1.
Product profile
1.1 General description
Two planar Schottky barrier double diodes with common cathodes and an integrated
guard ring for stress protection encapsulated in a SOT666 ultra small SMD plastic
package.
1.2 Features
s
Low forward voltage
s
Low capacitance
s
Ultra small SMD plastic package
s
Flat leads: excellent coplanarity and improved thermal behavior.
1.3 Applications
s
Ultra high-speed switching
s
Voltage clamping
s
Line termination
s
Inverse-polarity protection.
1.4 Quick reference data
BAT54CV
Two Schottky barrier double diodes in ultra small SOT666
package
Rev. 01 -- 22 September 2004
Objective data sheet
Table 1:
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
R
continuous reverse voltage
-
-
30
V
I
F
continuous forward current
-
-
200
mA
9397 750 13837
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 -- 22 September 2004
2 of 9
Philips Semiconductors
BAT54CV
Two Schottky barrier double diodes in ultra small SOT666 package
2.
Pinning information
3.
Ordering information
4.
Marking
5.
Limiting values
Table 2:
Pinning
Pin
Description
Simplified outline
Symbol
1
anode (diode 1)
2
anode (diode 2)
3
common cathode (diode 3, 4)
4
anode (diode 3)
5
anode (diode 4)
6
common cathode (diode 1, 2)
SOT666
1
2
3
4
5
6
1
5
6
2
3
4
sym057
Table 3:
Ordering information
Type number
Package
Name
Description
Version
BAT54CV
-
plastic surface mounted package; 6 leads
SOT666
Table 4:
Marking codes
Type number
Marking code
BAT54CV
C5
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
V
R
continuous reverse voltage
-
30
V
I
F
continuous forward current
-
200
mA
I
FRM
repetitive peak forward
current
t
p
10 ms;
0.5
-
0.85
A
I
FSM
non-repetitive peak forward
current
t
p
= 8.3 ms
-
2
A
T
j
junction temperature
-
125
°
C
T
amb
ambient temperature
-
65
+125
°
C
T
stg
storage temperature
-
65
+150
°
C
9397 750 13837
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 -- 22 September 2004
3 of 9
Philips Semiconductors
BAT54CV
Two Schottky barrier double diodes in ultra small SOT666 package
[1]
Refer to SOT666 standard mounting conditions.
6.
Thermal characteristics
[1]
Refer to SOT666 standard mounting conditions.
[2]
Reflow soldering is the only recommended soldering method.
7.
Characteristics
[1]
Pulse test: t
p
300
µ
s;
0.02.
Per device
P
tot
total power dissipation
T
amb
25
°
C
[1]
-
440
mW
Table 5:
Limiting values
...continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Table 6:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1] [2]
-
-
225
K/W
Table 7:
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
V
F
forward voltage
see
Figure 1
;
[1]
I
F
= 0.1 mA
-
-
240
mV
I
F
= 1 mA
-
-
320
mV
I
F
= 10 mA
-
-
400
mV
I
F
= 30 mA
-
-
500
mV
I
F
= 100 mA
-
-
800
mV
I
R
reverse current
V
R
= 25 V; see
Figure 2
-
-
2
µ
A
C
d
diode capacitance
V
R
= 1 V; f = 1 MHz;
see
Figure 3
-
-
10
pF
9397 750 13837
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 -- 22 September 2004
4 of 9
Philips Semiconductors
BAT54CV
Two Schottky barrier double diodes in ultra small SOT666 package
(1) T
amb
= 125
°
C.
(2) T
amb
= 85
°
C.
(3) T
amb
= 25
°
C.
(1) T
amb
= 125
°
C.
(2) T
amb
= 85
°
C.
(3) T
amb
= 25
°
C.
Fig 1.
Forward current as a function of forward
voltage; typical values.
Fig 2.
Reverse current as a function of reverse
voltage; typical values.
T
amb
= 25
°
C; f = 1 MHz.
Fig 3.
Diode capacitance as a function of reverse voltage; typical values.
10
3
10
2
10
-
1
I
F
(mA)
V
F
(V)
10
1
1.2
0.8
0.4
0
msa892
(3)
(2)
(1)
(3)
(2)
(1)
0
10
20
30
V
R
(V)
10
3
10
2
10
-
1
I
R
(
µ
A)
10
1
(1)
(2)
(3)
msa893
0
10
20
30
0
5
10
15
V
R
(V)
C
d
(pF)
msa891
9397 750 13837
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 -- 22 September 2004
5 of 9
Philips Semiconductors
BAT54CV
Two Schottky barrier double diodes in ultra small SOT666 package
8.
Package outline
Fig 4.
Package outline SOT666.
UNIT
b
p
c
D
E
e
1
H
E
L
p
w
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
01-01-04
01-08-27
IEC
JEDEC
EIAJ
mm
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
0.5
e
1.0
1.7
1.5
0.1
y
0.1
DIMENSIONS (mm are the original dimensions)
0.3
0.1
SOT666
bp
pin 1 index
D
e1
e
A
Lp
detail X
HE
E
A
S
0
1
2 mm
scale
A
0.6
0.5
c
X
1
2
3
4
5
6
Plastic surface mounted package; 6 leads
SOT666
Y S
w
M
A
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