DATA SHEET
Product specification
Supersedes data of 1997 Apr 07
1999 Apr 12
DISCRETE SEMICONDUCTORS
BC856W; BC857W
PNP general purpose transistors
handbook, halfpage
M3D187
1999 Apr 12
2
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856W; BC857W
FEATURES
·
Low current (max. 100 mA)
·
Low voltage (max. 80)
·
S-mini package.
APPLICATIONS
·
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a plastic SOT323 package.
NPN complements: BC846W and BC847W.
MARKING
Note
1.
= - : Made in Hong Kong.
= t : Made in Malaysia.
TYPE
NUMBER
MARKING
CODE
(1)
TYPE
NUMBER
MARKING
CODE
(1)
BC856W
3D
BC857AW
3E
BC856AW
3A
BC857BW
3F
BC856BW
3B
BC857CW
3G
BC857W
3H
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT323) and symbol.
handbook, halfpage
MAM048
Top view
2
1
3
2
3
1
1999 Apr 12
3
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856W; BC857W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BC856W
-
-
80
V
BC857W
-
-
50
V
V
CEO
collector-emitter voltage
open base
BC856W
-
-
65
V
BC857W
-
-
45
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
100
mA
I
CM
peak collector current
-
-
200
mA
I
BM
peak base current
-
-
200
mA
P
tot
total power dissipation
T
amb
25
°
C; note 1
-
200
mW
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
150
°
C
T
amb
operating ambient temperature
-
65
+150
°
C
1999 Apr 12
4
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856W; BC857W
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1. Pulse test: t
p
300
µ
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
625
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
-
30 V
-
-
15
nA
I
E
= 0; V
CB
=
-
30 V; T
j
= 150
°
C
-
-
4
µ
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
5 V
-
-
100
nA
h
FE
DC current gain
I
C
=
-
2 mA; V
CE
=
-
5 V;
see Figs 2, 3 and 4
BC856W
125
475
BC857W
125
800
BC856AW; BC857AW
125
250
BC856BW; BC857BW
220
475
BC857CW
420
800
V
CEsat
collector-emitter saturation voltage
I
C
=
-
10 mA; I
B
=
-
0.5 mA
-
-
300
mV
I
C
=
-
100 mA; I
B
=
-
5 mA; note 1
-
-
650
mV
V
BEsat
base-emitter saturation voltage
I
C
=
-
100 mA; I
B
=
-
5 mA; note 1
-
-
950
mV
V
BE
base-emitter voltage
I
C
=
-
2 mA; V
CE
=
-
5 V
-
600
-
750
mV
I
C
=
-
10 mA; V
CE
=
-
5 V
-
-
820
mV
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
=
-
10 V; f = 1 MHz
-
5
pF
C
e
emitter capacitance
I
C
= i
c
=0; V
EB
=
-
0.5 V; f = 1 MHz
-
12
pF
f
T
transition frequency
I
C
=
-
10 mA; V
CE
=
-
5 V; f = 100 MHz
100
-
MHz
F
noise figure
I
C
=
-
200
µ
A; V
CE
=
-
5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
-
10
dB
1999 Apr 12
5
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856W; BC857W
Fig.2 DC current gain; typical values.
BC856AW; BC857AW.
handbook, full pagewidth
0
300
100
200
MBH726
-
10
-
1
hFE
-
1
IC (mA)
-
10
-
10
3
-
10
2
VCE =
-
5 V
Fig.3 DC current gain; typical values.
BC856BW; BC857BW.
handbook, full pagewidth
0
300
200
100
400
MBH727
-
10
-
2
-
10
-
1
hFE
-
1
IC (mA)
-
10
-
10
3
-
10
2
VCE =
-
5 V
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