Genesys
BC 846 ... BC 850
1
Nov-11-1999
NPN Silicon AF Transistors
· For AF input stages and driver applications
· High current gain
· Low collector-emitter saturation voltage
· Low noise between 30 Hz and 15 kHz
· Complementary types: BC 856, BC 857, BC 858
BC 859, BC 860 (PNP)
1
2
3
VPS05161
Type
Marking
Pin Configuration
Package
BC 846A
BC 846B
BC 847A
BC 847B
BC 847C
BC 848A
BC 848B
BC 848C
BC 849B
BC 849C
BC 850B
BC 850C
1As
1Bs
1Es
1Fs
1Gs
1Js
1Ks
1Ls
2Bs
2Cs
2Fs
2Gs
1 = B
B = 1
B = 1
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
BC 846 ... BC 850
2
Nov-11-1999
Maximum Ratings
Parameter
Symbol
BC 846
BC 847
BC 850
BC 848
BC 849
Unit
Collector-emitter voltage
V
CEO
65
45
30
V
Collector-base voltage
V
CBO
80
50
30
Collector-emitter voltage
V
CES
80
50
30
Emitter-base voltage
V
EBO
6
6
5
DC collector current
I
C
100
mA
Peak collector current
I
CM
200
mA
Peak base current
I
BM
200
Peak emitter current
200
I
EM
Total power dissipation
, T
S
= 71 °C
P
tot
330
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction ambient
1)
R
thJA
310
K/W
Junction - soldering point
R
thJS
240
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0
BC 846
BC 847/850
BC 848/849
V
(BR)CEO
65
45
30
V
-
-
-
-
-
-
80
50
30
-
-
-
BC 846
BC 847/850
BC 848/849
V
(BR)CBO
Collector-base breakdown voltage
I
C
= 10 µA, I
B
= 0
-
-
-
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
BC 846 ... BC 850
3
Nov-11-1999
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
max.
typ.
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 µA, V
BE
= 0
BC 846
BC 847/850
BC 848/849
80
50
30
-
-
-
V
-
-
-
V
(BR)CES
6
5
Emitter-base breakdown voltage
I
E
= 1 µA, I
C
= 0
V
(BR)EBO
BC 846/847
BC 848-850
-
-
-
-
nA
I
CBO
-
-
15
Collector cutoff current
V
CB
= 40 V, I
E
= 0
5
-
-
I
CBO
Collector cutoff current
V
CB
= 30 V, I
E
= 0 , T
A
= 150 °C
µA
DC current gain 1)
I
C
= 10 µA, V
CE
= 5 V
-
-
-
-
-
-
-
140
250
480
h
FE
-group A
h
FE
-group B
h
FE
-group C
h
FE
110
200
420
h
FE
h
FE
-group A
h
FE
-group B
h
FE
-group C
DC current gain 1)
I
C
= 2 mA, V
CE
= 5 V
180
290
520
220
450
800
V
CEsat
Collector-emitter saturation voltage1)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
-
-
90
200
250
600
mV
Base-emitter saturation voltage 1)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
V
BEsat
-
-
700
900
-
-
Base-emitter voltage 1)
I
C
= 2 mA, V
CE
= 5 V
I
C
= 10 mA, V
CE
= 5 V
V
BE(ON)
580
-
660
-
700
770
1) Pulse test: t
300
µ
s, D = 2%
BC 846 ... BC 850
4
Nov-11-1999
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter
Values
Unit
Symbol
min.
max.
typ.
AC Characteristics
f
T
-
MHz
-
Transition frequency
I
C
= 10 mA, V
CE
= 5 V, f = 100 MHz
250
-
pF
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
3
-
8
-
C
eb
-
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
Short-circuit input impedance
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz
k
-
-
-
2.7
4.5
8.7
-
-
-
h
FE
-gr.A
h
FE
-gr.B
h
FE
-gr.C
h
11e
10
-4
Open-circuit reverse voltage transf.ratio
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz
h
FE
-gr.A
h
FE
-gr.B
h
FE
-gr.C
1.5
2
3
-
-
-
-
-
-
h
12e
Short-circuit forward current transf.ratio
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz
h
FE
-gr.A
h
FE
-gr.B
h
FE
-gr.C
h
21e
-
-
-
200
330
600
-
-
-
-
Open-circuit output admittance
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz
h
FE
-gr.A
h
FE
-gr.B
h
FE
-gr.C
h
22e
-
-
-
18
30
60
-
-
-
µS
Noise figure
I
C
= 100 µA, V
CE
= 5 V, R
S
= 1 k
,
f
= 1 kHz,
f = 200 Hz
4
1.2
-
F
dB
BC 849
BC 850
0.135 µV
Equivalent noise voltage
I
C
= 200 µA, V
CE
= 5 V, R
S
= 2 k
,
f = 10 ... 50 Hz
BC 850
V
n
-
-
BC 846 ... BC 850
5
Nov-11-1999
Total power dissipation
P
tot
= f (T
A
*;T
S
)
* Package mounted on epoxy
0
0
EHP00360
150
50
100
°C
T
A
S
T
100
200
300
mW
400
P
tot
T T
;
A
S
Collector-base capacitance C
CB
= f (V
CBO
)
Emitter-base capacitance
C
EB
= f (V
EBO
)
0
4
10
5
10
10
EHP00361
V
CB0
C
EB0
V
6
2
EB0
V
EB
C
8
10
pF
12
CB0
C
-1
0
1
C
CB
(
(
)
BC 846...850
)
Permissible pulse load
P
totmax
/ P
totDC
= f (t
p
)
10
EHP00362
-6
0
10
5
D =
5
10
1
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
D
T
t
p
T
tot max
tot
P
DC
P
p
t
Transition frequency
f
T
= f (I
C
)
V
CE
= 5V
10
10
10
10
EHP00363
f
mA
MHz
-1
0
1
2
5
T
3
10
10
2
1
10
5
5
5
C
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