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Part Number BC856AF

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DATA SHEET
Preliminary specification
Supersedes data of 1998 Nov 10
1999 May 21
DISCRETE SEMICONDUCTORS
BC856F; BC857F; BC858F series
PNP general purpose transistors
M3D425
1999 May 21
2
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
BC856F; BC857F; BC858F series
FEATURES
·
Power dissipation comparable to SOT23
·
Low current (max. 100 mA)
·
Low voltage (max. 65 V).
APPLICATIONS
·
General purpose switching and amplification especially
in portable equipment.
DESCRIPTION
PNP transistor encapsulated in an ultra small SC-89
(SOT490) plastic SMD package.
NPN complements: BC846F, BC847F and BC848F series.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1
Simplified outline (SC-89; SOT490) and
symbol.
handbook, halfpage
MAM411
1
2
3
1
2
Top view
3
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BC856AF
3A
BC857CF
3G
BC856BF
3B
BC858AF
3J
BC857AF
3E
BC858BF
3K
BC857BF
3F
BC858CF
3L
1999 May 21
3
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
BC856F; BC857F; BC858F series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BC856AF; BC856BF
-
-
80
V
BC857AF; BC857BF; BC857CF
-
-
50
V
BC858AF; BC858BF; BC858CF
-
-
30
V
V
CEO
collector-emitter voltage
open base
BC856AF; BC856BF
-
-
65
BC857AF; BC857BF; BC857CF
-
-
45
BC858AF; BC858BF; BC858CF
-
-
30
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
100
mA
I
CM
peak collector current
-
-
200
mA
I
BM
peak base current
-
-
100
mA
P
tot
total power dissipation
T
amb
25
°
C; note 1
-
250
mW
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
150
°
C
T
amb
operating ambient temperature
-
65
+150
°
C
1999 May 21
4
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
BC856F; BC857F; BC858F series
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1. Pulse test: t
p
300
µ
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air; note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
-
30 V
-
-
15
nA
I
E
= 0; V
CB
=
-
30 V; T
j
= 150
°
C
-
-
5
µ
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
5 V
-
-
100
nA
h
FE
DC current gain
I
C
=
-
2 mA; V
CE
=
-
5 V
BC856AF; BC857AF; BC858AF
125
250
BC856BF; BC857BF; BC858BF
220
475
BC857CF; BC858CF
420
800
V
CEsat
collector-emitter saturation voltage
I
C
=
-
10 mA; I
B
=
-
0.5 mA
-
-
200
mV
I
C
=
-
100 mA; I
B
=
-
5 mA; note 1
-
-
400
mV
V
BE
base-emitter voltage
I
C
=
-
2 mA; V
CE
=
-
5 V
-
600
-
750
mV
I
C
=
-
10 mA; V
CE
=
-
5 V
-
-
820
mV
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
=
-
10 V; f = 1 MHz
-
2.5
pF
f
T
transition frequency
I
C
=
-
10 mA; V
CE
=
-
5 V; f = 100 MHz
100
-
MHz
F
noise figure
I
C
=
-
200
µ
A; V
CE
=
-
5 V; R
S
= 2 k
;
f = 1 kHz; B = 220 Hz
-
10
dB
1999 May 21
5
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
BC856F; BC857F; BC858F series
PACKAGE OUTLINE
UNIT
b
p
c
D
E
e
1
H
E
L
p
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
98-10-23
IEC
JEDEC
EIAJ
mm
0.33
0.23
0.2
0.1
1.7
1.5
0.95
0.75
0.5
e
1.0
1.7
1.5
0.1
0.1
DIMENSIONS (mm are the original dimensions)
0.5
0.3
SOT490
SC-89
bp
D
e1
e
A
Lp
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
0.8
0.6
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT490