1999 May 18
2
Philips Semiconductors
Product specification
PNP general purpose transistor
BC807W
FEATURES
·
High current (max. 500 mA)
·
Low voltage (max. 45 V).
APPLICATIONS
·
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complement: BC817W.
MARKING
Note
1.
= - : Made in Hong Kong.
= t : Made in Malaysia.
TYPE
NUMBER
MARKING
CODE
(1)
TYPE
NUMBER
MARKING
CODE
(1)
BC807W
5D
BC807-25W
5B
BC807-16W
5A
BC807-40W
5C
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT323) and symbol.
handbook, halfpage
MAM048
Top view
2
1
3
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
50
V
V
CEO
collector-emitter voltage
open base; I
C
=
-
10 mA
-
-
45
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
500
mA
I
CM
peak collector current
-
-
1
A
I
BM
peak base current
-
-
200
mA
P
tot
total power dissipation
T
amb
25
°
C; note 1
-
200
mW
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
150
°
C
T
amb
operating ambient temperature
-
65
+150
°
C
1999 May 18
3
Philips Semiconductors
Product specification
PNP general purpose transistor
BC807W
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1. Pulse test: t
p
300
µ
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
625
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
-
20 V
-
-
100
nA
I
E
= 0; V
CB
=
-
20 V; T
j
= 150
°
C
-
-
5
µ
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
5 V
-
-
100
nA
h
FE
DC current gain
I
C
=
-
100 mA; V
CE
=
-
1 V; note 1;
see Figs 2, 3 and 4
BC807W
100
600
BC807-16W
100
250
BC807-25W
160
400
BC807-40W
250
600
DC current gain
I
C
=
-
500 mA; V
CE
=
-
1 V; note 1
40
-
V
CEsat
collector-emitter saturation
voltage
I
C
=
-
500 mA; I
B
=
-
50 mA; note 1
-
-
700
mV
V
BE
base-emitter voltage
I
C
=
-
500 mA; V
CE
=
-
1 V; note 1
-
-
1.2
V
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
=
-
10 V; f = 1 MHz
-
10
pF
f
T
transition frequency
I
C
=
-
10 mA; V
CE
=
-
5 V; f = 100 MHz
80
-
MHz
1999 May 18
5
Philips Semiconductors
Product specification
PNP general purpose transistor
BC807W
Fig.3 DC current gain; typical values.
handbook, full pagewidth
0
500
100
200
300
400
MBH718
-
10
-
1
-
1
hFE
-
10
IC (mA)
-
10
2
-
10
3
VCE =
-
1 V
BC807-25W.
Fig.4 DC current gain; typical values.
handbook, full pagewidth
0
500
100
200
300
400
MBH719
-
10
-
1
-
1
hFE
-
10
IC (mA)
-
10
2
-
10
3
VCE =
-
1 V
BC807-40W.
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