DATA SHEET
Product specification
Supersedes data of 1997 Mar 27
1999 Apr 23
DISCRETE SEMICONDUCTORS
BC846W; BC847W
NPN general purpose transistors
book, halfpage
M3D102
1999 Apr 23
2
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846W; BC847W
FEATURES
·
Low current (max. 100 mA)
·
Low voltage (max. 65 V).
APPLICATIONS
·
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SC70; SOT323 plastic package.
PNP complements: BC856W and BC857W.
MARKING
Note
1.
= - : Made in Hong Kong.
= t : Made in Malaysia.
TYPE
NUMBER
MARKING
CODE
(1)
TYPE
NUMBER
MARKING
CODE
(1)
BC846W
1D
BC847AW
1E
BC846AW
1A
BC847BW
1F
BC846BW
1B
BC847CW
1G
BC847W
1H
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
handbook, halfpage
2
3
1
MAM062
3
2
1
Top view
Fig.1
Simplified outline (SC70; SOT323)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BC846W
-
80
V
BC847W
-
50
V
V
CEO
collector-emitter voltage
open base
BC846W
-
65
V
BC847W
-
45
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
-
100
mA
I
CM
peak collector current
-
200
mA
I
BM
peak base current
-
200
mA
P
tot
total power dissipation
T
amb
25
°
C; note 1
-
200
mW
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
150
°
C
T
amb
operating ambient temperature
-
65
+150
°
C
1999 Apr 23
3
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846W; BC847W
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1. Pulse test: t
p
300
µ
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
625
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 30 V
-
-
15
nA
I
E
= 0; V
CB
= 30 V; T
j
= 150
°
C
-
-
5
µ
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 5 V
-
-
100
nA
h
FE
DC current gain
I
C
= 2 mA; V
CE
= 5 V;
see Figs 2, 3 and 4
BC846W
110
-
450
BC847W
110
-
800
BC846AW; BC847AW
110
-
220
BC846BW; BC847BW
200
-
450
BC847CW
420
-
800
V
CEsat
collector-emitter saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA
-
-
250
mV
I
C
= 100 mA; I
B
= 5 mA; note 1
-
-
600
mV
V
BEsat
base-emitter saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA
-
700
-
mV
I
C
= 100 mA; I
B
= 5 mA
-
900
-
mV
V
BE
base-emitter voltage
I
C
= 2 mA; V
CE
= 5 V
580
-
700
mV
I
C
= 10 mA; V
CE
= 5 V
-
-
770
mV
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
-
-
3
pF
f
T
transition frequency
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz 100
-
-
MHz
F
noise figure
I
C
= 200
µ
A; V
CE
= 5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
-
-
10
dB
1999 Apr 23
4
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846W; BC847W
Fig.2 DC current gain; typical values.
BC846AW; BC847AW.
handbook, full pagewidth
0
250
50
100
150
200
MBH723
10
-
2
10
-
1
hFE
1
IC (mA)
10
10
3
10
2
VCE = 5 V
Fig.3 DC current gain; typical values.
BC846BW; BC847BW.
handbook, full pagewidth
0
300
100
200
MBH724
10
-
2
10
-
1
hFE
1
IC (mA)
10
10
3
10
2
VCE = 5 V
1999 Apr 23
5
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846W; BC847W
Fig.4 DC current gain; typical values.
BC847CW.
handbook, full pagewidth
0
600
200
400
MBH725
10
-
2
10
-
1
hFE
1
IC (mA)
10
10
3
10
2
VCE = 5 V
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