
µ
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
5 V
-
-
100
nA
h
FE
DC current gain
I
C
=
-
2 mA; V
CE
=
-
5 V;
see Figs 2, 3 and 4
BC856
125
-
475
BC857
125
-
800
BC856A; BC857A
125
-
250
BC856B; BC857B
220
-
475
BC857C
420
-
800
V
CEsat
collector-emitter saturation
voltage
I
C
=
-
10 mA; I
B
=
-
0.5 mA
-
-
75
-
300
mV
I
C
=
-
100 mA; I
B
=
-
5 mA
-
-
250
-
650
mV
V
BEsat
base-emitter saturation voltage
I
C
=
-
10 mA; I
B
=
-
0.5 mA; note 1
-
-
700
-
mV
I
C
=
-
100 mA; I
B
=
-
5 mA; note 1
-
-
850
-
mV
V
BE
base-emitter voltage
I
C
=
-
2 mA; V
CE
=
-
5 V; note 2
-
600
-
650
-
750
mV
I
C
=
-
10 mA; V
CE
=
-
5 V; note 2
-
-
-
820
mV
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
=
-
10 V; f = 1 MHz
-
4.5
-
pF
f
T
transition frequency
I
C
=
-
10 mA; V
CE
=
-
5 V;
f = 100 MHz
100
-
-
MHz
F
noise figure
I
C
=
-
200
µ
A; V
CE
=
-
5 V;
R
S
= 2 k
; f = 1 kHz; B = 200 Hz
-
2
10
dB
1999 Apr 12
4
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856; BC857
Fig.2 DC current gain; typical values.
BC856A; BC857A.
handbook, full pagewidth
0
300
100
200
MBH726
-
10
-
1
hFE
-
1
IC (mA)
-
10
-
10
3
-
10
2
VCE =
-
5 V
Fig.3 DC current gain; typical values.
BC856B; BC857B.
handbook, full pagewidth
0
300
200
100
400
MBH727
-
10
-
2
-
10
-
1
hFE
-
1
IC (mA)
-
10
-
10
3
-
10
2
VCE =
-
5 V
1999 Apr 12
5
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856; BC857
Fig.4 DC current gain; typical values.
BC857C.
handbook, full pagewidth
0
300
200
100
600
500
400
MBH728
-
10
-
2
-
10
-
1
hFE
-
1
IC (mA)
-
10
-
10
3
-
10
2
VCE =
-
5 V
PDF 
ZIP