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Part Number BC848

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DATA SHEET
Product specification
Supersedes data of 2002 Feb 04
2004 Feb 06
DISCRETE SEMICONDUCTORS
BC846; BC847; BC848
NPN general purpose transistors
2004 Feb 06
2
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846; BC847; BC848
FEATURES
·
Low current (max. 100 mA)
·
Low voltage (max. 65 V).
APPLICATIONS
·
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BC856, BC857 and BC858.
MARKING
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
PINNING
TYPE NUMBER
MARKING CODE
(1)
BC846
1D*
BC846A
1A*
BC846B
1B*
BC847
1H*
BC847A
1E*
BC847B
1F*
BC847C
1G*
BC848B
1K*
PIN
DESCRIPTION
1
base
2
emitter
3
collector
handbook, halfpage
2
1
3
MAM255
Top view
2
3
1
Fig.1
Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BC846
-
plastic surface mounted package; 3 leads
SOT23
BC846A
BC846B
BC847
BC847A
BC847B
BC847C
BC848B
2004 Feb 06
3
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846; BC847; BC848
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BC846
-
80
V
BC847
-
50
V
BC848
-
30
V
V
CEO
collector-emitter voltage
open base
BC846
-
65
V
BC847
-
45
V
BC848
-
30
V
V
EBO
emitter-base voltage
open collector
BC846; BC847
-
6
V
BC848
-
5
V
I
C
collector current (DC)
-
100
mA
I
CM
peak collector current
-
200
mA
I
BM
peak base current
-
200
mA
P
tot
total power dissipation
T
amb
25
°
C; note 1
-
250
mW
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
150
°
C
T
amb
operating ambient temperature
-
65
+150
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to
ambient
in free air; note 1
500
K/W
2004 Feb 06
4
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846; BC847; BC848
CHARACTERISTICS
T
amb
= 25
°
C; unless otherwise specified.
Note
1. Pulse test: t
p
300
µ
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector-base cut-off current
V
CB
= 30 V; I
E
= 0
-
-
15
nA
V
CB
= 30 V; I
E
= 0;
T
j
= 150
°
C
-
-
5
µ
A
I
EBO
emitter-base cut-off current
V
EB
= 5 V; I
C
= 0
-
-
100
nA
h
FE
DC current gain
I
C
= 10
µ
A; V
CE
= 5 V
BC846A; BC847A
-
90
-
BC846B; BC847B; BC848B
-
150
-
BC847C
-
270
-
DC current gain
I
C
= 2 mA; V
CE
= 5 V
BC846
110
-
450
BC847
110
-
800
BC846A; BC847A
110
180
220
BC846B; BC847B; BC848B
200
290
450
BC847C
420
520
800
V
CEsat
collector-emitter saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA
-
90
250
mV
I
C
= 100 mA; I
B
= 5 mA;
note 1
-
200
600
mV
V
BEsat
base-emitter saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA
-
700
-
mV
I
C
= 100 mA; I
B
= 5 mA;
note 1
-
900
-
mV
V
BE
base-emitter voltage
I
C
= 2 mA; V
CE
= 5 V
580
660
700
mV
I
C
= 10 mA; V
CE
= 5 V
-
-
770
mV
C
c
collector capacitance
V
CB
= 10 V; I
E
= I
e
= 0;
f = 1 MHz
-
2.5
-
pF
f
T
transition frequency
V
CE
= 5 V; I
C
= 10 mA;
f = 100 MHz
100
-
-
MHz
F
noise figure
I
C
= 200
µ
A; V
CE
= 5 V;
R
S
= 2 k
; f = 1 kHz;
B = 200 Hz
-
2
10
dB
2004 Feb 06
5
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846; BC847; BC848
handbook, halfpage
MGT723
10
-
1
1
10
10
2
10
3
IC (mA)
0
400
300
200
100
hFE
(1)
(2)
(3)
Fig.2
DC current gain as a function of collector
current; typical values.
BC846A; V
CE
= 5 V.
(1) T
amb
= 150
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
=
-
55
°
C.
handbook, halfpage
MGT724
10
-
1
1
10
10
2
10
3
IC (mA)
0
1200
1000
800
600
400
200
VBE
(mV)
(1)
(2)
(3)
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
BC846A; V
CE
= 5 V.
(1) T
amb
=
-
55
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
= 150
°
C.
handbook, halfpage
10
3
10
2
10
MGT725
10
-
1
1
10
10
2
10
3
IC (mA)
VCEsat
(mV)
(1)
(2)
(3)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
BC846A; I
C
/I
B
= 20.
(1) T
amb
= 150
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
=
-
55
°
C.
handbook, halfpage
MGT726
10
-
1
1
10
10
2
10
3
IC (mA)
0
1200
1000
800
600
400
200
VBEsat
(mV)
(1)
(2)
(3)
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
BC846A; I
C
/I
B
= 10.
(1) T
amb
=
-
55
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
= 150
°
C.